Bulletin of Electrical Engineering and Informatics
Vol 5, No 1: March 2016

Leakage Immune 9T-SRAM Cell in Sub-threshold Region

Priya Gupta (Department of Electrical and Electronics Engineering Birla Institute of Technology and Science (BITS), Pilani, Rajasthan)
Anu Gupta (Department of Electrical and Electronics Engineering Birla Institute of Technology and Science (BITS), Pilani, Rajasthan)
Abhijit Asati (Department of Electrical and Electronics Engineering Birla Institute of Technology and Science (BITS), Pilani, Rajasthan)

Article Info

Publish Date
01 Mar 2016

Abstract

The paper presents a variability-aware modified 9T SRAM cell. In comparison to 6T SRAM cell the proposed  cell achieves 1.3× higher read-SNM and 1.77× higher write-SNM with 79.6% SINM (static current noise margin) distribution at the expense of 14.7× lower WTI (write trip current) at 0.4 V power supply voltage, while maintaining similar stability in hold mode. Thus, comparative analysis exhibits that the proposed design has a significant improvement, thereby achieving high cell stability at 45nm technology.

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Journal Info
Bulletin of Electrical Engineering and Informatics
Website

Abbrev

EEI

Publisher

Universitas Ahmad Dahlan

Subject

Electrical & Electronics Engineering

Description

Bulletin of Electrical Engineering and Informatics (Buletin Teknik Elektro dan Informatika) ISSN: 2089-3191, e-ISSN: 2302-9285 is open to submission from scholars and experts in the wide areas of electrical, electronics, instrumentation, control, telecommunication and computer engineering from the ...