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0.18µm-CMOS Rectifier with Boost-converter and Duty-cycle-control for Energy Harvesting Roskhatijah Radzuan; Mohd Khairul Mohd Salleh; Nuha A. Rhaffor; Shukri Korakkottil Kunhi Mohd
Bulletin of Electrical Engineering and Informatics Vol 7, No 2: June 2018
Publisher : Institute of Advanced Engineering and Science

Existing works on battery-less of energy harvesting systems often assume as a high efficiency of rectifier circuit for power management system. In practice, rectifier circuit often varies with output power and circuit complexity. In this paper, based on a review of existing rectifier circuits for the energy harvesters in the literature, an integrated rectifier with boost converter for output power enhancement and complexity reduction of power management system is implemented through 0.18-micron CMOS process. Based on this topology and technology, low threshold-voltage of MOSFETs is used instead of diodes in order to reduce the power losses of the integrated rectifier circuit. Besides, a single switch with the duty-cycle control is introduced to reduce the complexities of the integrated boost converter. Measurement results show that the realistic performances of the rectifier circuit could be considerably improved based on the performances showed by the existing study.

0.18µm-CMOS Rectifier with Boost-converter and Duty-cycle-control for Energy Harvesting Roskhatijah Radzuan; Mohd Khairul Mohd Salleh; Nuha A. Rhaffor; Shukri Korakkottil Kunhi Mohd
Bulletin of Electrical Engineering and Informatics Vol 7, No 2: June 2018
Publisher : Institute of Advanced Engineering and Science

Existing works on battery-less of energy harvesting systems often assume as a high efficiency of rectifier circuit for power management system. In practice, rectifier circuit often varies with output power and circuit complexity. In this paper, based on a review of existing rectifier circuits for the energy harvesters in the literature, an integrated rectifier with boost converter for output power enhancement and complexity reduction of power management system is implemented through 0.18-micron CMOS process. Based on this topology and technology, low threshold-voltage of MOSFETs is used instead of diodes in order to reduce the power losses of the integrated rectifier circuit. Besides, a single switch with the duty-cycle control is introduced to reduce the complexities of the integrated boost converter. Measurement results show that the realistic performances of the rectifier circuit could be considerably improved based on the performances showed by the existing study.

0.18µm-CMOS Rectifier with Boost-converter and Duty-cycle-control for Energy Harvesting Roskhatijah Radzuan; Mohd Khairul Mohd Salleh; Nuha A. Rhaffor; Shukri Korakkottil Kunhi Mohd
Bulletin of Electrical Engineering and Informatics Vol 7, No 2: June 2018
Publisher : Institute of Advanced Engineering and Science

Existing works on battery-less of energy harvesting systems often assume as a high efficiency of rectifier circuit for power management system. In practice, rectifier circuit often varies with output power and circuit complexity. In this paper, based on a review of existing rectifier circuits for the energy harvesters in the literature, an integrated rectifier with boost converter for output power enhancement and complexity reduction of power management system is implemented through 0.18-micron CMOS process. Based on this topology and technology, low threshold-voltage of MOSFETs is used instead of diodes in order to reduce the power losses of the integrated rectifier circuit. Besides, a single switch with the duty-cycle control is introduced to reduce the complexities of the integrated boost converter. Measurement results show that the realistic performances of the rectifier circuit could be considerably improved based on the performances showed by the existing study.

Low voltage CMOS power amplifier with integrated analog pre-distorter for BLE 4.0 application Selvakumar Mariappan; Jagadheswaran Rajendran; Norlaili Mohd Noh; Harikrishnan Ramiah; Asrulnizam Abd Manaf; Shukri Korakkottil Kunhi Mohd; Yusman Mohd. Yusof
Indonesian Journal of Electrical Engineering and Computer Science Vol 14, No 2: May 2019
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v14.i2.pp895-902

In this paper, a low power consumption linear power amplifier (PA) for Bluetooth Low Energy (BLE) application is presented. An analogue pre-distorter (APD) is integrated to the PA. The APD consist of an active inductor, driver amplifier, and a RC phase linearizer. The PA delivers more than 12dB power gain from 2.4GHz to 2.5GHz. At the center frequency of 2.45GHz, the gain of the PA is 13dB with PAE of 26.7% and maximum output power of 14dBm. The corresponding OIP3 is 27.6dBm. The supply voltage headroom of this PA is 1.8V. The propose APD serves to be a solution to improve the linearity of the PA with minimum trade-off to the power consumption.

Electronic controlled CMOS inductor with patterned metal ground shields for fine inductance tuning application Nur Syahadah Yusof; Norlaili Mohd Noh; Jagadheswaran Rajendran; Asrulnizam Abd Manaf; Shukri Korakkottil Kunhi Mohd; Yusman Mohd. Yusof; Harikrishnan Ramiah; Mohamed Fauzi Bin Packeer Mohamed
Indonesian Journal of Electrical Engineering and Computer Science Vol 14, No 2: May 2019
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v14.i2.pp937-948

This paper is on an inductance fine tuning technique which benefits from the idea of varying the number of metal plates of an inductor’s pattern ground shield (PGS) shorted to ground to change its magnetic fields. This technique is unique because the geometry and physical shape of the inductor remains untouched from its form in the process design kit (PDK) while the inductance is being tuned. The number of metal shields shorted to ground was controlled by an electronic circuit which consists of analog-to-digital converters and active switches. Both Sonnet EM simulator and Cadence Virtuoso were used for the inductor and circuit simulations. From the simulation, it was found that the inductance increased while the Q-factor decreased as more metal shields were shorted to ground. For instance, at 1.6 GHz, the simulated inductance was 8.8 nH when all metals were floated and 9.4 nH when all metals were shorted to ground. On the other hand, the simulated Q-factor was 10.4 when all metals were floated and 9.8 when all metals were shorted to ground. From both simulation and measured results, both inductance and inductance tuning range increased with frequency. From the measured results too, the inductance observed was 9.4 nH at 1.6 GHz, 10.8 nH at 2 GHz, and 13.5 nH at 2.5 GHz when all the metal shields were shorted to ground. The inductance tuning range was 6.2% at 1.6 GHz, 12.5% at 2 GHz, and 20% at 2.5 GHz. The measured results showed good correlation with the simulated results trend, but with smaller value of inductance, inductance tuning range and Q-factor.

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