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Faiz Salleh
Research Fellow of the Japan Society for the Promotion of Science, 8 Ichibancho, Chiyoda-ku, Tokyo 102-8472, Japan
Chemical Engineering, Chemistry & Bioengineering Civil Engineering, Building, Construction & Architecture Electrical & Electronics Engineering Engineering Materials Science & Nanotechnology Mechanical Engineering

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Development of Seebeck-Coefficient Measurement Systems Using Kelvin-Probe Force Microscopy Miwa, Kazutoshi; Salleh, Faiz; Ikeda, Hiroya
Makara Journal of Technology Vol. 17, No. 1
Publisher : UI Scholars Hub

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Abstract

Thermoelectric device is investigated by a number of researchers in order to enhance the thermoelectric efficiency. It is known that the efficiency can be improved by quantum effect. However, it is difficult to measure the thermoelectric characteristics of nanometer-scale structures. Thus a new measurement method is expected to be developed. We propose to apply Kelvin-probe force microscopy (KFM) to characterization of thermoelectric materials. KFM can locally observe surface potential of Fermi energy of a sample without touching the sample surface. In the present paper, we estimate the Seebeck coefficient of thin Si-on-insulator layers using KFM.
Seebeck Coefficient of SOI Layer Induced by Phonon Transport Salleh, Faiz; Oda, Takuro; Suzuki, Yuhei; Kamakura, Yoshinari; Ikeda, Hiroya
Makara Journal of Technology Vol. 19, No. 1
Publisher : UI Scholars Hub

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The Seebeck coefficient of a patterned Si wire on P-doped SOI (Si-on-insulator) layer with a carrier concentration of 1018 cm-3 was measured near room temperature. The Seebeck coefficient is found to be smaller than that in the SOI layer and to be closer to the calculated Seebeck coefficient including the electronic contribution. The decrease in the Seebeck coefficient of Si wire is likely to occur due to the elimination of the contribution of phonon drag part. From the theoretical calculation of scattering rates by considering the scattering processes in phonon system, it is considered that an increase in phonon-boundary scattering and simultaneously a decrease at the cross section of SOI layer are likely responsible for eliminating the phonon drag effect.
Construction of a Novel Method of Measuring Thermal Conductivity for Nanostructures Ikeda, Hiroya; Yoshida, Shoma; Suzuki, Yuhei; Manimuthu, Veerappan; Salleh, Faiz; Kuwahara, Fujio; Shimomura, Masaru; Murakami, Kenji
Makara Journal of Technology Vol. 19, No. 1
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With the aim of characterizing the thermal conduction in a nanometer-scaled materials, we have constructed a novel method on the basis of an ac calorimetric method. In this method, periodic sample heating is performed by light irradiation and the corresponding periodic temperature is detected by infrared irradiative thermometer. This makes us measure the thermal diffusivity out of contact with the objective sample. In the present study, we confirm to measure the thermal diffusivity of bulk Si and Cu by this non-contact method with halogen-lamp irradiation. In determining the thermal diffusivity from the relationship between distance deviation and delay time, the simplest wave equation is used, and the obtained values of thermal diffusivity for Si and Cu are close to those reported. Therefore, this non-contact method is useful for evaluating the thermal conduction and applicable for nanometer-scaled materials by improving local heating and local detecting systems.
Phonon-drag Contribution to Seebeck Coefficient of Ge-on-insulator Substrate Fabricated by Wafer Bonding Process Manimuthu, Veerappan; Yoshida, Shoma; Suzuki, Yuhei; Salleh, Faiz; Arivanandhan, Mukannan; Kamakura, Yoshinari; Hayakawa, Yasuhiro; Ikeda, Hiroya
Makara Journal of Technology Vol. 19, No. 1
Publisher : UI Scholars Hub

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In order to build high-sensitivity infrared photodetectors using SiGe nanowires, we investigate the thermoelectric characteristics of Ge-on-insulator (GOI) layers as a reference for SiGe. We fabricate p-type GOI substrates with an impurity concentration of 1016-1018cm-3 by a wafer-bonding process using Ge and oxidized Si wafers. Annealing treatment is performed in order to further increase the bonding strength of Ge/SiO2 interface. We measure the Seebeck coefficient in the temperature range of 290-350 K. The Seebeck coefficient of the GOI layers is very close to the theoretical value for Ge, calculated on the basis of carrier transport. Hence, there is a small phonon-drag effect in GOI. On the other hand, the effect of phonon drag on the Seebeck coefficient of Si is usually significant. These results likely stem from the differences between phonon velocity, phonon mean-free-path, and hole mobility between Ge and Si.
Co-Authors Fujio Kuwahara Hiroya Ikeda Kazutoshi Miwa, Kazutoshi Kenji Murakami Masaru Shimomura Mukannan Arivanandhan Shoma Yoshida Takuro Oda Veerappan Manimuthu Yasuhiro Hayakawa Yoshinari Kamakura Yuhei Suzuki