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All Journal International Journal of Power Electronics and Drive Systems (IJPEDS)
A.M. Abd El-Maksood
Nuclear Materials Authority
Control & Systems Engineering Electrical & Electronics Engineering

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Modeling the Dependence of Power Diode on Temperature and Radiation S.M. El-Ghanam; A.M. Abd El-Maksood; F.A.S. Soliman
International Journal of Power Electronics and Drive Systems (IJPEDS) Vol 6, No 2: June 2015
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (272.687 KB) | DOI: 10.11591/ijpeds.v6.i2.pp216-224

Abstract

A theoretical study had been carried out on the effect of radiation on the electrical properties of silicon power diodes. Computer program "PDRAD2013" was developed to solve the diode equations and to introduce the operating conditions and radiation effects upon its parameters. Temperature increase interrupts the electrical properties of the diode in the direction of drop voltage decrease across the p-n junction.. The model was analyzed under the influence of different radiation type (gamma-rays, neutrons, protons and electrons) with various dose levels and energies. The carriers diffusion length were seriously affected leading to a large increase in the forward voltage. These effects were found to be function of radiation type, fluence and energy.
Co-Authors F.A.S. Soliman S.M. El-Ghanam