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All Journal Perfecting a Video Game with Game Metrics Indonesian Journal of Electrical Engineering and Informatics (IJEEI)

Zaharah Johari

Universiti Teknologi Malaysia

Author-ID : 2457722

Computer Science & IT Electrical & Electronics Engineering

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Circular polarization folded reflectarray antenna for 5G applications Mohd Fairus Mohd Yusoff; Lim Jit Min; Mohamad Rijal Hamid; Zaharah Johari; Muhammad Naeem Iqbal
TELKOMNIKA (Telecommunication Computing Electronics and Control) Vol 17, No 5: October 2019
Publisher : Universitas Ahmad Dahlan

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.12928/telkomnika.v17i5.12812

Fifth-generation (5G) is a wireless connection built specifically to keep up with the rapid increase of devices that need a mobile internet connection. A system working on 5G band can provide higher bandwidth and faster data rate as compared to fourth-generation (4G) band. Thus, an antenna with higher gain and lower profile is required to support this system. On the other hand, the performance of circular polarization antenna is better than linear polarization antenna due to its ability to accept wave from different direction. In this project, a low profile circular polarization folded reflectarray antenna with operating frequency of 28 GHz is presented. This project is divided into two parts. In the first part, a linear polarization folded reflectarray antenna is designed. In this second part, a meander lines polarizer is used to convert the linear polarization antenna to circular polarization antenna. The antenna is fed by a linear polarized waveguide. Each radiating element of the antenna is in rectangular shape. The size of the radiating elements are selected according to obtain required phase delay to form a planar phase front in the far-field distance. Both of the antennas are simulated by using Computer Simulation Technology (CST) software. Finally, the results shows excellent performances with 16.81dB directivity and 1.49dB axial ratio at 28GHz. Thus, the antenna is very suitable for 5G applications.

Reliability of graphene as charge storage layer in floating gate flash memory M. Hilman Ahmad; N Ezaila Alias; Afiq Hamzah; Zaharah Johari; M. S. Z. Abidin; Norlina Paraman; M. L. Peng Tan; Razali Ismail
Indonesian Journal of Electrical Engineering and Informatics (IJEEI) Vol 7, No 2: June 2019
Publisher : IAES Indonesian Section

This study aims to investigate the memory performances of graphene as a charge storage layer in the floating gate with difference doping concentration of n-channel and p-channel substrates using Silvaco ATLAS TCAD Tools. The simulation work has been done to determine the performance of flash memory in terms of memory window, P/E characteristics and data retention and have been validated with the experimental work done by other researchers. From the simulation data, the trend of memory window at low P/E voltage is nearly overlapped between simulation and experimental data. The memory window at ±20V P/E voltage for n-channel and p-channel flash memory cell are 15.4V and 15.6V respectively. The data retention for the n-channel flash memory cell is retained by 75% (from 15.4V to 11.6V) whereas for the p-channel flash memory cell is retained by 80% (from 15.6V to 12.5V) after 10 years of extrapolation with -1/1V gate stress which shows that p-channel flash memory cell demonstrates better data retention compared to n-channel flash memory cell.

Multiband hairpin-line bandpass filters by using metamaterial complimentary split ring resonator Mohd Fairus Mohd Yusoff; Muhammad Akram Mohd Sobri; Farid Zubir; Zaharah Johari
Indonesian Journal of Electrical Engineering and Informatics (IJEEI) Vol 7, No 2: June 2019
Publisher : IAES Indonesian Section

Telecommunication systems for the new generation have greatly stimulated the demand for multi-band bandpass ﬁlters with compact dimensions, low insertion loss, robust, low cost and less complex design. In this paper, a compact multi-band bandpass filter, with the fractional bandwidth of 40% and 20% at resonant frequency 3.5 and 5.5 GHz respectively with the response of Chebyshev passband ripple of 0.1 dB is presented. This bandpass filter is suitable for WiMAX application. The design is based on the hairpin-line configuration and metamaterial of complementary split ring resonator structure. The hairpin-line is used for the compact structure design and easy to fabricate because it has open-circuited ends that require no grounding. While the complementary split ring resonator structure is easy to design and can provide multi-band without affecting of size and performance of the filter. The simulated results show the dual-band bandpass response with the insertion loss is 0 dB and high attenuation at stopband. The proposed ﬁlter provides a compact, low insertion loss, and less complex structure design that are promising candidates in order to meet the demands of the new generation of communication systems.

Impact of Device Parameter Variation on the Electrical Characteristic of N-type Junctionless Nanowire Transistor with High-k Dielectrics Mohammed Adamu Sule; Mathangi Ramakrishnan; Nurul Ezaila Alias; Norlina Paraman; Zaharah Johari; Afiq Hamzah; Michael Loong Peng Tan; Usman Ulllah Sheikh
Indonesian Journal of Electrical Engineering and Informatics (IJEEI) Vol 8, No 2: June 2020
Publisher : IAES Indonesian Section

Metallurgical junction and thermal budget are serious constraints in scaling and performance of conventional metal-oxide-semiconductor field-effect transistor (MOSFET). To overcome this problem, junctionless nanowire field-effect transistor (JLNWFET) was introduced. In this paper, we investigate the impact of device parameter variation on the performance of n-type JLNWFET with high-k dielectrics. The electrical characteristic of JLNWFET and the inversion-mode transistor of different gate length (LG) and nanowire diameter (dNW) was compared and analyzed. Different high-k dielectrics were used to get an optimum device structure of JLNWFET. The device was simulated using SDE Tool of Sentaurus TCAD and the I-V characteristics were simulated using Sdevice Tools. Lombardi mobility model and Philips unified mobility model were applied to define its electric field and doping dependent mobility degradation. A thin-film heavily doped silicon nanowire with a gate electrode that controls the flow of current between the source and drain was used. The proposed JLNWFET exhibits high ON-state current (ION) due to the high doping concentration (ND) of 1 x 1019 cm-3 which leads to the improved ON-state to OFF-state current ratio (ION/IOFF) of about 10% than the inversion-mode device for a LG of 7 nm and the silicon dNW of 6 nm. Electrical characteristics such are drain induced barrier lowering (DIBL) and subthreshold slope (SS) were extracted which leads to low leakage current as well as a high ION/IOFF ratio. The performance was improved by introducing silicon dioxide (SiO2) with high-k dielectric materials, hafnium oxide (HfO2) and silicon nitrate (Si3N4). It was found that JLNWFET with HfO2 exhibits better electrical characteristics and performance.

Wideband Frequency Selective Surface Based Transmitarray Antenna at X-Band Muhammad Naeem Iqbal; Mohd Fairus Mohd Yusoff; Mohammad Kamal A Rahim; Mohamad Rijal Hamid; Farid Zubir; Zaharah Johari; Huda Bin A Majid
Indonesian Journal of Electrical Engineering and Informatics (IJEEI) Vol 8, No 3: September 2020
Publisher : IAES Indonesian Section

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.52549/ijeei.v8i3.1270

In this paper, a wideband multilayer transmitarray antenna is designed for Ku frequency band. The unit cell is designed at 12GHz using frequency selective surface structure. Double square ring with center patch based multilayer unit cell is simulated. The effect of substrate thickness variation on transmission coefficient magnitude and phase range is discussed. The horn antenna designed at X-band will be used as feed source for transmitarray antenna. Transmitarray simulation results show wide impedance bandwidth from 10 to 13GHz. Wide gain bandwidth of 1.975GHz with peak gain of 18.96dB is achieved. The proposed transmitarray design will find applications in high gain, directional, low profile antennas for X-band communication systems.

Co-Authors Afiq Hamzah Farid Zubir Huda Bin A Majid Lim Jit Min M. Hilman Ahmad M. L. Peng Tan M. S. Z. Abidin Mathangi Ramakrishnan Michael Loong Peng Tan Mohamad Rijal Hamid Mohammad Kamal A Rahim Mohammed Adamu Sule Mohd Fairus Mohd Yusoff Muhammad Akram Mohd Sobri Muhammad Naeem Iqbal N Ezaila Alias Norlina Paraman Nurul Ezaila Alias Razali Ismail Usman Ulllah Sheikh

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