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Contact Name
Asril Pramutadi Andi Mustari
Contact Email
IJPhysicsITB@gmail.com
Phone
+6222-2500834
Journal Mail Official
ijp-journal@itb.ac.id
Editorial Address
Prodi Sarjana dan Pascasarjana Fisika Fakultas Matematika dan Ilmu Pengetahuan Alam Institut Teknologi Bandung Gedung Fisika, Jalan Ganesa 10, Bandung 40132, INDONESIA
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Jawa barat
INDONESIA
Indonesian Journal of Physics (IJP)
ISSN : 23018151     EISSN : 29870828     DOI : https://doi.org/10.5614/itb.ijp
Indonesian Journal of Physics welcomes full research articles in the area of Sciences and Engineering from the following subject areas: Physics, Mathematics, Astronomy, Mechanical Engineering, Civil and Structural Engineering, Chemical Engineering, Electrical Engineering, Geotechnical Engineering, Engineering Science, Environmental Science, Materials Science, and Earth-Surface Processes. Authors are invited to submit articles that have not been published previously and are not under consideration elsewhere.
Articles 5 Documents
Search results for , issue "Vol 15 No 2 (2004): Vol. 15 No.2, April 2004" : 5 Documents clear
20-line multi-wavelength laser source at 1600nm region with Brilloun/erbium fiber laser S. W. Harun; H. Ahmad
Indonesian Journal of Physics Vol 15 No 2 (2004): Vol. 15 No.2, April 2004
Publisher : Institut Teknologi Bandung

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Abstract

The operation of the Brillouin/erbium fiber laser (BEFL) in the long wavelength band (L-band) is experimentally demonstrated. The Stokes frequency is shifted 10GHz from its Brillouin pump with a tunability from 1598-1612nm for the single wavelength BEFL. Multiple wavelength generation in the BEFL is realised by adding two 3-dB couplers, which are joined in a reverse-S arrangement to take a portion of the generated BEFL signal and re-inject it into the SMF to seed a cascaded BEFL line in the same direction as the first BEFL line. 20 lines including the anti-Stokes are obtained with a maximum Brillouin pump and 980-nm pump power of 8.8mW and 92mW, respectively. The L-band BEFL has the potential to be used in future wavelength division multiplexing (WDM) communication system.
Application of a-Si:H in p-i-n Solar Cell by VHF-PECVD Method I. Usman; A. Supu; Mursal Mursal; Sukirno, T. Winata; M. Barmawi
Indonesian Journal of Physics Vol 15 No 2 (2004): Vol. 15 No.2, April 2004
Publisher : Institut Teknologi Bandung

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Abstract

The a-Si:H p-i-n solar cells have been deposited on Corning glass coated with Transparent Conductive Oxide (TCO) by employing the VHF-PECVD method at the substrate temperature of 275 oC. The 10% SiH4 gas diluted in H2 was used as a gas source and the doping process was done by gas admixture of B2H6 and PH3 for p- and n-layer respectively. A careful mono-layer optimization such as power discharge and deposition pressure was done to obtain the best a-Si:H film quality. The deposition rate (rd), optical bandgap (Eopt), and photoconductivity (σph) of i-layer was obtained are 2.04 Å/s, 1.69 eV, and 9.23 x 10-5 S/cm, respectively. Two different solar cells were then fabricated by applying the active layer (i-layer) of 4400Å and 5500Å thickness, while the thicknesses of p- and n-layer were fixed to 150Å and 300Å respectively. The current-voltage measurement under 34 mW/cm2 light illumination shows higher value of VOC, ISC, and efficiency which are of 0.77 Volt, 15.92 mA/cm2, and 9.39%, respectively for the solar cell with thicker i-layer of 5500Å.
Study of Structural and Electrical Properties of Gallium Arsenide Thin Film Grown by MOCVD Using Trisdimethylamino Arsenic I. Hamidah; N. Yuningsih; P. Arifin; M. Budiman; M. Barmawi
Indonesian Journal of Physics Vol 15 No 2 (2004): Vol. 15 No.2, April 2004
Publisher : Institut Teknologi Bandung

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Abstract

Trisdimethylamino Arsenic (TDMAAs) and trimethyl gallium (TMGa) have been successfully used as Arsenic (As) and gallium (Ga) precursors, respectively, for GaAs epitaxial layers growth by metal organic chemical vapor deposition (MOCVD) method. TDMAAs is used as As precursor due to its excellent properties, i.e. nontoxic, low carbon incorporation, low vapor pressure, and no need for precracking. The surface morphology of GaAs is observed by scanning electron microscopy (SEM) method and GaAs atomic fraction is measured by energy dispersive X-ray (EDX) method. From the examination of electrical properties by the standard Hall-van der Pauw measurement, it can be concluded that the film conductivity for all layers are p-type. GaAs with V/III ratio of 4.5 has a growth rate of 0.94 µm/h, mobility of 395 cm2/Vs and room temperature hole concentration of 3.44 x 1015 cm-3
Growth of Amorphous Silicon Germanium (a-SiGe:H) Alloys Thin Film by PECVD Mursal Mursal; A. Supu; I. Usman; T. Winata; Sukirno Sukirno; M. Barmawi
Indonesian Journal of Physics Vol 15 No 2 (2004): Vol. 15 No.2, April 2004
Publisher : Institut Teknologi Bandung

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Abstract

Hydrogenated amorphous silicon-germanium (a-SiGe:H) alloys thin films had been grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) method. The films were grown on corning glass # 7059 from a gas mixture of silane (SiH4) and germane (GeH4) 10% diluted in hydrogen (H2). UV-VIS-NIR spectra analysis of a-SiGe:H alloys thin films showed that the sub-bandgap absorption α(hν) spectra of a-SiGe:H alloys shift to lower photon energy with increasing in GeH4 flow rate. The optical bandgap of a-SiGe:H alloy decreased non linearly from 0.94 eV – 0.75 eV with increasing in GeH4 flow rate from 2.5 sccm – 25 sccm. The photo-sensitivity (σph/σd) of a-SiGe:H thin films were improved as the optical bandgap (Eopt) increased.
Optimization of small and very small long life Pb-Bi Cooled Fast reactors Zaki Su’ud
Indonesian Journal of Physics Vol 15 No 2 (2004): Vol. 15 No.2, April 2004
Publisher : Institut Teknologi Bandung

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Abstract

In this paper optimization of small and very small nuclear power plant is discussed. The reactor is subjected to fulfill fourth generation nuclear power plant criteria. For very small nuclear power reactor, constraining the reactivity swing to be smaller than one dollar during operation usually result in small power density, relatively large core and low burnup level. One key concept in the present discussion is by the use of tight lattice and large fuel diameter so that the fuel volume fraction becomes large and pressure drop is still reasonable. The central part of the core is filled by fertile material for minimization of excess reactivity during reactor operation. By using this concept small but effective nucclear power plant can be designed. The core can achieve burnup of about 13 % heavy metal and the height and diameter of the active core is much smaller than 1 meter.

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