Vijay K. Arora, Vijay K.
Wilkes University

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Quantum Nanoengineering Nonequilibrium High-Electric-Field Transport for Signal Propagation Arora, Vijay K.
Proceeding of the Electrical Engineering Computer Science and Informatics Vol 2: EECSI 2015
Publisher : IAES Indonesia Section

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/eecsi.2.524

Abstract

Analog and digital signal processing in nanoelectronic devices in ultra-large scale integration (ULSI) is severely affected by the breakdown of Ohm’s law when applied voltage V exceeds the critical voltage Vc that is the thermal voltage scaled by length to mean free path (mfp) ratio. Nonequilibrium Arora’s distribution function (NEADF) is distinct from the Monte Carlo procedures and Nonequilibrium Green’s function (NEGF) in predicting the saturation velocity that is scattering independent and hence ballistic. The resistance rises with the applied dc electric field or voltage, both under direct and incremental conditions beyond the onset of sublinear behavior resulting in saturation. The surge increases with the applied dc voltage. This surge is shown to change the RC time constants, power consumption, and voltage and current division laws. Signal resistance is found to rise much faster than the direct resistance. Applications of high-field transport to silicon and carbon-based devices are included to confirm their validity. Quantum effects leading to quantum resistance are discussed. The magnetotransport in graphene reveals quantum plateaus in Hall conductivity. Carrier multiplication in high electric field as residing in a p-n junction is included to show the effect of bandgap narrowing.