Proceeding of the Electrical Engineering Computer Science and Informatics
Vol 2: EECSI 2015

Sub-Threshold Performance Comparison of Junctionless FET and SOI-Based MOSFET

Riyadi, Munawar A ( Diponegoro University)
Sukawati, Irawan Dharma ( Diponegoro University)
Prakoso, Teguh ( Diponegoro University)
Darjat, Darjat ( Diponegoro University)

Article Info

Publish Date
15 Aug 2015

Abstract

The importance of dimension scaling in recent electronic devices has been forcing manufacturers to innovate on the structure as well as the conducting mechanism. The junctionless FETs (JLFETs) have shown the potential to further scaling process, by diminishing the requirement of junction for source and drain, in contrast to silicon on insulator (SOI) FETs. This paper focuses on comparing the subthreshold performance of junctionless FET and SOI MOSFET FET using TCAD tools. The result shows that in terms of subthreshold slope, JLFET approaches near ideal value of 60 mV/decade, which is superior than the SOI FET for similar doping rate. On the other hand, the threshold value shows different tendencies between those types of device.

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Journal Info
Proceeding of the Electrical Engineering Computer Science and Informatics
Website

Abbrev

EECSI

Publisher

IAES Indonesia Section and Partners

Subject

Computer Science & IT Electrical & Electronics Engineering

Description

Proceeding of the Electrical Engineering Computer Science and Informatics publishes papers of the "International Conference on Electrical Engineering Computer Science and Informatics (EECSI)" Series in high technical standard. The Proceeding is aimed to bring researchers, academicians, scientists, ...