Indonesian Journal of Electrical Engineering and Informatics (IJEEI)
Vol 7, No 3: September 2019

Analytical current Model for Dual Material Double Gate Junctionless Transistor

santosh chandrakant wagaj (Savitribai Phule Pune University, Pune)
shailaja chandrakant patil (savitribai phule pune university, pune)

Article Info

Publish Date
25 Sep 2019

Abstract

A Transistor model with bulk current is proposed in this article for long channel dual material double gate junction less transistor. The influence of different device parameters such as body thickness, channel length, oxide thickness, and the doping density on bulk current is investigated. The proposed model is validated and compared with simulated data using Cogenda TCAD. The model is designed by Poison’s equation and depletion approximation. Current driving capability of MOSFET is improved by dual material gate compare to single material gate.

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Journal Info
Indonesian Journal of Electrical Engineering and Informatics (IJEEI)
Website

Abbrev

IJEEI

Publisher

IAES Indonesia Section and Partners

Subject

Computer Science & IT Electrical & Electronics Engineering

Description

Indonesian Journal of Electrical Engineering and Informatics (IJEEI) is a peer reviewed International Journal in English published four issues per year (March, June, September and December). The aim of Indonesian Journal of Electrical Engineering and Informatics (IJEEI) is to publish high-quality ...