<![CDATA[ABSTRAKPengendalian komponen elektronika daya diperlukannya driver pada gate sehingga diperlukannya perancangan gate driver bertujuan untuk memperkuat sinyal transmisi yang berasal dari control stage untuk memastikan switching yang sesuai dari power device, dalam perancangan harus memperhatikan rugi-rugi switching, semakin kecil rugi-rugi switching maka perancangan gate driver semakin baik. Dalam penelitian ini digunakan model perancangan gate driver menggunakan analisis beban resistif dan beban induktif dengan rangkaian simulasi pabrik ROHM yang tertera dalam datasheet SiC MOSFET tipe sct2160ke yang disimulasikan menggunakan software TINA-TI. Dalam skripsi ini akan ditampilan hasil simulasi dan analisisnya terhadap delay time on, delay time off, disipasi daya, dan switching energy measurement.Kata kunci : SiC MOSFET, gate driver, switching, TINA-TIABSTRACTControlling of power electronic components require a driver at the gate thus the need for gate driver design which aims to amplify the transmission signal originating from the control stage to ensure proper switching of the power device. In the design, it is crucial to observe switching losses. The smaller the switching losses, the better the gate driver design. This study was conducted using the gate driver design model with inductive and resistive load analysis with the ROHM factory simulation circuit listed in the SiC MOSFET type sct2160ke datasheet which was simulated using the TINA-TI software. In this thesis, the results of the simulation and analysis will be presented on the delay time on, delay time off, power dissipation, and switching energy measurement.Keywords : SiC MOSFET, gate driver, switching, TINA-TI]]>
