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Abhijit Asati
Department of Electrical and Electronics Engineering Birla Institute of Technology and Science (BITS), Pilani, Rajasthan
Computer Science & IT Electrical & Electronics Engineering Engineering

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Leakage Immune 9T-SRAM Cell in Sub-threshold Region Priya Gupta; Anu Gupta; Abhijit Asati
Bulletin of Electrical Engineering and Informatics Vol 5, No 1: March 2016
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (521.603 KB) | DOI: 10.11591/eei.v5i1.557

Abstract

The paper presents a variability-aware modified 9T SRAM cell. In comparison to 6T SRAM cell the proposed  cell achieves 1.3× higher read-SNM and 1.77× higher write-SNM with 79.6% SINM (static current noise margin) distribution at the expense of 14.7× lower WTI (write trip current) at 0.4 V power supply voltage, while maintaining similar stability in hold mode. Thus, comparative analysis exhibits that the proposed design has a significant improvement, thereby achieving high cell stability at 45nm technology.
Leakage Immune 9T-SRAM Cell in Sub-threshold Region Priya Gupta; Anu Gupta; Abhijit Asati
Bulletin of Electrical Engineering and Informatics Vol 5, No 1: March 2016
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (521.603 KB) | DOI: 10.11591/eei.v5i1.557

Abstract

The paper presents a variability-aware modified 9T SRAM cell. In comparison to 6T SRAM cell the proposed  cell achieves 1.3× higher read-SNM and 1.77× higher write-SNM with 79.6% SINM (static current noise margin) distribution at the expense of 14.7× lower WTI (write trip current) at 0.4 V power supply voltage, while maintaining similar stability in hold mode. Thus, comparative analysis exhibits that the proposed design has a significant improvement, thereby achieving high cell stability at 45nm technology.
Leakage Immune 9T-SRAM Cell in Sub-threshold Region Priya Gupta; Anu Gupta; Abhijit Asati
Bulletin of Electrical Engineering and Informatics Vol 5, No 1: March 2016
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (521.603 KB) | DOI: 10.11591/eei.v5i1.557

Abstract

The paper presents a variability-aware modified 9T SRAM cell. In comparison to 6T SRAM cell the proposed  cell achieves 1.3× higher read-SNM and 1.77× higher write-SNM with 79.6% SINM (static current noise margin) distribution at the expense of 14.7× lower WTI (write trip current) at 0.4 V power supply voltage, while maintaining similar stability in hold mode. Thus, comparative analysis exhibits that the proposed design has a significant improvement, thereby achieving high cell stability at 45nm technology.
Co-Authors Anu Gupta Priya Gupta