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Contact Name
Asril Pramutadi Andi Mustari
Contact Email
IJPhysicsITB@gmail.com
Phone
+6222-2500834
Journal Mail Official
ijp-journal@itb.ac.id
Editorial Address
Prodi Sarjana dan Pascasarjana Fisika Fakultas Matematika dan Ilmu Pengetahuan Alam Institut Teknologi Bandung Gedung Fisika, Jalan Ganesa 10, Bandung 40132, INDONESIA
Location
Kota bandung,
Jawa barat
INDONESIA
Indonesian Journal of Physics (IJP)
ISSN : 23018151     EISSN : 29870828     DOI : https://doi.org/10.5614/itb.ijp
Indonesian Journal of Physics welcomes full research articles in the area of Sciences and Engineering from the following subject areas: Physics, Mathematics, Astronomy, Mechanical Engineering, Civil and Structural Engineering, Chemical Engineering, Electrical Engineering, Geotechnical Engineering, Engineering Science, Environmental Science, Materials Science, and Earth-Surface Processes. Authors are invited to submit articles that have not been published previously and are not under consideration elsewhere.
Articles 6 Documents
Search results for , issue "Vol 14 No 2 (2003): Vol. 14 No.2, April 2003" : 6 Documents clear
Pengaruh Perlakuan Implantasi Hidrogen terhadap Sifat Struktur Lapisan Tipis Amorf Silikon Karbon (a-SiC:H) Hasil Deposisi Metode DC Sputtering Rosari Saleh; Lusitra Munisa
Indonesian Journal of Physics Vol 14 No 2 (2003): Vol. 14 No.2, April 2003
Publisher : Institut Teknologi Bandung

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Abstract

Infrared absorption measurement of hydrogenated amorphous silicon carbon films (a-SiC:H) deposited by dc sputtering method have been performed for prior- and after hydrogen implantation. The films were deposited by silicon target in argon and methane gas mixtures. The results suggest that both 720 and 780 cm-1 absorption are due to Si-C stretching mode and the transition of the absorption from 2000 to 2100 cm-1 as the methane flow rate increase is not due to a change in carbon concentration, but rather to the formation of voids as supported by hydrogen effusion experiment results.
Relasi Gap Optis dengan Struktur Ikatan Lapisan Tipis Amorf Silikon Karbon (a-SiC:H) Hasil Deposisi Metode DC Sputtering Rosari Saleh; Lusitra Munisa
Indonesian Journal of Physics Vol 14 No 2 (2003): Vol. 14 No.2, April 2003
Publisher : Institut Teknologi Bandung

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Abstract

The influence of hydrogen and carbon incorporation on the optical gap of amorphous silicon carbon (a-SiC:H) films deposited by dc sputtering methods were observed and analysed using ultra violet-visible (UV-VIS) and infrared spectroscopy. Hydrogen content NH and carbon concentration NC in the films increases considerably with increasing methane flow rate. Both hydrogen and carbon content induces the widening of the optical gap through its linear relation with Si-H, C-H and Si-C vibration absorption. For low methane flow rate, the widening of optical gap is mainly due to an increase of hydrogen content. The incorporation of carbon led to increase the optical gap for higher methane flow rate.
Radical Formation in X-Irradiated Amino Acids and Its Relation to The Crystal Structures Frida U. Ermawati
Indonesian Journal of Physics Vol 14 No 2 (2003): Vol. 14 No.2, April 2003
Publisher : Institut Teknologi Bandung

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Abstract

Electron spin resonance (ESR) spectra from L and DL optical isomers of six amino acids have been observed after x-irradiation at 77K. A Varian E-12 spectrometer equipped with a rectangular parallelepiped microwave cavity to produce TE102 mode was utilized for this purpose. It was obtained that for most of the acids, spectra from the L and DL isomers are different at corresponding temperature in the range from 77 to 300K. These differences are attributed to differences in crystal structure, especially to the conformation of the amino group with respect to the adjacent carboxyl group of a system.
Comparative Study on Magnetic Characterization of Iron Sand from Several Locations in Central Java Agus Yulianto; Satria Bijaksana; Waloejo Loeksmanto
Indonesian Journal of Physics Vol 14 No 2 (2003): Vol. 14 No.2, April 2003
Publisher : Institut Teknologi Bandung

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Abstract

Iron sand is a natural resource that is widely distributed in a number of places in Java. Although it is widely known, iron sand has not been utilized and exploited fully. To explore the possible utilizations of iron sand, we have carried out a survey on magnetic characters of iron sand from several locations in the north coast as well as in the south coast of Central Java. Samples in the form of raw iron sand were directly from the beach and were sun dried to reduce their water content before being taken to the laboratory. The mineralogy of the sample was observed using optical microscope as well as by X-ray diffraction method. Magnetic characterization was carried out by the measuring the magnetic susceptibility as well as the IRM (isothermal remanent magnetization) and its decay against demagnetization. The results show that the main magnetic mineral in iron sand from all location is magnetite (Fe3O4). Other magnetic minerals such as hematite and ilmenite are also present in the iron sand. The mass susceptibility varies from 1.01 × 10-4 m3/kg for sample from Munggangharjo to 3.34 × 10-4 m3/kg for sample from Bayuran. IRM analysis shows that the magnetite content varies considerably from one location to another one. Magnetite in the iron sand taken from locations in the northern part of Java tends to have smaller grain size compared to those from the southern part of Java.
Pengaruh Kekeruhan Atmosfir Terhadap Kesetimbangan Radiasi Matahari Tuti Budiwati; Rukmi Hidayati; Iis Sofiati
Indonesian Journal of Physics Vol 14 No 2 (2003): Vol. 14 No.2, April 2003
Publisher : Institut Teknologi Bandung

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Abstract

The solar radiation intensity of 500 nm wavelength is measured by Eko-Sun photometer model MS-120 on clear days. The magnitude of atmospheric turbidity coefficient plays important role in increasing or decreasing temperature near earth’s surface. The atmospheric turbidity coefficients at wavelength of 500 nm in Bandung had range from 0.25 to 1.20 during dry season from June to October from 1996 to 1998. The decrease of atmospheric turbidity coefficient value of 0.015 was based on different value of atmospheric turbidity coefficient from 0.461 to 0.446 in 1996 and 1998 which resulted in increasing temperature near earth’s surface about 0.49oC.
Optimalisasi Struktur Sel Surya GaAs Sambungan p-n dengan Lapisan Antirefleksi yang tergandeng dengan Lapisan Window AlGaAs Andi Suhandi; pepen Arifin
Indonesian Journal of Physics Vol 14 No 2 (2003): Vol. 14 No.2, April 2003
Publisher : Institut Teknologi Bandung

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Abstract

Telah dilakukan proses optimalisasi struktur sel surya GaAs sambungan p-n melalui perhitungan secara analitik, dengan variabel perhitungan meliputi makeup divais seperti ketebalan lapisan-lapisan semikonduktor dan konsentrasi doping ketakmurnian, serta parameter parameter divais seperti waktu hidup pembawa muatan minoritas, koefis'en difusi pembawa muatan minoritas, dan laju rekombinasi permukaan. Parameter-parameter divais telah diambil dari data-data hasil eksperimen, hasil simulasi, maupun dari hasil kajian teoretik. Kehadiran lapisan anti refleksi yang tergandeng dengan lapisan window AlGaAs dalam perhitungan ini diwakili dengan nilai transmisivitasnya. Kriteria struktur sel surya optimum ditentukan berdasarkan tingkat pencapaian rapat photocurrent yang optimum.Hasil perhitungan menunjukkan bahwa kehadiran lapisan anti refleksi yang tergandeng dengan lapisan window AIGaAs dapat meningkatkan rapat photocurrent yang dapat dibangkitkan sel surya GaAs secara signifkan. Dibanding dengan bahan lapisan anti refleksi lain, sistem MgFWnS dapat membangkitkan rapat photocurrent paling besar jika dipasang pada sel surya GaAs. Struktur optimum sel surya GaAs terjadi ketika bahan lapisan anti refleksi terbuat dari MgFyZnS, ketebalan lapisan window (AIGaAs) sebesar 20 nm, ketebalan lapisan tipe-p dan tipe-n berturut-turut sekitar 1,5 fan dan 3,5 fan, serta konsentrasi doping akseptor di tipep (N,4) dan konsentrasi doping donor di tipe-n (ND) berturut-turut sekitar 1 x 1018 cm-j, dan 1 x 10" cm-3 . Dengan struktur seperti itu dapat dibangkitkan rapat photocurrent optimum sekitar 46,5 mAlcm2 .

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