Article Per Year (5 Year)
p-Index From 2019 - 2024
0
P-Index
This Author published in this journals
All Journal Jurnal Matematika & Sains
Sukirno Sukirno
Kelompok Keahlian Fisika Material Elektronik, Fakultas Matematika dan Ilmu Pengetahuan Alam, Institut Teknologi Bandung
Mathematics

Published : 15 Documents Claim Missing Document
Claim Missing Document
Check
Articles

Found 15 Documents
Search

 1   2 
Magnetoresistansi Divais Spintronika TiO2:Co/Si/TiO2:Co [Spintronics Magnetoresistance Device with TiO2:Co/Si/TiO2:Co] Edy Supriyanto; Agus Subagio; Hery Sutanto; Horasdia Saragih; Maman Budiman; Pepen Arifin; Sukirno Sukirno; Mohamad Barmawi
Jurnal Matematika & Sains Vol 12, No 1 (2007)
Publisher : Institut Teknologi Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar

Abstract

TiO2:Co thin films were grown on Si substrates by Metalorganic Chemical Vapor Deposition (MOCVD) technique using titanium(IV)isopropoxide and tris(2,2,6,6-tetramethyl-3,5-heptanedionato)cobalt (III), and oxygen gas. The films grown at temperature of 450 oC were crystalline having a rutile structure with (002) orientation. Based on Energy Dispersive Spectroscope (EDS) analysis, Co content in TiO2 was 1.83% and films exhibit ferromagnetic properties at room temperature. Hysteresis curves obtained from Vibrating Sample Magnetometer (VSM) measurement have coercive and saturation magnetic fields of 130 Oe and 2.1 emu/cm3, respectively. Application of TiO2:Co as injection material in spintronic device with TiO2:Co/Si/TiO2:Co structure was investigated. The effect of polarized spin injection (magnetoresistance phenomenon) was observed from the current-voltage characteristics of the device.
Pengaruh Temperatur Penumbuhan terhadap Struktur Kristal dan Morfologi Film Tipis TiO2:Eu yang Ditumbuhkan dengan Metode MOCVD [The Effect of Growth Temperature on the Crystall Structure and Morphology of the Thin Film TiO2:Eu Grown with MOCVD Method] Edy Supriyanto; Goib Wiranto; Hery Sutanto; Agus Subagio; Mikrajuddin Abdullah; Maman Budiman; Pepen Arifin; Sukirno Sukirno; Mohamad Barmawi
Jurnal Matematika & Sains Vol 12, No 2 (2007)
Publisher : Institut Teknologi Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar

Abstract

Thin film of TiO2:Eu had been grown on an n-type Si(100) substrate using Metalorganic Chemical Vapor Deposition (MOCVD) method with titanium (IV) isopropoxide [Ti{OCH(CH3)2}4] 99.99% and europium nitrate [Eu(NO3)3.6H2O] 99.99% as the metal organic precursors. The tetrahydrofuran (THF) was used as a solvent for the precursor. X-ray Diffraction (XRD) analysis showed that the TiO2:Eu thin film grown at temperature of 450 οC had crystal planes of rutile (200), rutile (002) and anatase (211), whereas film grown at 500 οC resulted in a crystal plane of rutile (002) with columnar grain and surface morphology relatively smooth. On the other hand, film grown at temperature of 550 οC has rutile (200) and rutile (002) planes. The surface morphology of thin films TiO2:Eu was affected by Eu atom concentration. The roughness of surface morphology increased with increasing Eu content and therefore the grains became larger. It can be concluded that the crystal structure and surface morphology properties of the films depended significantly on the substrate temperature.
Studi Pengaruh Rasio V/III terhadap Morfologi Permukaan Film Tipis GaSb yang Lilik Hasanah; Euis Sustini; Sukirno Sukirno; Maman Budiman
Jurnal Matematika & Sains Vol 8, No 3 (2003)
Publisher : Institut Teknologi Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar

Abstract

Gallium Antimony (GaSb) thin film were grown on Semi Insulating (SI) GaAs (100) substrate by MOCVD (Metal-Organic Chemical Vapor Deposition) method. TMGa (trimethylgallium) and TDMASb (tridismethylaminoantimony) were used as precursors of group III and V, respectively, with H2 as gas carrier. The films were grown with V/III varied between 1,15 and 3,1. V/III ratio dependent of surface morphplogy and atomic composition of GaSb thin films were studied. The best surface morphology stoichiometric GaSb obtained at the V/II ratio of 2.0.
Optimasi Parameter Tekanan Deposisi untuk Penumbuhan Lapisan Tipis Mikrokristal Silikon dengan Metode HWC PECVD Amiruddin Supu; I Wayan Sukarjita; Fakhruddin Fakhruddin; Fitri Suryani Arsyad; Toto Winata; Sukirno Sukirno
Jurnal Matematika & Sains Vol 13, No 4 (2008)
Publisher : Institut Teknologi Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar

Abstract

The Hot Wire Cell PECVD method has been developed and successfully applied to grow the hydrogenated microcrystalline silicon ( µc-Si:H) thin films. The µc-Si:H thin films were grown on the 7059 corning glass at a filament temperature of 1000 oC. Ten percents silane (SiH4) gas diluted in hydrogen (H2) gas was used as gas source. In the hot wire cell PECVD method, reactant gases are decomposed as a result of reaction with a heated filament. The filament was placed parallelly with inlet gas system and outside of electrodes. The characterization results exhibited that the deposition rate increased from 1,45 Å/s to 1,56 Å/s with increasing the deposition pressure from 700 mTorr to 1100 mTorr. The SEM image and the XRD spectrum exhibited the transition of amorphous to microcrystalline silicon at an deposition pressure of 1000 mTorr. The transition of amorphous to microcrystalline was indicated by the reduction of amorphous parts and the appearance of peak diffraction at preferential crystal orientation. The dark and photo conductivities of the obtained µc-Si:H thin films was 1,2 x10-5 S cm-1 and 2,12 x 10-3 S cm-1, respectively.
Studi Sifat Termal Prekursor In(TMHD)3 untuk Menumbuhkan Lapisan Tipis In2O3 dengan Teknik MOCVD Horasdia Saragih; Hasniah Aliah; Euis Sustini; Sukirno Sukirno
Jurnal Matematika & Sains Vol 14, No 4 (2009)
Publisher : Institut Teknologi Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar

Abstract

The In2O3 thin films have been deposited on quartz substrate by MOCVD technique using In(TMHD)3 as a metal organic precurcor. Thermal properties of In(TMHD)3 have been investigated by analyses of TG-DTA curve and FTIR spectrum to determine the value of In2O3 deposition parameters. Based on TG-DTA curve and FTIR spectrum analyses, we find that: (1) melting point of In(TMHD)3 powder is 175 °C; (2) In(TMHD)3 powder starts to evaporate at 184 °C; (3) partial oxidation of In(TMHD)3 in Ar/atmosfer accur at 260 °C; and (4) dissosiation of TMHD ligand from indium metal element happened in the temperature range of 300 °C - 400 °C. Following these results, we maintaned growth condition for deposition of In2O3: the temperature of In(TMHD)3 bubbler (Tb) = 200 °C; the pressure of In(TMHD)3 bubbler (Pb) = 260 Torr; the rate of argon gas flow to carry out the vapor of In(TMHD)3 = 50 sccm; the rate of oxygen gas = 50 sccm; and temperature of substrate = 300 °C. In 120 minutes, the thickness of deposited In2O3 thin films, the rate of deposition and the roughness of film surface are about 0.2 µm, 1.6x10-3 µm/menit and 70 nm, respectively.
Co-Authors A. Suhandi Agus Subagio Amiruddin Supu Darsikin Darsikin Edi Supriyanto Edy Supriyanto Euis Sustini Fitri Suryani Arsyad Goib Wiranto Hasniah Aliah Heri Sutanto Hery Sutanto Horasdia Saragih I Wayan Sukarjita Ida Usman Iqbal Iqbal Jusman Jusman Khairurrijal Khairurrijal Lilik Hasanah M. Barmawi Maman Budiman Mikrajuddin Abdullah Mohamad Barmawi Mursal Mursal Pepen Arifin Ridwan Abdullah Sani Sugianto - Syamsu Syamsu Toto Winata