Jurnal Matematika & Sains
Vol 10, No 1 (2005)

Fabrication and Characterization of Metal-Semiconductor-Metal n-GaN UV Photodetector by PA-MOCVD

Dadi Rusdiana ( Department of Physics, FPMIPA UPI, Bandung)
Sugianto Sugianto ( Department of Physics, FPMIPA UNNES, Semarang)
Andi Suhandi ( Department of Physics, FPMIPA UPI, Bandung)
Sukirno Sukirno ( Department of Physics, FMIPA ITB, Bandung)
Maman Budiman ( Department of Physics, FMIPA ITB, Bandung)
Mohamad Barmawi ( Department of Physics, FMIPA ITB, Bandung)

Article Info

Publish Date
07 Oct 2009

Abstract

Metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN epitaxial layers grown on (0001) sapphire by plasma-assisted metal organic chemical vapor deposition (PA-MOCVD) method. The photodetector with a thin GaN layer of 0.7 µm exhibited a low dark current with a saturation value of 1.469 x 10-14 A. The responsivity was 0.56 A/W at a wavelength of 320 nm under a bias voltage of 2.5 V.

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Journal Info
Jurnal Matematika & Sains
Website

Abbrev

Publisher

Institut Teknologi Bandung

Subject

Mathematics

Description

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