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All Journal Jurnal Penelitian Fisika dan Aplikasinya (JPFA) Jurnal Keteknikan Pertanian Perfecting a Video Game with Game Metrics GRADIEN WARTA JOURNAL ONLINE OF PHYSICS Panrita Abdi - Jurnal Pengabdian pada Masyarakat Jurnal Penelitian dan Pengabdian Kepada Masyarakat UNSIQ PengabdianMu: Jurnal Ilmiah Pengabdian kepada Masyarakat Indonesian Physical Review Al-Khidmat : Jurnal Ilmiah Pengabdian Kepada Masyarakat Indonesian Journal of Electrical Engineering and Computer Science Jurnal Inovasi Pengabdian Masyarakat Pendidikan PROSIDING SEMINAR NASIONAL FISIKA (E-JOURNAL)
Riska Ekawita
Universitas Bengkulu
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Journal : Perfecting a Video Game with Game Metrics

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A Low Cost C8051F006 SoC-Based Quasi-Static C-V Meter for Characterizing Semiconductor Devices Endah Rahmawati; Riska Ekawita; Maman Budiman; Mikrajuddin Abdullah; Khairurrijal Khairurrijal
TELKOMNIKA (Telecommunication Computing Electronics and Control) Vol 10, No 4: December 2012
Publisher : Universitas Ahmad Dahlan

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.12928/telkomnika.v10i4.862

Abstract

Based on a C8051F006 SoC (system on-a-chip), a simple and low cost quasi-static capacitance-voltage (C-V) meter was designed and developed to obtain C-V characteristics of semiconductor devices. The developed C-V meter consists of a capacitance meter, a programmable voltage source, a C8051F006 SoC-based slave controller, and a personal computer (PC) as a master controller. The communication between the master and slave controllers is facilitated by the RS 232 serial communication. The accuracy of the C-V meter was guaranteed by the calibration functions, which are employed by the program in the PC and obtained through the calibration processes of analog to digital converter (ADC), digital to analog converters (DACs) of the C8051F006 SoC, and the programmable voltage source. Examining 33-pF and 1000-pF capacitors as well three different p-n junction diodes, it was found that the capacitances of common capacitors are in the range of specified values and typical C-V curves of p-n junction diodes are achieved.
Co-Authors Chandra Kurniawan Elfi Yuliza Elfi Yuliza Endah Rahmawati Khairurrijal Khairurrijal Lestari, Widya Novia Lizalidiawati Lizalidiawati Maman Budiman Mikrajuddin Abdullah Muhammad Khafid Fauzi Nasution, Ahmad Azmi Nolla Kusumawardani Rahmat Awaludin Salam Rahmayanti, Handika Dany Rida Samdara Suardi, Nursakinah Supiyati . Suwarsono Suwarsono Vera Fuspita Sari Vionita Vionita Yazid Ismi Intara