<![CDATA[Analog and digital signal processing in nanoelectronic devices in ultra-large scale integration (ULSI) is severely affected by the breakdown of Ohmâs law when applied voltage V exceeds the critical voltage Vc that is the thermal voltage scaled by length to mean free path (mfp) ratio. Nonequilibrium Aroraâs distribution function (NEADF) is distinct from the Monte Carlo procedures and Nonequilibrium Greenâs function (NEGF) in predicting the saturation velocity that is scattering independent and hence ballistic. The resistance rises with the applied dc electric field or voltage, both under direct and incremental conditions beyond the onset of sublinear behavior resulting in saturation. The surge increases with the applied dc voltage. This surge is shown to change the RC time constants, power consumption, and voltage and current division laws. Signal resistance is found to rise much faster than the direct resistance. Applications of high-field transport to silicon and carbon-based devices are included to confirm their validity. Quantum effects leading to quantum resistance are discussed. The magnetotransport in graphene reveals quantum plateaus in Hall conductivity. Carrier multiplication in high electric field as residing in a p-n junction is included to show the effect of bandgap narrowing.]]>
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