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Growth of CrSi2 Nanostructures Using CrCl2 Powder on Si Substrates Li, Wen; Erchao, Meng; Matsushita, Tomoji; Oda, Shingo; Ishikawa, Daisuke; Nakane, Kaito; Tatsuoka, Hirokazu
Makara Journal of Technology Vol. 17, No. 1
Publisher : UI Scholars Hub

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Abstract

Chromium disilicide (CrSi2) nanostructures were grown by the exposure of Si (111) substrates to CrCl2 vapor in an argon gas flow at atmospheric pressure without using any metal catalyst. Dependence of the growth condition on the structural property was investigated. Hexagonal-shaped CrSi2 microrods were grown at 750 °C with 0.05 g of CrCl2. As the quantity of CrCl2 increased to 0.1 g, the bundle of CrSi2 nanowires with microrods and web-liked CrSi2 nanostructure with turning angles were grown at 750 °C and 700 °C, respectively. The preliminary discussion on the growth mechanism of CrSi2 micro- and nanostructures was carried out.
Preparations of Nanostructured Silicide Bundles and Oxide Arrays Tatsuoka, Hirokazu; Li, Wen; Meng, Erchao; Ishikwa, Daisuke; Nakane, Kaito; Oda, Shingo; Matsushita, Tomoji; Kurebayashi, Natsuki
Makara Journal of Technology Vol. 18, No. 1
Publisher : UI Scholars Hub

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A variety of nanostructured silicide bundles and oxide nanowire arrays with abundant, non-toxic materials we are prepared. The CrSi2 nanowire and Mg2Si/MgO composite nanowire bundles were synthesized using a Si substrate and a SiOx nanofiber bundle, respectively. The hexagonal MoSi2 nanosheet bundles were also synthesized using a MoS2 layered material as a template. In addition, ZnO, CuO/Cu2O and a-Fe2O3 nanowire arrays were prepared on semiconductor or metallic substrates. The growth phenomena and the structural properties of the nanostructured materials awere investigated. In addition, the preparations of axial and radial nanowire structures weare examined.