Bulletin of Electrical Engineering and Informatics
Vol 2, No 3: September 2013

On the Investigation of a Novel Dual-Control-Gate Floating Gate Transistor for VCO Applications

Abderrezak Marzaki (IM2NP - Polytech'
Marseille Ecole Polytechnique Universitaire de Marseille)

V. Bidal (STMicroelectronics)
R. Laffont (IM2NP - Polytech'
Marseille Ecole Polytechnique Universitaire de Marseille)

W. Rahajandraibe (IM2NP - Polytech'
Marseille Ecole Polytechnique Universitaire de Marseille)

J-M. Portal (IM2NP - Polytech'
Marseille Ecole Polytechnique Universitaire de Marseille)

E. Bergeret (IM2NP - Polytech'
Marseille Ecole Polytechnique Universitaire de Marseille)

R. Bouchakour (IM2NP - Polytech'
Marseille Ecole Polytechnique Universitaire de Marseille)



Article Info

Publish Date
01 Sep 2013

Abstract

A new MOS device called Dual-Control Gate Floating Gate Transistor (DCG-FGT) is used as a building block in analog design. This device offers new approaches in circuit design and allows developing new functionalities through two operating modes: Threshold Voltage Adjustable Mode, where the DCG-FGT behaves like a MOS transistor with an electrically adjustable threshold voltage. Mixer Signal Mode where the DCG-FGT can mix two independent signals on its floating gate. This device is developed to be fully compliant with CMOS Non Volatile Memory (NVM) process. An electrical model of the DCG-FGT has been implemented in an electrical simulator to be available for analog design. A DCG-FGT based ring oscillator is studied in this paper.

Copyrights © 2013






Journal Info

Abbrev

EEI

Publisher

Subject

Electrical & Electronics Engineering

Description

Bulletin of Electrical Engineering and Informatics (Buletin Teknik Elektro dan Informatika) ISSN: 2089-3191, e-ISSN: 2302-9285 is open to submission from scholars and experts in the wide areas of electrical, electronics, instrumentation, control, telecommunication and computer engineering from the ...