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All Journal Bulletin of Electrical Engineering and Informatics Bulletin of Electrical Engineering and Informatics Bulletin of Electrical Engineering and Informatics
Kavindra Kandpal
Birla Institute of Technology and Science Pilani
Computer Science & IT Electrical & Electronics Engineering Engineering

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Zinc Oxide Thin Film Transistors: Advances, Challenges and Future Trends Kavindra Kandpal; Navneet Gupta
Bulletin of Electrical Engineering and Informatics Vol 5, No 2: June 2016
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (664.657 KB) | DOI: 10.11591/eei.v5i2.530

Abstract

This paper presents a review on recent developments and future trends in zinc oxide thin film transistors (ZnO TFTs) together with challenges involved in this technology. It highlights ZnO TFT as next generation choice over other available thin film transistor technology namely a – Si: H (amorphous hydrogenated silicon), poly-Si (polycrystalline silicon) and OTFT (organic thin film transistor). This paper also provides a comparative analysis of various TFTs on the basis of performance parameters.  Effect of high –k dielectrics, grain boundaries, trap densities, and threshold voltage shift on the performance of ZnO TFT is also explained.
Zinc Oxide Thin Film Transistors: Advances, Challenges and Future Trends Kavindra Kandpal; Navneet Gupta
Bulletin of Electrical Engineering and Informatics Vol 5, No 2: June 2016
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (664.657 KB) | DOI: 10.11591/eei.v5i2.530

Abstract

This paper presents a review on recent developments and future trends in zinc oxide thin film transistors (ZnO TFTs) together with challenges involved in this technology. It highlights ZnO TFT as next generation choice over other available thin film transistor technology namely a – Si: H (amorphous hydrogenated silicon), poly-Si (polycrystalline silicon) and OTFT (organic thin film transistor). This paper also provides a comparative analysis of various TFTs on the basis of performance parameters.  Effect of high –k dielectrics, grain boundaries, trap densities, and threshold voltage shift on the performance of ZnO TFT is also explained.
Zinc Oxide Thin Film Transistors: Advances, Challenges and Future Trends Kavindra Kandpal; Navneet Gupta
Bulletin of Electrical Engineering and Informatics Vol 5, No 2: June 2016
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (664.657 KB) | DOI: 10.11591/eei.v5i2.530

Abstract

This paper presents a review on recent developments and future trends in zinc oxide thin film transistors (ZnO TFTs) together with challenges involved in this technology. It highlights ZnO TFT as next generation choice over other available thin film transistor technology namely a – Si: H (amorphous hydrogenated silicon), poly-Si (polycrystalline silicon) and OTFT (organic thin film transistor). This paper also provides a comparative analysis of various TFTs on the basis of performance parameters.  Effect of high –k dielectrics, grain boundaries, trap densities, and threshold voltage shift on the performance of ZnO TFT is also explained.
Co-Authors Navneet Gupta