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T. Saragi
Laboratory of Electronic Material Physics (LEMP), Department of Physics, Institut Teknologi Bandung, Jl. Ganesa 10 Bandung, Indonesia 40132
Astronomy Computer Science & IT Earth & Planetary Sciences Electrical & Electronics Engineering Energy Engineering

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Effect of Growth Temperature on Crystalline Structure of YBa2Cu3O7-δ Thin Films Deposited by MOCVD Method Using a Vertical Reactor with a Flow Guide Eko H. Sujiono; T. Saragi; P. Arifin; M. Barmawi
Indonesian Journal of Physics Vol 12 No 2 (2001): Vol. 12 No. 2, April 2001
Publisher : Institut Teknologi Bandung

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Abstract

Effect of growth temperature on crystalline structure of YBCO thin films have been studied by a MOCVD method using a vertical reactor with a flow guide. At growth temperature between 600°C and 675°C, the films are composed of a mixture of a-axis and c-axis oriented phases, while at growth temperature of 700°C or higher, the a-axis-oriented phase disappears. At these growth temperatures, only c-axis-oriented phases are existing on the films. Film grown at 680°C or higher have the composition of Y : Ba : Cu is 1 : 2 : 3, as confirmed from EDAX spectra. Films deposited at 700°C have critical temperature around 87.4 K.
Co-Authors Eko H. Sujiono M. Barmawi P. Arifin