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Contact Name
Asril Pramutadi Andi Mustari
Contact Email
IJPhysicsITB@gmail.com
Phone
+6222-2500834
Journal Mail Official
ijp-journal@itb.ac.id
Editorial Address
Prodi Sarjana dan Pascasarjana Fisika Fakultas Matematika dan Ilmu Pengetahuan Alam Institut Teknologi Bandung Gedung Fisika, Jalan Ganesa 10, Bandung 40132, INDONESIA
Location
Kota bandung,
Jawa barat
INDONESIA
Indonesian Journal of Physics (IJP)
ISSN : 23018151     EISSN : 29870828     DOI : https://doi.org/10.5614/itb.ijp
Indonesian Journal of Physics welcomes full research articles in the area of Sciences and Engineering from the following subject areas: Physics, Mathematics, Astronomy, Mechanical Engineering, Civil and Structural Engineering, Chemical Engineering, Electrical Engineering, Geotechnical Engineering, Engineering Science, Environmental Science, Materials Science, and Earth-Surface Processes. Authors are invited to submit articles that have not been published previously and are not under consideration elsewhere.
Articles 5 Documents
Search results for , issue "Vol 19 No 4 (2008): Vol. 19 No. 4, October 2008" : 5 Documents clear
Evaluation of Pb-Bi-Water Direct Contact Boiling Flow in a Vertical Circular Channel using Drift-Flux Model Novitrian Novitrian; Minoru Takahashi
Indonesian Journal of Physics Vol 19 No 4 (2008): Vol. 19 No. 4, October 2008
Publisher : Institut Teknologi Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (187.308 KB) | DOI: 10.5614/itb.ijp.2008.19.4.1

Abstract

The characteristics of Pb-Bi-water boiling two-phase flow were investigated in a vertical circular channel. Water was injected into Pb-Bi to circulate Pb-Bi in a loop with an effect of steam lift pump. Pb-Bi flow rates were measured and analytically estimated using balance condition between buoyancy force and pressure losses. The drift-flux model was used to determine void fraction with assumption that bubble sizes were dependent on the fluid surface tension and density ratio of Pb-Bi to steam and water mixture. The result of analysis shows that the deviation from the experimental data was less than 20%.
Marine Seismic Tomography for Detecting Fracture and Void of Subsurface Seabed : a Theoretical Framework Development and Application of Wide-Band Fresnel Tomography Bagus E. B. Nurhandoko; Fajril Ambia; Kaswandhi Triyoso; M. Thurisina Choliq; Mahatman L. Budi; Asep Suhendi; Wahyu E. Abdianto
Indonesian Journal of Physics Vol 19 No 4 (2008): Vol. 19 No. 4, October 2008
Publisher : Institut Teknologi Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (965.921 KB) | DOI: 10.5614/itb.ijp.2008.19.4.2

Abstract

Fracture as well as void can generate unstable structure in offshore building. We use seismic tomography based on scattering wave instead of conventional raypath seismic tomography. Conventional raypath tomography usually needs dense source-receiver configuration as well as wide-angle measurement. Therefore, it will be high cost in field data acquisition. We propose scattering wavepath tomography by means of Fresnel interpolated wavepath (FIW) wide-band inversion. FIW is an interpolation between imaginary part of Rhytov scattering wavepath and raypath. Then, FIW is combined with wide band inversion procedure to handle sparseness configuration of measurement. By this method, smooth constraint is implemented more naturally by based on wave's spectrum. In this paper, we showed some applications of Wide-band inversion of FIW tomography in imaging fracture and void in marine carbonate sea bed.
Some Gauge Related Aspects in Gauge Theory Triyanta Triyanta
Indonesian Journal of Physics Vol 19 No 4 (2008): Vol. 19 No. 4, October 2008
Publisher : Institut Teknologi Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (111.654 KB) | DOI: 10.5614/itb.ijp.2008.19.4.3

Abstract

Gauge freedom is one important property of gauge theory. It enables one to choose gauge fields that fulfill a certain condition for conveniences. Thus, gauge freedom leads more fruitful and interesting development of gauge theory. In this paper we will discuss some gauge condition related aspects where the generalized gauge is taken into consideration. More attention will be given to the FS gauge.
Determination of Energy Dependence Level Density Parameter and its Application in Fission Products Calculation of Pu-238 Abdul Waris; Rizal Kurniadi; Yuda S. Perkasa; Suwoto Suwoto
Indonesian Journal of Physics Vol 19 No 4 (2008): Vol. 19 No. 4, October 2008
Publisher : Institut Teknologi Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (317.78 KB) | DOI: 10.5614/itb.ijp.2008.19.4.4

Abstract

The energy dependence of level density parameter has been calculated using extended wood-saxon potential. The extended version of potential has deep well parameter that is independent to the nucleon density. The potential is pure central interaction. Although the potential is different from mean field theory, it gives the better result than that of the reference input parameter library-2 (RIPL-2). The application of the level density parameter results in small discrepancies from ENDF results. This method has been adopted in example for calculating fission products of Pu-238.
Electrical Conductivity and Surface Roughness Properties of Ferroelectric Gallium Doped Ba0,5Sr0,5TiO3 (BGST) Thin Films Irzaman Irzaman; A. Marwan; A. Arief; R.A. Hamdani; M. Komaro
Indonesian Journal of Physics Vol 19 No 4 (2008): Vol. 19 No. 4, October 2008
Publisher : Institut Teknologi Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (416.679 KB) | DOI: 10.5614/itb.ijp.2008.19.4.5

Abstract

Ba0.5Sr0.5TiO3 (BST) and gallium doped BST (BGST) thin films were successfully deposited on p-type Si(100) substrates. The thin films were fabricated by the chemical solution deposition (CSD) and spin coating method, with 1.00 M precursor and spinning speed of 3000 rpm for 30 seconds. The post deposition annealing of the 9 films were carried out BST without gallium (BGST 0%) annealing 850OC, BGST 0% annealing 900OC, BGST 0% annealing 950oC, BGST 5% annealing 850oC, BGST 5% annealing 900oC, BGST 5% annealing 950oC, BGST 10% annealing 850oC, BGST 10% annealing 900oC, BGST 10% annealing 950oC for 15 hour in oxygen gas atmosphere, respectively. The resistance and electrical conductivity of the grown thin films are characterized by I-V converter, meanwhile surface roughness of the grown thin films are characterized by atomic force microscopy (AFM) method. The electrical conductivity of the grown thin films BGST due to semiconductor. The results show that resistance and electrical conductivity of the thin film have strong correlation to the annealing temperature, concentration dopant and surface roughness.

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