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All Journal JPSE (Journal of Physical Science and Engineering)
Darminto Darminto
Department of Physics, Faculty of Science and Data Analytics, Institut Teknologi Sepuluh Nopember, Jl. Teknik Kimia, Surabaya, 60111, Indonesia Center of Excellence in Automotive Control and System, Institut Teknologi Sepuluh Nopember, Jl. Teknik Kim
Astronomy Electrical & Electronics Engineering Materials Science & Nanotechnology Physics

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Hydrogenated Amorphous Silicon Density of State Analyzed by Dielectric Function Model Derived from Ellipsometric Spectroscopy Soni Prayogi; Yoyok Cahyono; Darminto Darminto
JPSE (Journal of Physical Science and Engineering) Vol 7, No 2 (2022): JPSE (Journal of Physical Science and Engineering)
Publisher : Universitas Negeri Malang

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Abstract

In this study, we report the application of a functional dielectric model of scalable ellipsometric spectroscopy to investigate the optical response of materials in the optical spectrum modeling of hydrogenated amorphous silicon. ES is used to obtain the dielectric constant of the data fitting experimental. Then ψ and Δ are obtained from the analysis of the experimental comparison of the valence band and the conduction band state density with the band structure theory for a-Si: H. The analysis results are that for a-Si: H, the density of state model for all electronic transitions is obtained, whose results are consistent with experimental data from ES measurements over the entire photon energy range of 0.5–6.5 eV. Our results demonstrate the high-energy excitons and plasmons for the performance of photovoltaic devices in a-Si: H. Overall, we believe our methodology can study in detail about electron and hole interactions in semiconductors.DOI: 10.17977/um024v7i22022p068
Co-Authors Cahyono, Yoyok Prayogi, Soni