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Numerical Simulation of Tunneling Current in an Anisotropic Metal-Oxide-Semiconductor Capacitor Noor, Fatimah Arofiati; Iskandar, Ferry; Abdullah, Mikrajuddin; khairurrijal, Khairurrijal
Indonesian Journal of Electrical Engineering and Computer Science Vol 10, No 3: July 2012
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar

Abstract

In this paper, we have developed a model of the tunneling currents through a high-k dielectric stack in MOS capacitors with anisotropic masses. The transmittance was numerically calculated by employing a transfer matrix method and including longitudinal-transverse kinetic energy coupling which is represented by an electron phase velocity in the gate. The transmittance was then applied to calculate tunneling currents in TiN/HfSiOxN/SiO2/p-Si MOS capacitors. The calculated results show that as the gate electron velocity increases, the transmittance decreases and therefore the tunneling current reduces. The tunneling current becomes lower as the effective oxide thickness (EOT) of HfSiOxN layer increases. When the incident electron passed through the barriers in the normal incident to the interface, the electron tunneling process becomes easier. It was also shown that the tunneling current was independent of the substrate orientation. Moreover, the model could be used in designing high speed MOS devices with low tunneling currents. DOI: http://dx.doi.org/10.11591/telkomnika.v10i3.607
EFEK SUMBER KARBON PADA PROPERTI LUMINESENSI BCNO YANG DISINTESIS DENGAN METODE PEMANASAN GELOMBANG MIKRO Ramdani, Feri; Faryuni, Irfana Diah; Muid, Abdul; Sampurno, Joko; Nuryadin, Bebeh Wahid; Noor, Fatimah Arofiati
Jurnal Fisika FLUX Vol 13, No 2 (2016): Jurnal Fisika FLUX Edisi Agustus 2016
Publisher : Lambung Mangkurat University Press

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.20527/flux.v13i2.3011

Abstract

ABSTRACT- A BCNO phosphor was successfully synthesized using a microwave method and atmospheric pressure. The phosphors were prepared from precursors containing boric acid as a boron source, urea as a nitrogen source and poly ethylene glycol (PEG) as a carbon source. The carbon sources were varied by PEG MW 1000, MW 6000 and MW 20000.  The objective of this research is to study the effect of variations in the carbon source to the luminescence properties of BCNO that synthesized using microwave. The emission wavelength of the samples are in violet area (380-450 nm) and the highest emission intensity was 47 a.u. produced by BCNO which using PEG MW 20000 as the carbon source.
PENGARUH MASSA SOURCE TERHADAP KETEBALAN THIN FILM MELALUI DEPOSISI VACUUM THERMAL EVAPORATION Abidin, Kurniati; Malago, Jasruddin Daud; Noor, Fatimah Arofiati; Winata, Toto
JFT : Jurnal Fisika dan Terapannya Vol 8 No 1 (2021): JUNI
Publisher : Universitas Islam Negeri Alauddin Makassar

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.24252/jft.v8i1.21350

Abstract

Purpose of this research to determine the effect of mass of source on thickness of thin film, with using the vacuum thermal evaporation. The metal used is Ag with a purity of 99,99% as a source of evaporated metal and using glass preparations as a substrate on which metal is deposited. By using three types of characterization such as FPP, SEM and EDS, the research results were obtained accurately. Based on  these characterizations, the results obtained a significant relationship between mass of source and thickness of thin film, increasing the mass of the source will increase the thickness of thin film. This result can be used as a reference in producing thin films with specific of thickness.
Studi Elektrostatik Elektroda Runcing dan Aplikasinya pada Perangkat Floating Gate Memory Noor, Fatimah Arofiati; Kartiwa, Gilang Mardian; Sulthoni, Muhammad Amin
POSITRON Vol 11, No 1 (2021): Vol. 11 No. 1 Edition
Publisher : Fakultas Matematika dan Ilmu Pengetahuan Alam, Univetsitas Tanjungpura

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.26418/positron.v11i1.44881

Abstract

Pada penelitian ini, potensial elektrostatik dari struktur floating gate runcing dalam sel memori split gate dipelajari secara analitik dan numerik. Penelitian ini bertujuan memberikan pendekatan sederhana untuk mempelajari diagram pita energi pada perangkat memori. Diagram energi yang dihasilkan dapat digunakan untuk mempelajari transmitansi elektron dan rapat arus terobosan. Pada studi ini, floating gate runcing dimodelkan sebagai elektroda berbentuk segitiga. Profil potensial elektrostatik elektroda segitiga ini dihitung secara analitik dengan menyelesaikan nilai batas dari persamaan Laplace dalam koordinat polar. Profil potensial dari perhitungan analitik ini lalu dibandingkan dengan profil potensial dari simulasi numerik. Dari hasil perhitungan diperoleh bahwa profil diagram energi yang dihitung secara analitik cukup sesuai dengan yang diperoleh dari simulasi numerik. Adapun terdapat sedikit perbedaan antara profil diagram pita analitik dan numerik dikarenakan elektroda segitiga diasumsikan terbuat dari logam sehingga pembentukan sumur kuantum pada permukaan floating gate diabaikan. Dari hasil permodelan analitik diperoleh bahwa sumur kuantum yang terbentuk pada tegangan sekitar 10 V (sesuai dengan tegangan hapus perangkat memori flash) adalah cukup dangkal, sehingga profil potensial yang terbentuk menjadi sangat mendekati hasil simulasi numerik. Dari hasil perhitungan diperoleh pula bahwa rapat arus terobosan yang dihitung menggunakan model kami memberikan hasil yang sangat dekat dengan hasil perhitungan dari model injektor silinder yang digunakan oleh peneliti dari Silicon Storage Technology (SST) sebagai produsen produk flash memory dengan floating gate berbentuk runcing.