Jurnal Matematika & Sains
Vol 10, No 2 (2005)

GaN-based Double-hetero Film Grown and Fabricated on (0001) Sapphire Substrates by Plasma-assisted MOCVD

Heri Sutanto ( Departement of Physics, Diponegoro University, Semarang)
Edi Supriyanto ( Departement of Physics, UNEJ, Jember)
Maman Budiman ( Lab. for Electronic Material Physics, Departement of Physics, ITB)
Pepen Arifin ( Lab. for Electronic Material Physics, Departement of Physics, ITB)
Sukirno Sukirno ( Lab. for Electronic Material Physics, Departement of Physics, ITB)
Mohamad Barmawi ( Lab. for Electronic Material Physics, Departement of Physics, ITB)



Article Info

Publish Date
07 Oct 2009

Abstract

GaN-based double-hetero film has been grown on (0001) sapphire substrate by plasma-assisted MOCVD method. The structure of film was n-GaN/Al0.25Ga0.75N/In0.3Ga0.7N/Al0.25Ga0.75N/p-GaN. A photoluminescence (PL) peak originating from InGaN active layer has been observed at room temperature, which produced emission wavelength of 453 nm corresponded to energy of 2.74 eV. However, broadening of the peak caused by the crystalline quality of the InGaN epilayer is still poor, which is related with fluctuation of In rich regions.

Copyrights © 2005