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All Journal Bulletin of Electrical Engineering and Informatics Bulletin of Electrical Engineering and Informatics Bulletin of Electrical Engineering and Informatics
W. Rahajandraibe
IM2NP - Polytech' Marseille Ecole Polytechnique Universitaire de Marseille
Computer Science & IT Electrical & Electronics Engineering Engineering

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On the Investigation of a Novel Dual-Control-Gate Floating Gate Transistor for VCO Applications Abderrezak Marzaki; V. Bidal; R. Laffont; W. Rahajandraibe; J-M. Portal; E. Bergeret; R. Bouchakour
Bulletin of Electrical Engineering and Informatics Vol 2, No 3: September 2013
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (234.197 KB) | DOI: 10.11591/eei.v2i3.206

Abstract

A new MOS device called Dual-Control Gate Floating Gate Transistor (DCG-FGT) is used as a building block in analog design. This device offers new approaches in circuit design and allows developing new functionalities through two operating modes: Threshold Voltage Adjustable Mode, where the DCG-FGT behaves like a MOS transistor with an electrically adjustable threshold voltage. Mixer Signal Mode where the DCG-FGT can mix two independent signals on its floating gate. This device is developed to be fully compliant with CMOS Non Volatile Memory (NVM) process. An electrical model of the DCG-FGT has been implemented in an electrical simulator to be available for analog design. A DCG-FGT based ring oscillator is studied in this paper.
On the Investigation of a Novel Dual-Control-Gate Floating Gate Transistor for VCO Applications Abderrezak Marzaki; V. Bidal; R. Laffont; W. Rahajandraibe; J-M. Portal; E. Bergeret; R. Bouchakour
Bulletin of Electrical Engineering and Informatics Vol 2, No 3: September 2013
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/eei.v2i3.206

Abstract

A new MOS device called Dual-Control Gate Floating Gate Transistor (DCG-FGT) is used as a building block in analog design. This device offers new approaches in circuit design and allows developing new functionalities through two operating modes: Threshold Voltage Adjustable Mode, where the DCG-FGT behaves like a MOS transistor with an electrically adjustable threshold voltage. Mixer Signal Mode where the DCG-FGT can mix two independent signals on its floating gate. This device is developed to be fully compliant with CMOS Non Volatile Memory (NVM) process. An electrical model of the DCG-FGT has been implemented in an electrical simulator to be available for analog design. A DCG-FGT based ring oscillator is studied in this paper.
On the Investigation of a Novel Dual-Control-Gate Floating Gate Transistor for VCO Applications Abderrezak Marzaki; V. Bidal; R. Laffont; W. Rahajandraibe; J-M. Portal; E. Bergeret; R. Bouchakour
Bulletin of Electrical Engineering and Informatics Vol 2, No 3: September 2013
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (234.197 KB) | DOI: 10.11591/eei.v2i3.206

Abstract

A new MOS device called Dual-Control Gate Floating Gate Transistor (DCG-FGT) is used as a building block in analog design. This device offers new approaches in circuit design and allows developing new functionalities through two operating modes: Threshold Voltage Adjustable Mode, where the DCG-FGT behaves like a MOS transistor with an electrically adjustable threshold voltage. Mixer Signal Mode where the DCG-FGT can mix two independent signals on its floating gate. This device is developed to be fully compliant with CMOS Non Volatile Memory (NVM) process. An electrical model of the DCG-FGT has been implemented in an electrical simulator to be available for analog design. A DCG-FGT based ring oscillator is studied in this paper.
Co-Authors Abderrezak Marzaki E. Bergeret J-M. Portal R. Bouchakour R. Laffont V. Bidal