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Sukirno Sukirno
Kelompok Keahlian Fisika Material Elektronik, Fakultas Matematika dan Ilmu Pengetahuan Alam, Institut Teknologi Bandung
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Aplikasi Metoda Elemen Hingga Dengan Algoritma Crank-Nicolson Dalam Penyelesaian Persamaan Difusi Panas Untuk Pembuatan Sel Surya Silikon Amorf (a-Si) Terpadu Ridwan Abdullah Sani; M. Barmawi; Toto Winata; Sukirno Sukirno
Jurnal Matematika & Sains Vol 1, No 1 (1996)
Publisher : Institut Teknologi Bandung

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The solution of thermal diffusion equation computed numerically by finite element method is used to determine optimum conditions of laser irradiations in the solar cell fabrication. Structure discretization is analyzed in axisymmetric triangular ring elements. The program are codes in written using Fortran 77 language. The Crank-Nicolson algorithm and Fortran 77 IMSL library were used in solving stiffnen matrix equations of the structure. The convergence of the results are shown 50, 98, and 140 elements. The temperature distribution of at the center of laser beam in the all three layers of a-Si solar cells is also shown and superior compared with that of Kishi et al [19].
Fabrication and Characterization of Metal-Semiconductor-Metal n-GaN UV Photodetector by PA-MOCVD Dadi Rusdiana; Sugianto Sugianto; Andi Suhandi; Sukirno Sukirno; Maman Budiman; Mohamad Barmawi
Jurnal Matematika & Sains Vol 10, No 1 (2005)
Publisher : Institut Teknologi Bandung

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Metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN epitaxial layers grown on (0001) sapphire by plasma-assisted metal organic chemical vapor deposition (PA-MOCVD) method. The photodetector with a thin GaN layer of 0.7 µm exhibited a low dark current with a saturation value of 1.469 x 10-14 A. The responsivity was 0.56 A/W at a wavelength of 320 nm under a bias voltage of 2.5 V.
Optimasi Parameter Tekanan Deposisi pada Penumbuhan Lapisan Tipis Polykristal Silikon dengan Metode Hot Wire Cell PECVD Amiruddin Supu; Ida Usman; Mursal Mursal; Toto Winata; Sukirno Sukirno
Jurnal Matematika & Sains Vol 10, No 1 (2005)
Publisher : Institut Teknologi Bandung

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The Hot wire Cell PECVD method has been developed to grow the poly-Si thin films. The poly-Si thin films were grown on the 7059 corning glass at a filament temperature of 1800 oC. Silane (SiH4) gas 10% diluted in hydrogen (H2) gas was used as gas source. In the hot wire cell PECVD method, reactant gases were decomposed as a result of reaction with a heated filament placed above the substrate and paralel to the gas inlet. The characterization results exhibited that the poly-Si thin films could be grown at the pressure of 200 to 500 mTorr with a substrate temperature of 275 oC. The analysis of XRD result showed that preferential intensity was obtained at the crystal orientation of . The highest values of peak intensity (111 cps), grains size (minor axis 0.5 µm) and dark conductivity (0.60x10-5 Scm-1) were obtained at the deposition pressure of 300 mTorr with deposition rate of 2.2 nm/s.
GaN-based Double-hetero Film Grown and Fabricated on (0001) Sapphire Substrates by Plasma-assisted MOCVD Heri Sutanto; Edi Supriyanto; Maman Budiman; Pepen Arifin; Sukirno Sukirno; Mohamad Barmawi
Jurnal Matematika & Sains Vol 10, No 2 (2005)
Publisher : Institut Teknologi Bandung

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GaN-based double-hetero film has been grown on (0001) sapphire substrate by plasma-assisted MOCVD method. The structure of film was n-GaN/Al0.25Ga0.75N/In0.3Ga0.7N/Al0.25Ga0.75N/p-GaN. A photoluminescence (PL) peak originating from InGaN active layer has been observed at room temperature, which produced emission wavelength of 453 nm corresponded to energy of 2.74 eV. However, broadening of the peak caused by the crystalline quality of the InGaN epilayer is still poor, which is related with fluctuation of In rich regions.
Analisis Sifat-sifat Optoelektronik Lapisan Tipis Silikon Amorf terhidrogenasi yang ditumbuhkan dengan Teknik VHF-PECVD pada Variasi Daya RF Ida Usman; Amiruddin Supu; Mursal Mursal; Sukirno Sukirno; Toto Winata; Mohamad Barmawi
Jurnal Matematika & Sains Vol 10, No 2 (2005)
Publisher : Institut Teknologi Bandung

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The hydrogenated amorphous silicon (a-Si:H) thin films have been deposited using VHF-PECVD technique. The deposition process was done by varied the rf power from 6 to 12.5 watts with 300 mTorr of chamber pressure and from 20 to 70 watts with 100 mTorr of chamber pressure. The highest deposition rate of 2.99 Å/sec and the highest photoconductivity of 1.13 x 10-4 S/cm were obtained from 8 watts of rf power when the rf power was varied from 6 to 12.5 watts. Then, the highest deposition rate of 9.57 Å/sec was obtained from 40 watts of rf power and the highest photoconductivity of 1.54 x 10-2 S/cm was obtained from 20 watts of rf power when the rf power was varied from 20 to 70 watts. Based on the analysis of characterization results, the degradation of a-Si:H film conductivity was caused by the formation of defect states such as band-tail defect and bandgap defect.
Sifat Listrik Film Tipis SrTiO3 untuk Kapasitor MOS Darsikin Darsikin; Khairurrijal Khairurrijal; Sukirno Sukirno; Mohamad Barmawi
Jurnal Matematika & Sains Vol 10, No 3 (2005)
Publisher : Institut Teknologi Bandung

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Strontium titanate (SrTiO3) film was successfully deposited on a silicon substrate by using a pulsed-laser ablation deposition (PLAD) technique. The optimum temperature is 600o C. The electrical properties measurement was metal-oxide-semiconductor capacitor. The film exhibits good insulating property at room temperature. The fixed charge density and leakage current density were also calculated. The results show that the films have promising applications as alternative gate dielectrics.
Penumbuhan Lapisan Tipis µc-Si:H dengan Sistem Hot Wire PECVD untuk Aplikasi Divais Sel Surya Syamsu Syamsu; Darsikin Darsikin; Iqbal Iqbal; Jusman Jusman; Toto Winata; Sukirno Sukirno; Mohamad Barmawi
Jurnal Matematika & Sains Vol 10, No 3 (2005)
Publisher : Institut Teknologi Bandung

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Microcrystalline hydrogenated silicon thin films have been grown on corning 7059 by using Hot Wire Plasma Enhanced Chemical Vapor Deposition (PECVD) system. Silane gas dilute in hydrogen gas (SiH4: H2 = 1 : 10 ) used as gas source. The effect substrate temperatures on deposition rate, optical, electrical and structural properties were analyzed. The deposition rate was varied from 3.22-5.24 µm/hour at temperature 175-275o C, SiH4 flow rate of 70 sccm, and filament temperature ~ 1000oC. The optical band gap varied from 1.13-1.44 eV at substrate temperature of 175-275. The Result XRD characterization of µc-Si: H thin film was grown at 275o C shows , , and orientation. Dark conductivities vary from 10-6-10-4 S/cm The Dark conductivity of µc-Si: H is higher than a-Si: H thin film. This result shows that µc-Si: H thin film is possible for p-i-n solar cells device application.  
Pengaruh Daya RF terhadap Kandungan Ge dan Sifat Opto-Elektronik Lapisan Tipis a-SiGe:H Mursal Mursal; Amiruddin Supu; Ida Usman; Toto Winata; Sukirno Sukirno
Jurnal Matematika & Sains Vol 10, No 4 (2005)
Publisher : Institut Teknologi Bandung

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The effect of rf power on Ge content (CGe) and opto-electronic properties of a-SiGe:H thin films deposited by PECVD method had been investigated. a-SiGe:H thin films were grown on corning glass 7059 substrate from a gas mixture of SiH4 and GeH4 10% diluted in H2, respectively. The substrate temperature was kept at 275oC and the rf power was varied from 50 - 120 Watt. The results showed that the CGe of a-SiGe:H thin films decreases with increasing in rf power, and therefore the optical bandgap (Eopt) increases. We found that the optimum rf power was 90 Watt, which corresponds to the highest photo-sensitivity of 1.43 x 104.
Karakteristik Struktur dan Listrik Film Tipis GaN yang Ditumbuhkan di atas Substrat Si(111) dengan Metode Plasma Assisted-Metalorganic Chemical Vapor Deposition (PA-MOCVD) Heri Sutanto; Agus Subagio; Edi Supriyanto; Pepen Arifin; Sukirno Sukirno; Maman Budiman; Mohamad Barmawi
Jurnal Matematika & Sains Vol 11, No 1 (2006)
Publisher : Institut Teknologi Bandung

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Gallium nitride (GaN) thin films have been grown on Si(111) substrate by PA-MOCVD method, with trimethylgallium (TMGa) and radical nitrogen resulted by plasma of nitrogen gas as a source of Ga and N respectively. The growth was performed at 675 °C; 0.4 torr; 90 sccm and 0.08-0.12 sccm of substrate temperature, reactor pressure, gas flow of nitrogen and TMGa, respectively. The grown polycrystalline GaN thin films have hexagonal structure and n-type semiconductor. The growth rate of the grown thin films increased with increasing gas flow of TMGa. The Hall mobility value of films is still low due to the presence of O and C impurities. The highest value of mobility was found to be 64.88 cm2/V.s with 5.47 x 1018 cm-3 of carrier concentration.
Optimization of Deposition Parameters for high Quality a-SiGe:H Thin Films Mursal Mursal; Ida Usman; Toto Winata; Sukirno Sukirno; Mohamad Barmawi
Jurnal Matematika & Sains Vol 11, No 2 (2006)
Publisher : Institut Teknologi Bandung

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The effect of substrate temperature and rf power on the characteristics of a-SiGe:H alloys thin films has been investigated. The a-SiGe:H films made from a mixture of 10% silane (SiH4) and 10% germane (GeH4) gas diluted in hydrogen (H2) were grown on corning glass 7059 by using Plasma Enhanced Chemical Vapor Deposition (PECVD) method. The results showed that the deposition rate of a-SiGe:H films increased with the increasing of substrate temperature and rf power. The optical band gap (Eopt) of the films was improved by increasing of the rf power. The dependency of Eopt on the rf power is attributed to the change in Ge content in the films. The photosensitivity (σph/σd) of the films deposited at 200 °C and 175 °C slightly increased with increasing of rf power from 30-50 Watt. For the films deposited at 225 °C, the photosensitivity increased with increasing of rf power from 30-40 Watt, and relatively constant at rf power of 40-60 Watt.
Co-Authors A. Suhandi Agus Subagio Amiruddin Supu Darsikin Darsikin Edi Supriyanto Edy Supriyanto Euis Sustini Fitri Suryani Arsyad Goib Wiranto Hasniah Aliah Heri Sutanto Hery Sutanto Horasdia Saragih I Wayan Sukarjita Ida Usman Iqbal Iqbal Jusman Jusman Khairurrijal Khairurrijal Lilik Hasanah M. Barmawi Maman Budiman Mikrajuddin Abdullah Mohamad Barmawi Mursal Mursal Pepen Arifin Ridwan Abdullah Sani Sugianto - Syamsu Syamsu Toto Winata