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The Effect of Niobium and Rubidium Doping on the Energy Band Gap of a Lithium Tantalate (LiTaO3) Thin Film Agus Ismangil; Fatimah Arofiati Noor; Toto Winata
Indonesian Journal of Physics Vol 32 No 2 (2021): Vol 32 No 2 (2021)
Publisher : Institut Teknologi Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (420.255 KB) | DOI: 10.5614/itb.ijp.2021.32.2.1

Abstract

Chemical solution deposition (CSD) is a technique for making a film by keeping synthetic arrangements on the outer layer of the substrate. The outcomes show that the band gap energy of the LiTaO3 film is 1 eV. Electrons are more effectively invigorated to the valence band than to the conduction band on the grounds that the energy required is not excessively huge. Niobium-doped LiTaO3 film has a band gap energy of 1.15 eV. A large amount of energy is needed for electrons to be energized from the valence band to the conduction band. The rubidium-doped LiTaO3 film has a band gap energy of 1.30 eV.