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A Comparative Study on Optical Characteristics of InGaAsP QW Heterostructures of Type-I and Type-II Band Alignments Garima Bhardwaj; Sandhya K.; Richa Dolia; M. Abu-Samak; Shalendra Kumar; P. A. Alvi
Bulletin of Electrical Engineering and Informatics Vol 7, No 1: March 2018
Publisher : Institute of Advanced Engineering and Science

In this paper, we have configured InGaAsP QW (quantum well) heterostructures of type-I and type-II band alignments and simulated their optical characteristics by solving 6 x 6 Kohn-Luttinger Hamiltonian Matrix. According to the simulation results, the InGaAsP QW heterostructure of type-I band alignment has been found to show peak optical gain (TE mode) of the order of~3600/cm at the transition wavelength~1.40 µm; while of type-II band alignment has achieved the peak gain (TE mode) of the order of~7800/cm at the wavelength of~1.85 µm (eye safe region). Thus, both of the heterostructures can be utilized in designing of opto-or photonic devices for the emission of radiations in NIR (near infrared region) but form the high gain point of view, the InGaAsP of type-II band alignment can be more preferred.

Effects of Variation of Quantum Well Numbers on Gain Characteristics of Type-I InGaAsP/InP Nano-heterostructure S. G. Anjum; Sandhya K.; A. B. Khan; A. M. Khan; M. J. Siddiqui; P. A. Alvi
Bulletin of Electrical Engineering and Informatics Vol 6, No 3: September 2017
Publisher : Institute of Advanced Engineering and Science

This paper reports the effects of variation of number of quantum wells in material gain characteristics and lasing wavelength of step index separately confined type-I InGaAsP/InP lasing nano-heterostructure for different carrier concentrations at room temperature in TE (Transverse Electric) mode of polarization. Peak material gain is found to be highest when the number of quantum well is one in the structure. However, for the case of 3QWs, 5QWs and 7QWs, it is almost same at a particular carrier density. Lasing wavelength at peak material gain considerably increases as the number of quantum well layers vary from single quantum well layer to three quantum well layers in the active region and after that it will remain almost same by any further increase in number of quantum wells for a particular carrier density. Furthermore, negative gain condition in the material gain spectra exists in the case of multiple quantum wells only at carrier concentration of 2×1018/cm3. The results suggest that the proposed nano-heterostructure is highly suitable as a light source in fiber optic links for long distance communication.

Effects of Variation of Quantum Well Numbers on Gain Characteristics of Type-I InGaAsP/InP Nano-heterostructure S. G. Anjum; Sandhya K.; A. B. Khan; A. M. Khan; M. J. Siddiqui; P. A. Alvi
Bulletin of Electrical Engineering and Informatics Vol 6, No 3: September 2017
Publisher : Institute of Advanced Engineering and Science

This paper reports the effects of variation of number of quantum wells in material gain characteristics and lasing wavelength of step index separately confined type-I InGaAsP/InP lasing nano-heterostructure for different carrier concentrations at room temperature in TE (Transverse Electric) mode of polarization. Peak material gain is found to be highest when the number of quantum well is one in the structure. However, for the case of 3QWs, 5QWs and 7QWs, it is almost same at a particular carrier density. Lasing wavelength at peak material gain considerably increases as the number of quantum well layers vary from single quantum well layer to three quantum well layers in the active region and after that it will remain almost same by any further increase in number of quantum wells for a particular carrier density. Furthermore, negative gain condition in the material gain spectra exists in the case of multiple quantum wells only at carrier concentration of 2×1018/cm3. The results suggest that the proposed nano-heterostructure is highly suitable as a light source in fiber optic links for long distance communication.

A Comparative Study on Optical Characteristics of InGaAsP QW Heterostructures of Type-I and Type-II Band Alignments Garima Bhardwaj; Sandhya K.; Richa Dolia; M. Abu-Samak; Shalendra Kumar; P. A. Alvi
Bulletin of Electrical Engineering and Informatics Vol 7, No 1: March 2018
Publisher : Institute of Advanced Engineering and Science

In this paper, we have configured InGaAsP QW (quantum well) heterostructures of type-I and type-II band alignments and simulated their optical characteristics by solving 6 x 6 Kohn-Luttinger Hamiltonian Matrix. According to the simulation results, the InGaAsP QW heterostructure of type-I band alignment has been found to show peak optical gain (TE mode) of the order of~3600/cm at the transition wavelength~1.40 µm; while of type-II band alignment has achieved the peak gain (TE mode) of the order of~7800/cm at the wavelength of~1.85 µm (eye safe region). Thus, both of the heterostructures can be utilized in designing of opto-or photonic devices for the emission of radiations in NIR (near infrared region) but form the high gain point of view, the InGaAsP of type-II band alignment can be more preferred.

Effects of Variation of Quantum Well Numbers on Gain Characteristics of Type-I InGaAsP/InP Nano-heterostructure S. G. Anjum; Sandhya K.; A. B. Khan; A. M. Khan; M. J. Siddiqui; P. A. Alvi
Bulletin of Electrical Engineering and Informatics Vol 6, No 3: September 2017
Publisher : Institute of Advanced Engineering and Science

This paper reports the effects of variation of number of quantum wells in material gain characteristics and lasing wavelength of step index separately confined type-I InGaAsP/InP lasing nano-heterostructure for different carrier concentrations at room temperature in TE (Transverse Electric) mode of polarization. Peak material gain is found to be highest when the number of quantum well is one in the structure. However, for the case of 3QWs, 5QWs and 7QWs, it is almost same at a particular carrier density. Lasing wavelength at peak material gain considerably increases as the number of quantum well layers vary from single quantum well layer to three quantum well layers in the active region and after that it will remain almost same by any further increase in number of quantum wells for a particular carrier density. Furthermore, negative gain condition in the material gain spectra exists in the case of multiple quantum wells only at carrier concentration of 2×1018/cm3. The results suggest that the proposed nano-heterostructure is highly suitable as a light source in fiber optic links for long distance communication.

A Comparative Study on Optical Characteristics of InGaAsP QW Heterostructures of Type-I and Type-II Band Alignments Garima Bhardwaj; Sandhya K.; Richa Dolia; M. Abu-Samak; Shalendra Kumar; P. A. Alvi
Bulletin of Electrical Engineering and Informatics Vol 7, No 1: March 2018
Publisher : Institute of Advanced Engineering and Science

In this paper, we have configured InGaAsP QW (quantum well) heterostructures of type-I and type-II band alignments and simulated their optical characteristics by solving 6 x 6 Kohn-Luttinger Hamiltonian Matrix. According to the simulation results, the InGaAsP QW heterostructure of type-I band alignment has been found to show peak optical gain (TE mode) of the order of~3600/cm at the transition wavelength~1.40 µm; while of type-II band alignment has achieved the peak gain (TE mode) of the order of~7800/cm at the wavelength of~1.85 µm (eye safe region). Thus, both of the heterostructures can be utilized in designing of opto-or photonic devices for the emission of radiations in NIR (near infrared region) but form the high gain point of view, the InGaAsP of type-II band alignment can be more preferred.

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