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Silikat dan Titanium Silikat Mesopori-Mesotruktur Berbasis Struktur Heksagonal dan Kubik Hari Sutrisno; Retno Arianingrum; Ariswan Ariswan
Jurnal Matematika & Sains Vol 10, No 2 (2005)
Publisher : Institut Teknologi Bandung

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Silicalite (MCM-41 & MCM-48) and titanium silicalite (Ti-MCM-41 & Ti-MCM-48) mesoporous-mesostucture material have been synthesized and studied. Its have been obtained from hydrolysis and condensation of reactant : tetraethyl orthosilicate (TEOS) as silicium source and cetyltrimethyl ammonium bromide (CTAB) surfactant as template, NaOH as base and water solution. Ti-MCM-41 & Ti-MCM-48 mesoporous-mesostucture material have been synthesized from crystal of [Ti8O12(H2O)24]Cl8.HCl.7H2O as titanium source. Surfactant was removed by calcinations at 5500C for 5 hours. MCM-41 and Ti-MCM-41 are crystallized on the hexagonal structure, plane group p6 with unit cell parameter: a = 44.09 and 49.48 Çº respectively, meanwhile MCM-48 and Ti-MCM-48 are crystallized on the cubic structure, space group Ia3d with unit cell parameter: a = 87.46 and 94.42 Çº respectively.

The Effect of School Principals Integrity, Communication Atmosphere, Discipline and Achievement Motivation on Teachers’ Work Productivity at Public Vocational High School (SMK) in Padang Ariswan Ariswan; Rusdinal Rusdinal; Muri Yusuf; Gusril Gusril
International Conferences on Educational, Social Sciences and Technology
Publisher : Fakultas Ilmu Pendidikan UNP

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The phenomenon in the field illustrates the low productivity of teachers in assigning tasks. This research aims to reveal the influence of: (1) Integrity of principal and work discipline to motivation of teacher achievement in SMK, (2) Integrity of principal to teacher work discipline in SMK Negeri Kota Padang, (3) Integrity of principal, work discipline and motivation achievement on teacher work productivity in SMK Negeri Kota Padang. The sample of the study amounted to 266 people. The research data was collected by Likert scale model questionnaire. Data were analyzed by moderation variable path analysis technique. The result of the research shows that: (1) There is direct and indirect influence significantly Integrity of school principal and work discipline of teacher toward achievement motivation, (2) There is direct and indirect influence significantly Integrity of principal to work discipline (3) There is direct influence and not significantly the integrity of the principal, work discipline and achievement motivation affect the productivity of teachers work.

THE STRUCTURE AND CHEMICAL COMPOSITION OF SEMICONDUCTOR MATERIAL Sn(Se0,2S0.8) THIN FILM PREPARED USING EVAPORATION METHOD FOR SOLAR CELL APPLICATION Joko Utomo Utomo; Ariswan Ariswan
Jurnal Sains Dasar Vol 4, No 2 (2015): October 2015
Publisher : Faculty of Mathematics and Natural Science, Universitas Negeri Yogyakarta

This research aims to grow a thin film Sn(Se0.2S0.8) by evaporation method. The researcher can understand the effect of spacer variations towards the crystal structure, lattice parameter, surface morphology, and chemical composition of Sn(Se0,2S0,8) thin film. The process of Sn(Se0.2S0.8) thin film preparation was done by using the evaporation method with pressure about 2 x 10-5 mbar. The process of Sn(Se0.2S0.8) thin film deposition was performed by giving some space between the substrate and the source i.e. 25 cm, 15 cm, and 10 cm. Characterization process was performed by using X-ray Diffraction (XRD) to determine the structure and parameter of thin film, Scanning Electron Microscopy (SEM) to determine the thin film of surface morphology, and Energy Dispersive Analysis X-Ray (EDAX) to determine the chemical composition of the thin film. The result of XRD characterization show that the Sn(Se0.2S0.8) thin film was polycrystalline and it has an orthorombic crystal structure, with the lattice parameter were sample 1 (spacer 25 cm): a = 4.306 Å, b = 11.30 Å, c = 4.139 Å; sample 2 (spacer 15 cm): a = 4.286 Å, b = 11.18 Å, c = 4.123 Å; sample 3 (spacer 10 cm): a = 4.301 Å, b = 11.30 Å, c = 4.143 Å. The result of SEM characterization in the sample 2 of Sn(Se0.2S0.8) showed that the surface morphology of the sample consisted of homogeneous oval shaped grains, with the diameter size of crystal grains on the surface about 0.3 μm – 0.5 μm. The result of EDAX analysis showed that comparison of percentage of chemical composition thin film Sn(Se0.2S0.8) was 1 : 0.11 : 0.79. Keywords: evaporation method, semiconductor Sn(Se0.2S0.8), solar cell, material characteristics

PENGARUH ALUR PEMANASAN PADA KUALITAS KRISTAL Sn(S0,5Te0,5) HASIL PREPARASI DENGAN TEKNIK BRIDGMAN THE EFFECT OF THE HEATING SEQUENCE OF THE CRYSTAL QUALITY Sn(S0,5Te0,5) PREPARATION RESULTS BY BRIDGMAN TECHNIQUE Sya'amzuri Hidayat; Ariswan Ariswan
Jurnal Ilmu Fisika dan Terapannya (JIFTA) Vol 5, No 5 (2016): Jurnal Fisika
Publisher : Prodi Fisika, Departemen Pendidikan Fisika

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AbstrakPenelitian ini bertujuan untuk mengetahui pengaruh alur pemanasan terhadap kualitas struktur kristal Sn(S0,5Te0,5), mengetahui komposisi kimia dan morfologi permukaan kristal Sn(S0,5Te0,5) hasil preparasi dengan teknik Bridgman. Proses preparasi kristal Sn(S0,5Te0,5) dilakukan dengan menggunakan teknik Bridgman dengan melakukan variasi alur pemanasan. Alur pemanasan divariasi sebanyak 3 kali, yaitu alur pemanasan I: suhu 250oC konstan selama 4 jam, suhu 500oC konstan selama 4 jam; alur pemanasan II: suhu 250oC konstan selama 2 jam, suhu 500oC konstan selama 6 jam; alur pemanasan III: suhu 250oC konstan selama 6 jam, suhu 500oC kontan selama 2 jam. Kristal dikarakterisasi menggunakan XRD, SEM dan EDS. Hasil karakterisasi XRD menunjukan semua sampel memiliki struktur kristal cubic dengan parameter kisi, sampel I: a=6.263 Å; sampel II: a=6.271 Å; sampel III: a=6.283 Å. Variasi alur pemanasan berpengaruh pada parameter kisi kristal. Kristal terbaik dihasilkan dari alur pemanasan II. Hal tersebut mengindikasikan bahwa pada alur pemanasan II memiliki pemilihan waktu pemanasan dan suhu pemanasan terbaik dibanding dengan alur pemanasan lainnya. Hasil karakterisasi SEM menunjukan morfologi kristal Sn(S0,5Te0,5) sudah terbentuk. Terbentuknya kristal ditandai dengan munculnya grain dan polikristal yang tersusun berlapis dengan ukuran 5 μm – 10 μm. Berdasarkan hasil EDS kristal Sn(S0,5Te0,5) mengandung unsur Sn,S, dan Te dengan presentase komposisi kimia unsur Sn = 54.42%; S = 11.20%; Te = 34.38%. Perbandingan mol antara unsur Sn: S: Te adalah 1 : 0,2 : 0,6. Berdasarkan presentase komposisi kimia antara unsur Sn,S, dan Te bahwa kristal Sn(S0,5Te0,5) kaya akan unsur Sn dan Te namun miskin akan unsur S.Kata kunci: kristal Sn(S0,5Te0,5), alur pemanasan, kualitas kristalAbstractThis research aims to know the effect of the heating sequence of the crystal quality Sn(S0,5Te0,5), to know the composition and the surface morphology of Sn(S0,5Te0,5) crystal preparation results by bridgman technique. The preparation process of Sn(S0,5Te0,5) crystal was performed using bridgman technique with heating sequence variation. heating sequence was varied for 3 times, i.e heating sequence I: temperature 250oC constant for 4 hours, temperature 500oC constant for 4 hours; heating sequence II: temperature 250oC constant for 2 hours, temperature 500oC constant for 6 hours; heating sequence III: temperature 250oC constant for 6 hours, temperature 500oC constant for 2 hours. The crystal was characterized by X-Ray Diffraction, Scanning Electron Microscopy, and Energy Dispersive Spectroscopy. The XRD characterization results show that all sampels have cubic crystal structure with the value of lattice parameters are sample I (heating sequence I): a=6.263 Å; sampel II (heating sequence II): a=6.271 Å; sampel III (heating sequence III): a=6.283 Å. The variation in heating sequence have effect on crystal lattice parameter. The best crystal was produced by heating sequence II. That phenomena indicate that heating sequence II has the best determining the heating time and the heating temperature. The SEM characterization shows that surface morphology of Sn(S0,5Te0,5) crystal has been formed. The formation of crystals characterized by the emergence of structured grain and layered polycrystalline with a size of 5 μm - 10 μm. Based on the result of EDS, Sn(S0,5Te0,5) crystal contain elements of Sn, S, and Te with chemical composition percentage are Sn = 54.42%; S = 11.20%; Te = 34.38%. The molarity comparison of Sn: S: Te is 1 : 0,2 : 0,6. Based on chemical composition percentage that Sn (S0,5Te0,5) crystal rich in elements Sn and Te but the poor in element S.Keywords: Sn(S0,5Te0,5) crystal, heating sequence, crystal quality

PREPARASI DAN KARAKTERISASI LAPISAN TIPIS Sn(S0,5Te0,5) DENGAN TEKNIK EVAPORASI VAKUM PREPARATION AND CHARACTERIZATION OF THIN FILM Sn(S0,5 Te0,5) WITH VACUM EVAPORATION TECNIQUES Wahyu Lestari; ariswan ariswan
Jurnal Ilmu Fisika dan Terapannya (JIFTA) Vol 6, No 2 (2017): Jurnal Fisika
Publisher : Prodi Fisika, Departemen Pendidikan Fisika

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AbstrakPenelitian ini bertujuan untuk mengetahui pengaruh suhu substrat terhadap kualitas lapisan tipis Sn(S0,5Te,5), mengetahui struktur kristal, parameter kisi, morfologi permukaan dan komposisi kimia lapisan tipis Sn(S0,5Te,5) hasil preparasi dengan teknik evaporasi vakum.Proses penumbuhan kristal lapisan tipis Sn(S0,5Te,5) menggunakan teknik evaporasi vakum dilakukan dengan memanaskan bahan Sn, S, dan Te pada suhu tertentu dengan perbandingan molaritas 1:0,5:0,5. Dalam penelitian ini, penumbuhan kristal lapisan tipis Sn(S0,5Te,5) dengan memvariasikan suhu substrat, yaitu 350oC, 450oC, 500oC, dan 600oC. Lapisan tipis Sn(S0,5Te,5) hasil preparasi dengan teknik evaporasi vakum kemudian dikarakterisasi menggunakan XRD (X-Ray Diffraction) untuk menentukan struktur kristal dan parameter kisi kristal, SEM (Scanning Electron Microscopy) untuk mengetahui morfologi permukaan kristal, dan EDS (Energy Dispersive Spectrometry) untuk mengetahui komposisi kimia pada kristal.Hasil karakterisasi XRD berupa difaktogram menunjukkan hasil bahwa kristal pada lapisan tipis Sn(S0,5Te,5) yang terbentuk berstruktur kubik, dengan nilai parameter kisi pada sampel 1 a = 6,071 Å, sampel 2 a = 6,108 Å, sampel 3 a= 6,497 Å, dan untuk sampel 4 amofr. Hasil karakterisasi SEM memperlihatkan bahwa kristal pada lapisan tipis Sn(S0,5Te,5) yang terbentuk memiliki keseragaman bentuk dan warna butiran kecil-kecil serta sudah terbentuk grain dan hasil karakterisasi EDS diperoleh perbandingan unsur Sn:S:Te yaitu 1 : 0,25 : 0,51. Kata kunci: struktur kristal, lapisan tipis, teknik evaporasi vakum, preparasi AbstractThis reserch aims to determine the effect of heating subtrate temperature on the quality of Sn(S0.5Te0.5), the crystal structure, lattice parameter,surface morphology and chemical composition of the Sn(S0.5Te0.5) thin film by vacuum evaporation technique.The crystal growwing process of Sn(S0,5Te0,5) thin film by vacuum evaporation technique was done by heating the material at a certain temperature and molarity 1: 0.5: 0.5 comparison. In this research, the process of growing crystals of the Sn(S0.5Te0.5) thin film with the variation of subtrate temperature are 350oC, 450oC, 500oC, and 600oC. The result of thin film preparation by vacuum evaporation technique is characterized by XRD (X-Ray Diffaction) to determine crystal structure, SEM (Scanning Electron Microscopy) to dertermine the crystal surface morphology, and EDS (Energy Dispersive Spectrometry) to the determine chemical composition of crystals.The result of XRD characterization shows that diffractogram from crystalline of the Sn(S0.5Te0.5) thin film have cubic crystal structure with the values of lattice parameter, on sample 1 a = 6.071 Å, sample 2 6.108 Å, sample 3 a = 6.497 Å, and for the sample 4 amofr. The result of SEM characterization shows that the crystalline of Sn(S0.5Te0.5) thin film that formed has the pieces of grains and homogeneous and the results of EDS characterization obtained Sn:S:Te molarity ratio is 1:0.25:0.51. Key words : crystal structure, thin film, vacuum evaporation technique, preparation

PREPARASI DAN KARAKTERISASI LAPISAN TIPIS Sn(S0,5Te0,5) DENGAN TEKNIK EVAPORASI VAKUM PREPARATION AND CHARACTERIZATION OF THIN FILM Sn(S0,5 Te0,5) WITH VACUM EVAPORATION TECNIQUES Wahyu Lestari; Ariswan Ariswan
Jurnal Ilmu Fisika dan Terapannya (JIFTA) Vol 6, No 2 (2017): Jurnal Fisika
Publisher : Prodi Fisika, Departemen Pendidikan Fisika

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AbstrakPenelitian ini bertujuan untuk mengetahui pengaruh suhu substrat terhadap kualitas lapisan tipis Sn(S0,5Te,5), mengetahui struktur kristal, parameter kisi, morfologi permukaan dan komposisi kimia lapisan tipis Sn(S0,5Te,5) hasil preparasi dengan teknik evaporasi vakum.Proses penumbuhan kristal lapisan tipis Sn(S0,5Te,5) menggunakan teknik evaporasi vakum dilakukan dengan memanaskan bahan Sn, S, dan Te pada suhu tertentu dengan perbandingan molaritas 1:0,5:0,5. Dalam penelitian ini, penumbuhan kristal lapisan tipis Sn(S0,5Te,5) dengan memvariasikan suhu substrat, yaitu 350oC, 450oC, 500oC, dan 600oC. Lapisan tipis Sn(S0,5Te,5) hasil preparasi dengan teknik evaporasi vakum kemudian dikarakterisasi menggunakan XRD (X-Ray Diffraction) untuk menentukan struktur kristal dan parameter kisi kristal, SEM (Scanning Electron Microscopy) untuk mengetahui morfologi permukaan kristal, dan EDS (Energy Dispersive Spectrometry) untuk mengetahui komposisi kimia pada kristal.Hasil karakterisasi XRD berupa difaktogram menunjukkan hasil bahwa kristal pada lapisan tipis Sn(S0,5Te,5) yang terbentuk berstruktur kubik, dengan nilai parameter kisi pada sampel 1 a = 6,071 Å, sampel 2 a = 6,108 Å, sampel 3 a= 6,497 Å, dan untuk sampel 4 amofr. Hasil karakterisasi SEM memperlihatkan bahwa kristal pada lapisan tipis Sn(S0,5Te,5) yang terbentuk memiliki keseragaman bentuk dan warna butiran kecil-kecil serta sudah terbentuk grain dan hasil karakterisasi EDS diperoleh perbandingan unsur Sn:S:Te yaitu 1 : 0,25 : 0,51.Kata kunci: struktur kristal, lapisan tipis, teknik evaporasi vakum, preparasiAbstractThis reserch aims to determine the effect of heating subtrate temperature on the quality of Sn(S0.5Te0.5), the crystal structure, lattice parameter,surface morphology and chemical composition of the Sn(S0.5Te0.5) thin film by vacuum evaporation technique.The crystal growwing process of Sn(S0,5Te0,5) thin film by vacuum evaporation technique was done by heating the material at a certain temperature and molarity 1: 0.5: 0.5 comparison. In this research, the process of growing crystals of the Sn(S0.5Te0.5) thin film with the variation of subtrate temperature are 350oC, 450oC, 500oC, and 600oC. The result of thin film preparation by vacuum evaporation technique is characterized by XRD (X-Ray Diffaction) to determine crystal structure, SEM (Scanning Electron Microscopy) to dertermine the crystal surface morphology, and EDS (Energy Dispersive Spectrometry) to the determine chemical composition of crystals.The result of XRD characterization shows that diffractogram from crystalline of the Sn(S0.5Te0.5) thin film have cubic crystal structure with the values of lattice parameter, on sample 1 a = 6.071 Å, sample 2 6.108 Å, sample 3 a = 6.497 Å, and for the sample 4 amofr. The result of SEM characterization shows that the crystalline of Sn(S0.5Te0.5) thin film that formed has the pieces of grains and homogeneous and the results of EDS characterization obtained Sn:S:Te molarity ratio is 1:0.25:0.51.Key words : crystal structure, thin film, vacuum evaporation technique, preparation

STRUKTUR DAN KOMPOSISI KIMIA BAHAN SEMIKONDUKTOR LAPISAN TIPIS Sn(S0,8 Te0,2) HASIL PREPARASI DENGAN TEKNIK EVAPORASI VAKUM STRUCTURE AND CHEMICAL COMPOTITION OF SEMICONDUCTOR MATEERIAL Sn(S0,8 Te0,2) THIN FILM PREPARATION RESULT BY VACUM EVAPORATION TECNIQUES Siti Khoirunisa'; Ariswan Ariswan
Jurnal Ilmu Fisika dan Terapannya (JIFTA) Vol 6, No 3 (2017): Jurnal Fisika
Publisher : Prodi Fisika, Departemen Pendidikan Fisika

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AbstrakPenelitian ini bertujuan untuk menumbuhkan lapisan tipis Sn(S0,8Te0,2) dengan teknik evaporasi vakum untuk mempelajari variasi jarak spacer,karakter lapisan tipis Sn(S0,8Te0,2) sebagai semikonduktor dengan karakterisasi struktur kristal, morfologi permukaan, dan komposisi kimia.Variasi jarak spacer ada tiga, yaitu 10 cm, 15 cm dan 25cm. Sampel dikarakterisasi menggunakan XRD (X-Ray Diffraction) untuk mengetahui struktur kristal, SEM (Scanning Electron Microscopy) untuk mengetahui morfologi permukaan, dan EDAX (Energy Dispersive Analysis X-RD) untuk mengetahui komposisi kimia. Hasil menunjukkan bahwa variasi jarak menyebabkan perbedaan kualitas kristal lapisan tipis tiap sampel, yang ditandai dengan adanya perbedaan intensitas spectrum,ketiga sampel memiliki struktur kristal orthorhombik dengan parameter kisi menggunakan metode analitik, sampel 1 (jarak spacer 10cm): a = 8,932 (; b =3,926 (; c = 13,870 (, sampel 2 (jarak spacer 15cm): a = 8,551 (; b =3,766 (; c = 14,659 (, sampel 3 (jarak spacer 25cm): a = 8,882 (; b =3,887 (; c = 14,077 (.. Permukaan lapisan tipis homogen terdiri atas butiran berukuran µm dan µm serta hasil karakterisasi EDAX diperoleh perbandingan unsur Sn:S:Te yaitu 1: 0,80 : 0,14.Kata kunci: struktur kristal, morfologi permukaan, , spacer, komposisi kimia kristal Sn(S0,8Te,2)AbstractThis research aims to grow Sn(S0,8Te0,2) thin films by vacuum evaporation method to study characterization of Sn(S0,2Te0,8) thin films as smiconducter materials which includes characterization of the crystal structure, surface morphology, and chemical composition. The spacer were varied for 3 times, namely 10 cm, 15 cm and 25cm. Samples were characterized by XRD (X-Ray Diffraction) to determine the crystal structure, SEM (Scanning Electron Microscopy) to determine the surface morphology, and EDAX (Energy Dispersive Analysis X-RD) to determine the chemical composition. The result showed that spacer variations caused the difference in thin films quality, marked by the difference of spectrum intensity,the 3 samples had orthorhombic crystal structure with the lattice parameters using analitical method were sample 1 (the spacer 10 cm): a = 8,932 (; b =3,926 (; c = 13,870 (, sample 2 (the spacer 15 cm): a = 8,588 (; b =3,751 (; c = 13,907 (,and sample 3 (the spacer 25 cm):a = 8,882 (; b =3,887 (; c = 14,077 (. The surface of sample was homogenous and consisted of grains with µm andµm size. Thin film contains elements of Sn, S, and Te with the chemical composition percentages were the molarity comparisons of Sn : S : Te was 1: 0,80 : 0,14.Keywords: crystal structure, surface morphology , spacer, chemical composition Sn(S0,8Te,2)

PENGARUH TEMPERATUR TERHADAP RESISTANSI BAHAN KONDUKTOR Al, Cu dan SEMIKONDUKTOR LAPISAN TIPIS Pb(Se,Te), CdTe HASIL PREPARASI DENGAN TEKNIK EVAPORASI TERMAL THE EFFECT OF THE TEMPERATURE HEATING TO THE RESISTANCE VALUE ON THE Al, Cu and SEMICONDUCTOR MATERIAL Pb (Se,Te), CdTe THIN LAYER PREPARED BY THERMAL EVAPORATION TECHNIQUE Nur Hidayat; Ariswan Ariswan
Jurnal Ilmu Fisika dan Terapannya (JIFTA) Vol 5, No 6 (2016): Jurnal Fisika
Publisher : Prodi Fisika, Departemen Pendidikan Fisika

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AbstrakPenelitian ini bertujuan untuk mengetahui pengaruh temperatur terhadap nilai resistansi dari alumunium, tembaga dan bahan semikonduktor Pb(Se,Te), CdTe. Penelitian ini menggunakan metode eksperimen. Data yang diperoleh merupakan hubungan antara suhu dan nilai resistansi sampel. Data yang diperoleh dianalisis dengan menggunakan software origin 6.1 untuk mendapatkan bentuk grafik hubungan temperatur terhadap nilai resistansi untuk tiap-tiap sampel uji. Hasil penelitian menunjukkan adanya penurunan nilai resistansi pada bahan semikonduktor yang diformulasikan menurut persamaan berikut ini. Untuk bahan PbSe ????(????) = (176,34 + 8418,54 e t / 7,34 ) Ω, bahan PbTe ????(????) = (9,61 + 75,34 e t / 13,92 ) Ω, dan bahan CdTe ????(????) = (0,61 + 6,84 e t / 34,68 ) Ω. Untuk bahan konduktor terdapat kenaikan nilai resistansi yang diformulasikan menurut persamaan berikut ini. Untuk alumunium ????(????) = (-2,21 + 0,09t) Ω, untuk tembaga ????(????) = (-0,74 + 0,03t) Ω, dengan batas suhu terendah sebesar 30oCKata Kunci : Resistansi, Semikonduktor, Konduktor.AbstractThis research aims to observe the temperature effect of the resistance value of the thin layer Pb(Se,Te), CdTe semiconductors, and Al, Cu metal. This research using experiment method, where the result of data are relation between the temperature and the trial sample resistance. Then we analysis the data result using origin 6.1 for finding the shape of the relations chart for each trial sample. The result of this research shows that there was a decrease of the resistance value that affected by increasing of the temperature on the surface of thin layer semiconductor which formulated into following equations. For PbSe ????(????) = (176.34 + 8418.54 et / 7.34 ) Ω, PbTe ????(????) = (9.61 + 75.34 et / 13.92 ) Ω, and CdTe ????(????) = (0.61 + 6.84 et / 34.68 ) Ω. And for Al, Cu there was increase of the resistance value which formulated into following equations. For Alumunium R(t) = (-2.21+0.09t) Ω. for copper R(t) = (-2.21+0.09t) Ω, with the lowest temperature is 30oC.Keywords : Resistance, Semiconductor, Conductor.

PENGARUH SUHU SUBSTRAT TERHADAP KUALITAS KRISTAL LAPISAN TIPIS Sn(Se0,4Te0,6) HASIL PREPARASI DENGAN TEKNIK EVAPORASI VAKUM THE EFFECT OF SUBSTRATE TEMPERATURE ON Sn(Se0,4Te0,6) THIN FILMS CRYSTAL QUALITY PREPARED BY VACUUM EVAPORATION TECHNIQUES Vina Hentri Tunita Ningrum; Ariswan Ariswan
Jurnal Ilmu Fisika dan Terapannya (JIFTA) Vol 6, No 4 (2017): Jurnal Fisika
Publisher : Prodi Fisika, Departemen Pendidikan Fisika

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Abstrak Penelitian ini bertujuan untuk mengetahui pengaruh variasi suhu substrat terhadap kualitas, struktur, parameter kisi kristal, morfologi permukaan dan komposisi kimia lapisan tipis Sn(Se0,4Te0,6).Proses preparasi lapisan tipis Sn(Se0,4Te0,6) menggunakan teknik evaporasi vakum dengan massa bahan 0,2 gram, tekanan vakum 410-5 mbar, dan spacer 15 cm. Variasi suhu substrat yang digunakan dalam pembuatan lapisan tipis, yaitu 250ºC, 300ºC, dan 350ºC. Hasil preparasi dikarakterisasi menggunakan XRD (X-Ray Diffraction) untuk mengetahui struktur kristal, SEM (Scanning Electron Microscopy) untuk mengetahui morfologi permukaan kristal, dan EDAX (Energy Dispersive Analysis X-Ray) untuk mengetahui komposisi kimia. Hasil karakterisasi XRD menunjukkan bahwa kristal yang terbentuk memiliki struktur kristal kubik. Nilai parameter kisi (suhu substrat 250ºC) : a= 6,157 Å, (suhu substrat 300ºC): a= 6,157 Å, dan (suhu substrat 350ºC): a= 6,167 Å. Hasil karakterisasi SEM menunjukkan morfologi permukaan dari lapisan tipis yang terbentuk tersusun atas butiran (grain) yang berbentuk bulat. Sifat homogen kristal dapat dilihat dari bentuk, struktur, dan warna yang seragam dengan diameter rata-rata grain 0,1005 m. Hasil karakterisasi EDAX diperoleh perbandingan molaritas unsur Sn:Se:Te yaitu 1:0,44:0,51. Kata kunci: semikonduktor, lapisan tipis Sn(Se0,4Te0,6), teknik evaporasi vakum Abstract This research aimed to determine the effect of substrate temperature variation on the quality, structure, crystal lattice parameter, surface morphology and chemical composition of the Sn(Se0,4Te0,6) thin film.Preparation process of Sn(Se0,4Te0,6) thin film using vacuum evaporation technique with 0,2 gram mass of material, vacuum pressure of 410-5mbar, and 15 cm spacer. A substrate temperature variations which were 250ºC, 300ºC, and 350ºC. The result of preparation, then were characterized by XRD (X-Ray Diffraction) to determine the crystal structure, SEM (Scanning Electron Microscopy) to determine the crystal surface morphology, and EDAX (Energy Dispersive Analysis X-Ray) to determine chemical composition.The result of XRD characterization showed that crystal form have cubic crystal structure. The values of lattice parameter on (subtrate temperature of 250ºC) were a= 6,157 Å, sample 2 (subtrate temperature of 300ºC) were a= 6,157 Å, and sample 3 (subtrate temperature of 350ºC) were a= 6,167 Å. The result of SEM characterization showed that the surface morphology of thin film consisted of round grains. Homogeneous structure marked by the uniformity of shape, structure, and colour, with about 0,1005 m particle size. The result of EDAX characterization obtained comparison molarity elements of Sn:Se:Te was 1:0,44:0,51. Key words :semiconductor, Sn(Se0,4Te0,6) thin film, vacuum evaporation techniques

PENGARUH WAKTU ALUR PEMANASANTERHADAP KUALITAS KRISTAL Sn(S0,4Te0,6)HASIL PREPARASI DENGAN TEKNIK BRIDGMAN THE EFFECT OF FLOW HEATING TIME FOR CRYSTAL QUALITY Sn(S0.4Te0.6)PREPARATION PRODUCTS WITHBRIDGMAN TECHNIQUE Erda Harum Saputri; Ariswan Ariswan
Jurnal Ilmu Fisika dan Terapannya (JIFTA) Vol 5, No 5 (2016): Jurnal Fisika
Publisher : Prodi Fisika, Departemen Pendidikan Fisika

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Abstrak Penelitian ini bertujuan untuk mengetahui pengaruh variasi waktupemanasan terhadap struktur kristal bahan semikonduktor Sn(S0,4Te0,6) dan untuk mengetahui morfologi permukaan serta komposisi kimia pada bahan semikonduktor Sn(S0,4Te0,6).Proses penumbuhan kristal pada penelitian ini menggunakan metode Bridgman yang dilakukan dengan memanaskan bahan Sn, S dan Te dengan perbandingan molaritasnya adalah 1 : 0,4 : 0,6 dan bekerja pada tekanan 5x10-5mbar. Pemanasan bahan semikonduktor Sn(S0,4Te0,6) dilakukan dengan menggunakan waktu awal sama untuk semua Sampel yakni selama 2 jam pada suhu 300°C dan pada suhu 600°C dilakukan variasi waktu, yakni Sampel 1 dipanaskan selama 4 jam, Sampel 2 selama 5 jam dan Sampel 3 selama 6 jam. Kristal hasil preparasi kemudian dikarakterisasi menggunakan X-Ray Diffraction(XRD), Scanning Electron Microscopy(SEM)dan Energy Dispersive Analysis of X-Ray(EDAX).Hasil karakterisasi XRD yang berupa difraktogrammenunjukkan bahwa kristal bahan semikonduktor Sn(S0,4Te0,6) yang terbentuk memiliki struktur kubik, dengan parameter kisi untuk alur pemanasan Sampel 1 adalah a = 6,269 Å, alur pemanasan Sampel 2 diperoleh parameter kisi a = 6,289 Å serta untuk alur pemanasan Sampel 3, nilai parameter kisi a = 6,269 Å. Berdasarkan hasil XRD, Sampel 3 menunjukkan intensitas yang paling tinggi. Hasil karakterisasi SEM, memperlihatkan bahwa kristal yang terbentuk merupakan polikristal dan hasil EDAX diperoleh perbandingan mol Sn, S dan Te adalah 1 : 0,2 : 0,7. Kata kunci: Kristal Sn(S0,4Te0,6), Hasil Preparasi, Struktur Kristal, Karakterisasi XRD, SEM dan EDAX. Abstract The purpose of this research is to understand the effect of heating time variation oncrystal structure of semiconductor material Sn(S0.4Te0.6) and to understand surface morphology and chemical composition of semiconductor material Sn(S0.4Te0.6). The crystal growing process in this research was done using Bridgman method withSn, S and Te materials with molarity ratio of1 : 0.4 : 0.6and active on 5x10-5mbarpressure. At the beginning all Samples were heated at 300°C for 2 hours. It was then incresed to 600°C for 4 hours (Samples 1), 5 hours (Samples 2) and 6 hours (Samples 3). Crystal preparation products were then characterized using X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and Energy Dispersive Analysis of X-Ray (EDAX).Characterization results of XRD showed that Sn(S0.4Te0.6) semiconductor crystal structure was cubic. The lattice parameters of the flow heating sample 1 was obtained at a = 6.269 Å, flow heating at sample 2a = 6.289 Åand for the flow heating at sample 3 a = 6.269 Å. Based on XRD results, Sample 3 showed the highest intensity. The SEM results showed that the formed crystal was polycrystalin. The mole ratio of Sn, S and Te observed by EDAX was 1 : 0.2 : 0.7. Keywords: Crystal Sn(S0.4Te0.6), Preparation Products, Crystal Structure, Characterization of XRD, SEM and EDAX.

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