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Karakteristik Film Tipis GaAs yang Ditumbuhkan dengan Metode MOCVD Menggunakan Sumber Metalorganik TDMAAs (Trisdimethylaminoarsenic) Andi Suhandi; Heri Sutanto; Pepen Arifin; Maman Budiman; Mohamad Barmawi
Jurnal Matematika & Sains Vol 10, No 1 (2005)
Publisher : Institut Teknologi Bandung

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Gallium Arsenide (GaAs) film have been grown by Metalorganic Chemical Vapor Deposition (MOCVD) method on Semi Insulating-Gallium Arsenide (SI-GaAs) substrates using of Trisdimethylaminoarsenic (TDMAAs) and Trimethylgallium (TMGa) precursors. The characteristic of GaAs film strongly depends on growth temperature. The best crystallinity quality of film was obtained at growth temperature, V/III ratio, reactor pressure, N2 and H2 dilute are 580 oC, 4.8, 50 torr, 300 sccm, respectively. X-ray diffraction data indicate that the GaAs films grown at 580 oC show epitaxial layer with FWHM on (200) peak of about 0,477o. Hall effect measurement data indicate that the grown layer were p-type semiconductor, with Hall mobility and carrier concentration in the range of 346 cm2/V.s and 3.17 x 1017 cm-3, respectively. The band gap of GaAs films determined by photoluminiscense (PL) measurement was 1,42 eV. This value is same as the band gap of bulk GaAs.
Fabrication and Characterization of Metal-Semiconductor-Metal n-GaN UV Photodetector by PA-MOCVD Dadi Rusdiana; Sugianto Sugianto; Andi Suhandi; Sukirno Sukirno; Maman Budiman; Mohamad Barmawi
Jurnal Matematika & Sains Vol 10, No 1 (2005)
Publisher : Institut Teknologi Bandung

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Metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN epitaxial layers grown on (0001) sapphire by plasma-assisted metal organic chemical vapor deposition (PA-MOCVD) method. The photodetector with a thin GaN layer of 0.7 µm exhibited a low dark current with a saturation value of 1.469 x 10-14 A. The responsivity was 0.56 A/W at a wavelength of 320 nm under a bias voltage of 2.5 V.
GaN-based Double-hetero Film Grown and Fabricated on (0001) Sapphire Substrates by Plasma-assisted MOCVD Heri Sutanto; Edi Supriyanto; Maman Budiman; Pepen Arifin; Sukirno Sukirno; Mohamad Barmawi
Jurnal Matematika & Sains Vol 10, No 2 (2005)
Publisher : Institut Teknologi Bandung

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GaN-based double-hetero film has been grown on (0001) sapphire substrate by plasma-assisted MOCVD method. The structure of film was n-GaN/Al0.25Ga0.75N/In0.3Ga0.7N/Al0.25Ga0.75N/p-GaN. A photoluminescence (PL) peak originating from InGaN active layer has been observed at room temperature, which produced emission wavelength of 453 nm corresponded to energy of 2.74 eV. However, broadening of the peak caused by the crystalline quality of the InGaN epilayer is still poor, which is related with fluctuation of In rich regions.
Karakteristik Struktur dan Listrik Film Tipis GaN yang Ditumbuhkan di atas Substrat Si(111) dengan Metode Plasma Assisted-Metalorganic Chemical Vapor Deposition (PA-MOCVD) Heri Sutanto; Agus Subagio; Edi Supriyanto; Pepen Arifin; Sukirno Sukirno; Maman Budiman; Mohamad Barmawi
Jurnal Matematika & Sains Vol 11, No 1 (2006)
Publisher : Institut Teknologi Bandung

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Gallium nitride (GaN) thin films have been grown on Si(111) substrate by PA-MOCVD method, with trimethylgallium (TMGa) and radical nitrogen resulted by plasma of nitrogen gas as a source of Ga and N respectively. The growth was performed at 675 °C; 0.4 torr; 90 sccm and 0.08-0.12 sccm of substrate temperature, reactor pressure, gas flow of nitrogen and TMGa, respectively. The grown polycrystalline GaN thin films have hexagonal structure and n-type semiconductor. The growth rate of the grown thin films increased with increasing gas flow of TMGa. The Hall mobility value of films is still low due to the presence of O and C impurities. The highest value of mobility was found to be 64.88 cm2/V.s with 5.47 x 1018 cm-3 of carrier concentration.
N-Type Conductivity in Wurtzite Mn-Doped GaN thin Films Grown by Plasma Assisted MOCVD Budi Mulyanti; Agus Subagio; Edi Supriyanto; Heri Sutanto; Fitri Suryani Arsyad; Pepen Arifin; Maman Budiman; Mohamad Barmawi
Jurnal Matematika & Sains Vol 11, No 2 (2006)
Publisher : Institut Teknologi Bandung

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Ferromagnetic semiconductor GaN:Mn thin films were successfully grown by plasma-assisted metalorganic chemical vapor deposition (PA-MOCVD) method on c-plane sapphire substrate. The films were grown at various Mn source flux in the range of 5 - 40 sccm and growth temperature which was lower than that of MOCVD themal, i.e. in the range of 625-700 °C. Cyclopentadienyl manganese tricarbonyl (CpMnT) was used as a source of Mn. X-ray diffraction patterns confirmed that GaN:Mn films are wurtzite and do not show second phase for film with Mn concentration up to 6.4% at 650 °C of growth temperature. Hall effect measurements show n-type characteristics. The carrier (electron) density tends to decreases and Hall mobility tends to with the increase of Mn concentration is increased. Hysteresis curves observed from VSM measurements indicated that all of the samples are ferromagnetic at room temperature.
Magnetoresistansi Divais Spintronika TiO2:Co/Si/TiO2:Co [Spintronics Magnetoresistance Device with TiO2:Co/Si/TiO2:Co] Edy Supriyanto; Agus Subagio; Hery Sutanto; Horasdia Saragih; Maman Budiman; Pepen Arifin; Sukirno Sukirno; Mohamad Barmawi
Jurnal Matematika & Sains Vol 12, No 1 (2007)
Publisher : Institut Teknologi Bandung

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TiO2:Co thin films were grown on Si substrates by Metalorganic Chemical Vapor Deposition (MOCVD) technique using titanium(IV)isopropoxide and tris(2,2,6,6-tetramethyl-3,5-heptanedionato)cobalt (III), and oxygen gas. The films grown at temperature of 450 oC were crystalline having a rutile structure with (002) orientation. Based on Energy Dispersive Spectroscope (EDS) analysis, Co content in TiO2 was 1.83% and films exhibit ferromagnetic properties at room temperature. Hysteresis curves obtained from Vibrating Sample Magnetometer (VSM) measurement have coercive and saturation magnetic fields of 130 Oe and 2.1 emu/cm3, respectively. Application of TiO2:Co as injection material in spintronic device with TiO2:Co/Si/TiO2:Co structure was investigated. The effect of polarized spin injection (magnetoresistance phenomenon) was observed from the current-voltage characteristics of the device.
Pengaruh Temperatur Penumbuhan terhadap Struktur Kristal dan Morfologi Film Tipis TiO2:Eu yang Ditumbuhkan dengan Metode MOCVD [The Effect of Growth Temperature on the Crystall Structure and Morphology of the Thin Film TiO2:Eu Grown with MOCVD Method] Edy Supriyanto; Goib Wiranto; Hery Sutanto; Agus Subagio; Mikrajuddin Abdullah; Maman Budiman; Pepen Arifin; Sukirno Sukirno; Mohamad Barmawi
Jurnal Matematika & Sains Vol 12, No 2 (2007)
Publisher : Institut Teknologi Bandung

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Thin film of TiO2:Eu had been grown on an n-type Si(100) substrate using Metalorganic Chemical Vapor Deposition (MOCVD) method with titanium (IV) isopropoxide [Ti{OCH(CH3)2}4] 99.99% and europium nitrate [Eu(NO3)3.6H2O] 99.99% as the metal organic precursors. The tetrahydrofuran (THF) was used as a solvent for the precursor. X-ray Diffraction (XRD) analysis showed that the TiO2:Eu thin film grown at temperature of 450 οC had crystal planes of rutile (200), rutile (002) and anatase (211), whereas film grown at 500 οC resulted in a crystal plane of rutile (002) with columnar grain and surface morphology relatively smooth. On the other hand, film grown at temperature of 550 οC has rutile (200) and rutile (002) planes. The surface morphology of thin films TiO2:Eu was affected by Eu atom concentration. The roughness of surface morphology increased with increasing Eu content and therefore the grains became larger. It can be concluded that the crystal structure and surface morphology properties of the films depended significantly on the substrate temperature.
Kapasitor MOS dengan dielektrik Ceria Amorf Khairurrijal Khairurrijal; Darsikin Darsikin; Maman Budiman
Jurnal Matematika & Sains Vol 9, No 3 (2004)
Publisher : Institut Teknologi Bandung

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Amorphous ceria (CeO2) thin films were deposited on a silicon (100) substrate by using a pulsed-laser ablation deposition (PLAD) technique. The substrate temperature was varied from 600 to 7000 C and the ambient was a pure oxygen gas at the pressure of 100 mTorr. It was found that the growth rate is 17.5 nm/min. Low fixed-charge densities (1011/cm2) and high resistivies (109-1012 Ω cm) of the CeO2 thin films indicate that the films could be used for oxide layer of metal-oxide-semiconductor (MOS) capacitors. Electron conduction mechanism in the CeO2 thin films is ohmic at voltages below 1 V while that at voltages above 1 V are due to quantum tunneling process.
Studi Pengaruh Rasio Masukan Sumber V/III Terhadap Distribusi Sb dan Karakteristik Kelistrikan Lapisan Tipis GaAs1-x Sbx yang Ditumbuhkan dengan Teknik MOCVD [On the Study of the Effect of Source Input V/III to the Distribution of Sb and Electricity.....] Andi Suhandi; Pepen Arifin; Maman Budiman; Muhamad Barmawi
Jurnal Matematika & Sains Vol 12, No 3 (2007)
Publisher : Institut Teknologi Bandung

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The study of the dependence of the Sb distribution in GaAs1-xSbx films and the electric properties of the GaAs1-xSbx filmsgrown by MOCVD technique using TMGa, TDMAAs, and TDMASb to the V/III source input ratio has been done. The Sbsolid composition in GaAs1-xSbx film was determined by using Vegards law from the shift of the peak intensity of X-raydiffraction pattern. Electric properties of the GaAs1-xSbx films were investigated through room temperature Hall effectmeasurement. The results suggest that the concentration of Sb incorporation into the GaAs1-xSbx films is stronglyaffected by V/III source input ratio. For V/III source input ratio of unity, the Sb distribution coefficient, which is theratio of the Sb composition in GaAs1-xSbx solid to the Sb vapor input mole fraction, is nearly unity. The Sb distributioncoefficient decreases with increasing of V/III source input ratio, for V/III input ratio langer than 1. The range of carriermobility are between 200 – 430 cm2/V.s, depending on the V/III input ratio, and the Sb composition. The highest carriermobility occurred at V/III input ratio of approximately one.
Studi Pengaruh Rasio V/III terhadap Morfologi Permukaan Film Tipis GaSb yang Lilik Hasanah; Euis Sustini; Sukirno Sukirno; Maman Budiman
Jurnal Matematika & Sains Vol 8, No 3 (2003)
Publisher : Institut Teknologi Bandung

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Gallium Antimony (GaSb) thin film were grown on Semi Insulating (SI) GaAs (100) substrate by MOCVD (Metal-Organic Chemical Vapor Deposition) method. TMGa (trimethylgallium) and TDMASb (tridismethylaminoantimony) were used as precursors of group III and V, respectively, with H2 as gas carrier. The films were grown with V/III varied between 1,15 and 3,1. V/III ratio dependent of surface morphplogy and atomic composition of GaSb thin films were studied. The best surface morphology stoichiometric GaSb obtained at the V/II ratio of 2.0.
Co-Authors A. Suhandi Agus Subagio Budi Mulyanti Darsikin Darsikin Edi Supriyanto Edy Supriyanto Euis Sustini Fitri Suryani Arsyad Goib Wiranto Heri Sutanto Hery Sutanto Horasdia Saragih Khairurrijal Khairurrijal Lilik Hasanah Mikrajuddin Abdullah Mohamad Barmawi Muhamad Barmawi Pepen Arifin Sugianto - Sukirno Sukirno