<![CDATA[Abstrak Tugas akhir ini mempelajari sebaran lapisan BN dan sifat lstrik BN (Boron Nitrida) yang dideposisidi atas substrat Polyethylene Terephthalate (PET), Indium Tin Oxide/Polyethylene Terephthalate(ITO/PET), dan SiO2.Lapisan BN dibuat dengan cara memodifikasi 1 mg/mL BN menggunakanmetode eksfoliasi fasa cair yang ditambahkan interkalator 2 mg/mL NaOH dan diikuti dengan dropcasting di atas substrat. Sebaran lapisan BN pada PET dan ITO/PET terlihat merata, sedangkanpada SiO2 terlihat daerah tipis dan sebagian tebal. Perilaku semikonduktor terlihat pada BN/PETyang menghasilkan arus -315 nA sampai 154 nA saat tegangan divariasi dari -10 v sampai 10 vdengan Vth = 2V dan memiliki resistivitas 0,29x104 Ωcm. Perilaku yang sama ditunjukan olehBN/SiO2 yang menghasilkan arus -0,7 mA sampai 0,1 mA saat tegangan divariasi dari -10V sampai 10V dengan Vth = 4V dan mempunyai resistivitas 1,1 Ωcm. Hal ini berbeda pada BN pada ITO/PETyang menunjukkan perilaku gabungan insulator dan semikonduktor serta menghasilkan arusberkisar antara -4,3 mA sampai 3,14 mA saat tegangan divariasi dari -5V sampai 5V dan memilikiresistivitas 0,02 Ωcm. Dapat disimpulkan bahwa substrat mempengaruhi sebaran BN, ketebalanlapisan BN, dan sifat listrik BN. Namun tidak ada pengaruh substrat terhadap serapan dan emisispektrum cahaya. Kata Kunci: BN, PET, ITO, SiO2, Eksfoliasi, Sifat ListrikAbstract This final project aims to understand the distribution of Boron Nitride (BN) layer and the electricalproperties of BN deposited on Polyethylene Terephthalate (PET), Indium Tin Oxide/PolyethyleneTerephthalate (ITO/PET), and SiO2 substrate. The BN layer was created by modifying 1 mg/mL BNusing liquid phasse exfoliation method which was added by intercalator 2 mg/mL NaOH followed bydrop casting deposition on top of the substrates. BN layers were distributed more uniform on PET andless uniform on ITO/PET, while BN layers on SiO2 consisted of thick and thin layers. Electricalcharacterization was conducted by varying bias voltage and observing output current. Typicalsemiconductor characteristic I-V curve was observed on BN/PET. The current varies between -315 nAto 154 nA with bias voltage ranging from -10 v to 10 v and the Vth = 2 v. It has resistivity of 0,29x10Ωcm. The same characteristic is showed by BN/SiO2 which produces currents -0.7 mA to 0.1 mA withbias voltage ranging from -10 to 10v and the Vth = 4 v. It has resistivity of 1.1 Ωcm. This is differentwith BN deposited on ITO/PET showing both insulators and semiconductors which produces currents ranging from -4.3 mA to 3.14 mA with bias voltage ranging from -5 v to 5 v. It has resistivity of 0.02Ωcm. It can be concluded that substrates influence the BN layer distribution, BN layer thickness, andelectrical properties. However, there is no effect on optical spectrum measurement. Keywords: BN, PET, ITO, SiO2, Exfoliation, Electrical Properties, Mechanical Properties.]]>
