Fatimah A. Noor
Kelompok Keahlian Fisika Material Elektronik, Fakultas Matematika dan Ilmu Pengetahuan Alam, Institut Teknologi Bandung

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Effect of Thickness and Temperature of SiO2 Layer on Leakage Currents in MOS Capacitor Materials with High Dielectric Constant by Involving the Charge Trap Noor, Fatimah A.; Masturi, Masturi; Abdullah, Mikrajuddin; Khairurrijal, Khairurrijal
Jurnal ILMU DASAR Vol 15 No 1 (2014)
Publisher : Fakultas Matematika dan Ilmu Pengetahuan Alam Universitas Jember

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (657.255 KB) | DOI: 10.19184/jid.v15i1.642

Abstract

Modeling of the leakage current in a field-effect transistor metal-oxide-semiconductor (MOSFET) with high dielectric material has been developed by taking into account the effect of charge traps formed at the interface of high-k material/SiO2. Transmittance calculated using Airy wave function approach and involving the anisotropic electron mass and the effect of coupling between transverse and longitudinal energy represented by the speed of the electrons in the metal gate. Transmittance obtained is then used to calculate the leakage current in the structure of n+Poly-Si/HfSiOxN/trap/SiO2/p-Si for oxide voltage variations, temperature, and thickness of the SiO2. From the calculation that the leakage current decreases with decreasing of oxide voltage and increasing of the thickness of the oxide layer of SiO2. Also obtained that the temperature of the device does not give a great influence on the change of leakage current. Keywords: Leakage current, electron speed, charge traps
Transmission Coefficient of an Electron through a Heterostructure with Nanometer-Thick Trapezoidal Barrier Grown on an Anisotropic Material Hasanah, Lilik; Noor, Fatimah A.; Khairurrijal, Khairurrijal; Abdullah, Mikrajuddin; Winata, Toto; Sukirno, Sukirno
Journal of Mathematical and Fundamental Sciences Vol. 38 No. 1 (2006)
Publisher : Institute for Research and Community Services (LPPM) ITB

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.5614/itbj.sci.2006.38.1.3

Abstract

Transmission coefficient of an electron incident on a heterostructure potential with nanometer-thick trapezoidal barrier grown on anisotropic materials are derived by solving the effective-mass equation including off-diagonal effective-mass tensor elements. The boundary condition for an electron wave function (under the effective-mass approximation) at a heterostructure anisotropic junction is suggested and included in the calculation. The analytic expressions are applied to the Si(110)/Si0.5Ge0.5/Si(110) heterostructure, in which the SiGe barrier thickness is several nanometers. It is assumed that the direction of propagation of the electrons makes an arbitrary angle with respect to the interfaces of the heterostructure and the effective mass of the electron is position dependent. The transmission coefficient is calculated for energy below the barrier height, varying the applied voltage to the barrier. The transmission coefficient depends on the valley where the electron belongs and it is not symmetric with respect to the incidence angle.