International Journal of Power Electronics and Drive Systems (IJPEDS)
Vol 6, No 2: June 2015

Modeling the Dependence of Power Diode on Temperature and Radiation

S.M. El-Ghanam (Ain-Shams Univ., Cairo)
A.M. Abd El-Maksood (Nuclear Materials Authority)
F.A.S. Soliman (Nuclear Materials Authority)

Article Info

Publish Date
01 Jun 2015

Abstract

A theoretical study had been carried out on the effect of radiation on the electrical properties of silicon power diodes. Computer program "PDRAD2013" was developed to solve the diode equations and to introduce the operating conditions and radiation effects upon its parameters. Temperature increase interrupts the electrical properties of the diode in the direction of drop voltage decrease across the p-n junction.. The model was analyzed under the influence of different radiation type (gamma-rays, neutrons, protons and electrons) with various dose levels and energies. The carriers diffusion length were seriously affected leading to a large increase in the forward voltage. These effects were found to be function of radiation type, fluence and energy.

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Journal Info
International Journal of Power Electronics and Drive Systems (IJPEDS)
Website

Abbrev

IJPEDS

Publisher

Institute of Advanced Engineering and Science

Subject

Control & Systems Engineering Electrical & Electronics Engineering

Description

International Journal of Power Electronics and Drive Systems (IJPEDS, ISSN: 2088-8694, a SCOPUS indexed Journal) is the official publication of the Institute of Advanced Engineering and Science (IAES). The scope of the journal includes all issues in the field of Power Electronics and drive systems. ...