BERKALA FISIKA
Vol 13, No 1 (2010): Berkala Fisika

Mekanisme Hamburan Defek Statis Dan Vibrasi Termal Terhadap Mobilitas Elektron Pada Film Tipis GaN

Rusdiana, Dadi (Unknown)
Hasanah, Lilik (Unknown)
Suhendi, Endi (Unknown)



Article Info

Publish Date
19 Mar 2012

Abstract

Electrons Mobility in GaN thin films has been determined for temperature variation using approach method to the relaxation time due to the influence of static defect scattering and thermal vibrations. The simulation results show that electron mobility is strongly influenced by environmental temperature, except for the scattering of neutral impuritas type that does not affect the value of the charge carrier mobility even though the external temperature was varied.   Keywords: Electrons Mobility, defect static, thermal vibration

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Journal Info

Abbrev

berkala_fisika

Publisher

Subject

Physics

Description

BERKALA FISIKA adalah jurnal saintifik yang diterbitkan secara periodik 3 bulanan. Jurnal ini memuat kajian-kajian Fisika baik kajian teoretik maupun hasil eksperimen. Jurnal ini juga memberi ruang yang luas bagi kajian – kajian aplikasi fisika dalam bidang teknologi, ilmu-ilmu hayati dan ...