International Journal of Electrical and Computer Engineering
Vol 10, No 2: April 2020

DC and RF characteristics of 20 nm gate length InAlAs/InGaAs/InP HEMTs for high frequency application

Amin Boursali (University Abu-Bakr Belkaid)
Ahlam Guen-Bouazza (University AboubekrBelkaid)
Choukria Sayah (University AboubekrBelkaid)

Article Info

Publish Date
01 Apr 2020

Abstract

lnAlAs/lnGaAs/InP high electron mobility transistor (HEMT) offers excellent high frequency operation.In this work,the DC and RF performance of a 20 nm gate length enhancement mode InAlAs/InGaAs/InP high electron mobility transistor (HEMT) on InP substrate are presented.The SILVACO-TCAD simulations performed at room temperature using the appropriate model sshowed that the studied device exhibit excellent pinch-off characteristics, with a maximum transconductance of 1100ms/mm, a threshold voltage of 0,62V, and an Ion/Ioff ratio of 2.106. The cut-off frequency and maximum frequency of oscillation are 980 GHz and 1.3THz respectively. These promising results allow us to affirm that this device is intended to be used in high frequency applications.

Copyrights © 2020




Citation Download
RIS
EndNote, Reference Manager, ProCite
BibTex
Latex, Jabref
Full PDF
727.058 KB
Original Source
Download Original
Google Scholar
Check in Google Scholar
Journal Info
International Journal of Electrical and Computer Engineering
Website

Abbrev

IJECE

Publisher

Institute of Advanced Engineering and Science

Subject

Computer Science & IT Electrical & Electronics Engineering

Description

International Journal of Electrical and Computer Engineering (IJECE, ISSN: 2088-8708, a SCOPUS indexed Journal, SNIP: 1.001; SJR: 0.296; CiteScore: 0.99; SJR & CiteScore Q2 on both of the Electrical & Electronics Engineering, and Computer Science) is the official publication of the Institute of ...