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Edy Supriyanto
Jurusan Fisika, Fakultas Matematika Dan Ilmu Pengetahuan Alam, Universitas Jember
Agriculture, Biological Sciences & Forestry Astronomy Biochemistry, Genetics & Molecular Biology Chemistry Computer Science & IT Decision Sciences, Operations Research & Management Earth & Planetary Sciences Economics, Econometrics & Finance Education Energy Environmental Science Law, Crime, Criminology & Criminal Justice Materials Science & Nanotechnology Mathematics Physics Public Health Social Sciences Other

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Magnetoresistansi Divais Spintronika TiO2:Co/Si/TiO2:Co [Spintronics Magnetoresistance Device with TiO2:Co/Si/TiO2:Co] Edy Supriyanto; Agus Subagio; Hery Sutanto; Horasdia Saragih; Maman Budiman; Pepen Arifin; Sukirno Sukirno; Mohamad Barmawi
Jurnal Matematika & Sains Vol 12, No 1 (2007)
Publisher : Institut Teknologi Bandung

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Abstract

TiO2:Co thin films were grown on Si substrates by Metalorganic Chemical Vapor Deposition (MOCVD) technique using titanium(IV)isopropoxide and tris(2,2,6,6-tetramethyl-3,5-heptanedionato)cobalt (III), and oxygen gas. The films grown at temperature of 450 oC were crystalline having a rutile structure with (002) orientation. Based on Energy Dispersive Spectroscope (EDS) analysis, Co content in TiO2 was 1.83% and films exhibit ferromagnetic properties at room temperature. Hysteresis curves obtained from Vibrating Sample Magnetometer (VSM) measurement have coercive and saturation magnetic fields of 130 Oe and 2.1 emu/cm3, respectively. Application of TiO2:Co as injection material in spintronic device with TiO2:Co/Si/TiO2:Co structure was investigated. The effect of polarized spin injection (magnetoresistance phenomenon) was observed from the current-voltage characteristics of the device.
Pengaruh Temperatur Penumbuhan terhadap Struktur Kristal dan Morfologi Film Tipis TiO2:Eu yang Ditumbuhkan dengan Metode MOCVD [The Effect of Growth Temperature on the Crystall Structure and Morphology of the Thin Film TiO2:Eu Grown with MOCVD Method] Edy Supriyanto; Goib Wiranto; Hery Sutanto; Agus Subagio; Mikrajuddin Abdullah; Maman Budiman; Pepen Arifin; Sukirno Sukirno; Mohamad Barmawi
Jurnal Matematika & Sains Vol 12, No 2 (2007)
Publisher : Institut Teknologi Bandung

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Thin film of TiO2:Eu had been grown on an n-type Si(100) substrate using Metalorganic Chemical Vapor Deposition (MOCVD) method with titanium (IV) isopropoxide [Ti{OCH(CH3)2}4] 99.99% and europium nitrate [Eu(NO3)3.6H2O] 99.99% as the metal organic precursors. The tetrahydrofuran (THF) was used as a solvent for the precursor. X-ray Diffraction (XRD) analysis showed that the TiO2:Eu thin film grown at temperature of 450 οC had crystal planes of rutile (200), rutile (002) and anatase (211), whereas film grown at 500 οC resulted in a crystal plane of rutile (002) with columnar grain and surface morphology relatively smooth. On the other hand, film grown at temperature of 550 οC has rutile (200) and rutile (002) planes. The surface morphology of thin films TiO2:Eu was affected by Eu atom concentration. The roughness of surface morphology increased with increasing Eu content and therefore the grains became larger. It can be concluded that the crystal structure and surface morphology properties of the films depended significantly on the substrate temperature.
PENGARUH KANDUNGAN OKSIGEN FILM TIPIS TiO2-Co YANG DITUMBUHKAN DENGAN TEKNIK MOCVD TERHADAP RESPON FEROMAGNETIKNYA Horasdia Saragih; Edy Supriyanto; Mujamilah Mujamilah; Pepen Arifin; Mohamad Barmawi
Jurnal Sains Materi Indonesia EDISI KHUSUS: OKTOBER 2006
Publisher : Center for Science & Technology of Advanced Materials - National Nuclear Energy Agency

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (322.102 KB) | DOI: 10.17146/jusami.2006.0.0.5177

Abstract

PENGARUH KANDUNGAN OKSIGEN FILM TIPIS TiO2-Co YANG DITUMBUHKAN DENGAN TEKNIK MOCVD TERHADAP RESPON FEROMAGNETIKNYA. Penumbuhan film tipis TiO2-Co telah dilakukan di atas substrat Si dengan teknik MOCVD. Sifat feromagnetiknya diinvestigasi pada suhu ruang. Konsentrasi kandungan oksigen pada matriks kisi kristal film direkayasa melalui proses penganilan. Film tipis TiO2-Co sebelum dianil menunjukkan sifat feromagnetik pada suhu ruang. Karakteristik magnetik, Ms dan Hc bervariasi untuk setiap film. Nilai Ms bertambah dengan bertambahnya konsentrasi Co. Namun nilai momen magnetik rata-rata per atom Co menurun pada saat konsentrasi Co pada film bertambah. Film tipis TiO2.Co dianil pada tekanan 10-3 Torr dan suhu 450 oC selama 120 menit, dan menunjukkan suatu pengurangan konsentrasi O. Pengurangan konsentrasi O meningkatkan nilai Ms film. Sesuai dengan model teori yang diusulkan oleh peneliti lain, fenomena ini diduga disebabkan oleh hadirnya kekosongan O di sekitar ion Co pada matriks kisi TiO2-Co. Seluruh film tipis hasil penumbuhan memiliki karakter magnetik lembut sebagaimana diharapkan untuk aplikasi spintronika.
STUDI PENGARUH KONSENTRASI AL PADA STRUKTUR KRISTAL DAN MORFOLOGI FILM TIPIS AlxGa1-xN/Si(111) YANG DITUMBUHKAN DENGAN TEKNIK PA-MOCVD Heri Sutanto; Agus Subagio; Edy Supriyanto; Pepen Arifin; Sukirno Sukirno; Maman Budiman; Moehamad Barmawi
Jurnal Sains Materi Indonesia EDISI KHUSUS: OKTOBER 2006
Publisher : Center for Science & Technology of Advanced Materials - National Nuclear Energy Agency

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (292.957 KB) | DOI: 10.17146/jusami.2006.0.0.5183

Abstract

STUDI PENGARUH KONSENTRASI AL PADA STRUKTUR KRISTAL DAN MORFOLOGI FILM TIPIS AlxGa1-xN/Si(111) YANG DITUMBUHKAN DENGAN TEKNIK PA-MOCVD. Film tipis AlxGa1-xN telah ditumbuhkan di atas substrat Si tipe-p dengan menggunakan teknik PA-MOCVD. Film tipis AlxGa1-xN ditumbuhkan dengan parameter-parameter: suhu substrat, laju alir N2, TMGa dan TMAl berturut-turut sebesar 700 oC; 90 sccm; 0,1 sccm dan 0,01sccm hingga 0,04 sccm. Film polikristal AlxGa1-xN yang ditumbuhkan mempunyai struktur heksagonal dengan bidang difraksi dominan (1010) dan (1011) hingga konsentrasi Al sebesar 6,78%. Diperoleh nilai kekasaran permukaan film dari pengukuran SPM pada range 11,44 nm sampai dengan 27,20 nm. Morfologi permukaan film semakin halus dengan peningkatan konsentrasi Al pada film. Penurunan nilai konstanta kisi hasil pengujian XRD terjadi karena kekosongan nitrogen pada film. Peningkatan konsentrasi Al pada film menyebabkan penurunan laju penumbuhan film tipis AlxGa1-xN yang terbentuk.
FABRIKASI FILM TIPIS SEMIKONDUKTOR FEROMAGNETIK TiO2-Co DENGAN TEKNIK MOCVD DAN PENGAMATAN MAGNETORESISTANSI Edy Supriyanto; Horasdia Saragih; Agus Subagio; Maman Budiman; Pepen Arifin; Moehammad Barmawi; Sukirno Sukirno
Jurnal Sains Materi Indonesia EDISI KHUSUS: OKTOBER 2006
Publisher : Center for Science & Technology of Advanced Materials - National Nuclear Energy Agency

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (207.747 KB) | DOI: 10.17146/jusami.2006.0.0.5180

Abstract

FABRIKASI FILM TIPIS SEMIKONDUKTOR FEROMAGNETIK TiO2-Co DENGAN TEKNIK MOCVD DAN PENGAMATAN MAGNETORESISTANSI. Film tipis TiO2-Co telah berhasil ditumbuhkan di atas subtrat Si dengan teknik MOCVD. Film tipis TiO2-Co bersifat feromagnetik pada suhu ruang, dan memiliki respon magnetik lunak (soft magnetic). Penggunaannya sebagai material injektor pada divais spintronika berstruktur TiO2-Co/Si/TiO2-Co, diinvestigasi. Karakteristik arus-tegangannya, tanpa dan dengan medan magnetik luar, dianalisa. Teramati adanya pengaruh magnetik terhadap resistansi divais yang disebut sebagai magnetoresistansi. Magetoresistansi diperoleh bergantung pada besarnya tegangan bias yang diberikan pada divais. Penambahan tegangan ke suatu nilai tertentu dapat menghilangkan efek magnetoresistansi.
Studi Resonansi Feromagnetik BaFe12O19 Menggunakan Simulasi Mikromagnetik Angga Wicaksono; Lutfi Rohman; Edy Supriyanto
BERKALA SAINSTEK Vol 6 No 1 (2018)
Publisher : Universitas Jember

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.19184/bst.v6i1.7771

Abstract

Barium Hexaferit (BaFe12O19) adalah magnet keramik golongan ferit. Ferit diaplikasikan sebagai magnet permanen dan mempunyai struktur hexagonal close-pakced (HCP). Kurva histerisis magnet permanen jenis ini memiliki koersivitas yang relatif tidak besar sehingga senyawa tersebut juga berpeluang cukup baik untuk diaplikasikan sebagai media penyimpanan data (magnetic recording) berupa patterned media. Penelitian ini mengkaji sifat-sifat magnetik bahan BaM berbentuk hexagonal terhadap kurva histerisis dan sifat resonansi feromagnetik pada berbagai variasi ukuran (meliputi : ketebalan dan diagonal hexagonal). Running simulasi mikromagnetik dilakukan untuk mendapatkan kurva histerisis dan frekuensi resonansi bahan BaM. Frekuensi resonansi meningkat (heksagonal diagonal tetap pada 12 nm) dengan bertambahnya ketebalan bahan BaM (misal pada ketebalan 24 nm diperoleh frekuensi resonansi sebesar 21,7 GHz dan pada ketebalan 36 nm diperoleh frekuensi resonansi sebesar 22,4 GHz), hal ini dikarenakan dengan bertambahnya ukuran ketebalan bahan BaM posisi spin terlihat sangat teratur. Sedangkan hubungan frekuensi resonansi dengan diagonal hexagonal yaitu kebalikannya.Kata Kunci: BaFe12O19, Simulasi mikromagnetik, Frekuensi resonansi
Simulation of Solar Cell Diode I-V Characteristics Using Finite Element Methode: Influence of p- Layer Thickness Greta Andika Fatma; Endhah Purwandari; Edy Supriyanto
UNEJ e-Proceeding 2016: Proceeding The 1st International Basic Science Conference
Publisher : UPT Penerbitan Universitas Jember

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Abstract

Characteristic of I-V is a key parameter of describing the performance of solar cell diode, specially for Silicon material. One of the effort to get its higher performance can be conducted by investigating the effect of the thickness of p-layer. The thickness becomes important factor because of its function as windows layer, which will determine the number of generation factor, appropiate to the charge carrier producing. Here, we explore them by using computer program, applying finite element methode as the numerical simulation. The geometry of the diode was simulated in one dimensional structure, where the thickness of p-layer varied from 0,7 μm to 1,5 μm, while the n-layer was fixed at a thickness of 3,5 μm. The result showed that the optimum parameters has come out to achieve the best performance of this type of solar cell.
Simulation of I-V Characteristics of Si Diode at Difference Operating Temperature:Effect of Ionized Impurity Scattering Siti Lailatul Arofah; Endhah Purwandari; Edy Supriyanto
UNEJ e-Proceeding 2016: Proceeding The 1st International Basic Science Conference
Publisher : UPT Penerbitan Universitas Jember

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Abstract

The usage quality of Si Diode was influenced by the operating temperature. The increment of temperature caused the increased number of ionized impurities. Coulomb interaction between the impurities and the local charge carrier caused the scattering on the impurity. Furthermore, this scattering causes changes in the velocity and mobility of charge carriers. This gives an effect on the distribution of charge carriers, causing changes in the diffusion current density. In this paper, we perform the I-V characteristic of Si diode, simulated in two dimensional structure. Several temperatures (200K-473K) and also the charge carrier mobility were observed as the input parameter of the equation modelled. The simulation results show that the value of current density diffusion of Si Diodes was maximum at temperature of 200K and decreasing at a higher temperature of 473K.
The thermal annealing effect on Crystal Structure and Morphology of Titanium Dioxide (TiO2) powder Edy Supriyanto; Ashanal Holikin; Suwardiyanto Suwardiyanto
Jurnal ILMU DASAR Vol 15 No 1 (2014)
Publisher : Fakultas Matematika dan Ilmu Pengetahuan Alam Universitas Jember

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (783.746 KB) | DOI: 10.19184/jid.v15i1.638

Abstract

In this research, crystal structure and morphology of TiO2 (powder) has been observed. TiO2 (powder) was heated by furnace unit at temperature 200 °C - 400 °C to obtain the relation of temperature influences to crystallty and morphology of TiO2. Structural characterization has been done using XRD whereas morphology using Scanning Electron Microscope (SEM) method. The result of this research showed that form of the TIO2 structure was polycrystalline in which mostly dominated by crystal structure (101). Scherrer method used to obtain information that at temperature 300oC, TiO2 has a real small particle size less than 10 nm and large pore size to serve the purpose of photocatalyst material. Keywords : Crystal structure,crystalline size, photocatalyst, morphology, SEM, TiO2.  
Effect of Temperature on The Electron Concentration of Crystalline GaAs Semiconductor Based on The p-n Junction Due to Deformation Potential Scattering Nova Alviati; Samsiatun Hoiriyah; Misto Misto; Edy Supriyanto
Computational And Experimental Research In Materials And Renewable Energy Vol 2 No 1 (2019): May
Publisher : Physics Department, Faculty of Mathematics and Natural Sciences, University of Jember

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.19184/cerimre.v2i1.20560

Abstract

The electrical characteristics of semiconductor materials can be predicted based on the transport of charge carriers within the material. Under room temperature, the electrical properties of semiconductor materials can be exploited by knowing the value of their electron mobility to predict the number of electrons that experience the transport mechanism. When the material is observed under room temperature, the interaction of electrons and the lattice atoms' vibrations result in deformation potential scattering. This can stimulate electron mobility changes, which can affect the number of free electrons in semiconductor materials. The research results presented in this paper simulate the number of electrons that change due to electrons' mobility in the GaAs crystal. This material undergoes potential scattering deformation due to the interaction between electrons and phonons at temperature (40-100) K. The simulation is carried out by modeling the GaAs semiconductor material in the form of a p-n junction. The temperature variation given to the material shows a significant change in concentration in the junction area. In contrast, in the contact area's vicinity with the external circuit, both the p-layer and the n-layer show relatively constant electron concentrations.
Co-Authors Agus Subagio Agus Subagio Ahmadi Ahmadi Angga Wicaksono Ari Dwi Nugraheni Aryo Fajar Sunartomo Ashanal Holikin Dwi Sabda Budi Prasetya Edy Wibowo Edy Wihardjo Eka Ardhianto Elyda Akhya Afida Misrohmasari Endang Lestariningsih Endhah Purwandari Goib Wiranto Greta Andika Fatma Habibi Habibi Habibi, Baiq Azmi Sukroyanti, Lovy Herayanti, Wirawan Putrayadi, dan Bq. Rina Amalia Safitri Hari Murti Harsojo Harsojo Heri Sutanto Hery Sutanto Horasdia Saragih Ilma Eka Nur Rokhmawati Imam Rofi’i Kusumayanti, Dina Dyah Lutfi Rohman Maman Budiman Maman Budiman Maman Budiman Mikrajuddin Abdullah Misto Misto Misto Misto Mochamad Edoward Ramadhan Moehamad Barmawi Moehammad Barmawi Mohamad Barmawi Mohamad Barmawi Muhammad Iqbal Mujamilah Mujamilah Nova Alviati Pepen Arifin Pepen Arifin Pepen Arifin Pepen Arifin Samsiatun Hoiriyah Siswanto Siswanto Siti Lailatul Arofah Subekti, Sri Sukirno Sukirno Sukirno Sukirno Sukirno Sukirno Sutisna Sutisna Sutrisno Sutrisno Suwardiyanto Suwardiyanto Tri Mulyono Widiyanto Handoko Widiyanto Tri Handoko