Article Per Year (5 Year)
p-Index From 2019 - 2024
0
P-Index
This Author published in this journals
All Journal Makara Journal of Technology
Takeshi Mizuno
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
Chemical Engineering, Chemistry & Bioengineering Civil Engineering, Building, Construction & Architecture Electrical & Electronics Engineering Engineering Materials Science & Nanotechnology Mechanical Engineering

Published : 2 Documents Claim Missing Document
Claim Missing Document
Check
Articles

Found 2 Documents
Search

 1 
Observation of Photovoltaic Effect and Single-photon Detection in Nanowire Silicon pn-junction Udhiarto, Arief; Purwiyanti, Sri; Moraru, Daniel; Mizuno, Takeshi; Tabe, Michiharu
Makara Journal of Technology Vol. 17, No. 2
Publisher : UI Scholars Hub

Show Abstract | Download Original | Original Source | Check in Google Scholar

Abstract

We study nanowire silicon pin and pn-junctions at room and low temperature. Photovoltaic effects are observed for both devices at room temperature. At low temperature, nanowire pn-junction devices show their ability to detect single photon. This ability was not been observed for pin devices. Phosphorus-boron dopant cluster in the depletion region is considered to have the main role for single-photon detection capability. Fundamental mechanism of dopant-based single-photon detection in nanowire pn-junction is described in details.
Observation of Tunneling Effects in Lateral Nanowire pn Junctions Purwiyanti, Sri; Udhiarto, Arief; Moraru, Daniel; Mizuno, Takeshi; Hartanto, Djoko; Tabe, Michiharu
Makara Journal of Technology Vol. 18, No. 2
Publisher : UI Scholars Hub

Show Abstract | Download Original | Original Source | Check in Google Scholar

Abstract

As electronic device dimensions are continuously reduced, applied bias conditions significantly change and the transport mechanisms must be reconsidered. Tunneling devices are promising for scaled-down electronics because of expected high-speed operation and relatively low bias. In this work, we investigated the tunneling features in silicon-oninsulator lateral nanowire pn junction and pin junction devices. By controlling the substrate voltage, tunneling features can be observed in the electrical characteristics. We found that the minimum substrate voltage required for tunneling to occur in pn junctions is higher as compared with pin junctions. The main cause of these effects relies in the difference between the doping profiles, since the pn junctions contain a co-doped region, while the pin junctions contain an i-layer.
Co-Authors Arief Udhiarto Arup Samanta, Arup Daniel Moraru Djoko Hartanto Krzysztof Tyszka, Krzysztof Michiharu Tabe Ryszard Jablonski, Ryszard Sri Purwiyanti Yuki Takasu, Yuki