Makara Journal of Technology
Vol. 7, No. 1

Study About High Influence Doping to Base Resistance and Bandgap Narrowing at Si/Si1-xGex/Si Heterojunction Bipolar Transistor

Fadhol, Achmad (Unknown)

Article Info

Publish Date
01 Apr 2003

Abstract

Study About High Influence Doping to Base Resistance and Bandgap Narrowing at Si/Si1-xGex/Si Heterojunction Bipolar Transistor. Heterojunction is a link formed bedween two semiconductor materials and differend bandgap which has thinness under 50nm and grow the mixture of plate SiGe as bases. The link is an abrupt link or graded one. In this research learnt formulation of doping concentration influence to basis resistance and bandgap narrowing through Si/Si1-xGex/Si Heterojunction Bipolar Transistor with abrupt emitter-basis link, besides taking care to mobility and basis wide to basis resistance, it is also influence of mole fraction to bandgap power. From the result shows that doping concentration addition of NB=5.1018 cm-3 to NB=5.1020 cm-3 in basis can decrease resistance basis value about 3.6%, increase bandgap narrowing about 0.126, and increase collector current density for about 1.36 times to Ge 24%.

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Journal Info
Makara Journal of Technology
Website

Abbrev

publication:mjt

Publisher

Universitas Indonesia

Subject

Chemical Engineering, Chemistry & Bioengineering Civil Engineering, Building, Construction & Architecture Electrical & Electronics Engineering Engineering Materials Science & Nanotechnology Mechanical Engineering

Description

MAKARA Journal of Technology is a peer-reviewed multidisciplinary journal committed to the advancement of scholarly knowledge and research findings of the several branches of Engineering and Technology. The Journal publishes new results, original articles, reviews, and research notes whose content ...