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All Journal Jurnal Sains Dasar Jurnal Matematika & Sains Global Conference Index Jurnal Ilmu Fisika dan Terapannya (JIFTA)
Ariswan Ariswan
Jurusan Pendidikan Fisika, FMIPA, Universitas Negeri Yogyakarta
Astronomy Earth & Planetary Sciences Economics, Econometrics & Finance Education Electrical & Electronics Engineering Energy Engineering Law, Crime, Criminology & Criminal Justice Materials Science & Nanotechnology Mathematics Medicine & Pharmacology Physics

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Journal : Jurnal Sains Dasar

 1 
THE STRUCTURE AND CHEMICAL COMPOSITION OF SEMICONDUCTOR MATERIAL Sn(Se0,2S0.8) THIN FILM PREPARED USING EVAPORATION METHOD FOR SOLAR CELL APPLICATION Joko Utomo Utomo; Ariswan Ariswan
Jurnal Sains Dasar Vol 4, No 2 (2015): October 2015
Publisher : Faculty of Mathematics and Natural Science, Universitas Negeri Yogyakarta

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (147.37 KB) | DOI: 10.21831/jsd.v4i2.9102

Abstract

This research aims to grow a thin film Sn(Se0.2S0.8) by evaporation method. The researcher can understand the effect of spacer variations towards the crystal structure, lattice parameter, surface morphology, and chemical composition of Sn(Se0,2S0,8) thin film. The process of Sn(Se0.2S0.8) thin film preparation was done by using the evaporation method with pressure about 2 x 10-5 mbar. The process of Sn(Se0.2S0.8) thin film deposition was performed by giving some space between the substrate and the source i.e. 25 cm, 15 cm, and 10 cm. Characterization process was performed by using X-ray Diffraction (XRD) to determine the structure and parameter of thin film, Scanning Electron Microscopy  (SEM) to determine the thin film of surface morphology, and Energy Dispersive Analysis X-Ray (EDAX)  to determine the chemical composition of the thin film. The result of XRD characterization show that the Sn(Se0.2S0.8) thin film was  polycrystalline and it has an orthorombic crystal structure, with the lattice parameter  were sample 1 (spacer 25 cm): a = 4.306 Å, b = 11.30 Å, c = 4.139 Å; sample 2 (spacer 15 cm): a = 4.286 Å, b = 11.18 Å, c = 4.123 Å; sample 3 (spacer 10 cm): a = 4.301 Å, b = 11.30 Å, c = 4.143 Å. The result of SEM characterization in the sample 2 of Sn(Se0.2S0.8) showed that the surface morphology of the sample consisted of homogeneous oval shaped grains, with the diameter size of crystal grains on the surface about 0.3 μm – 0.5 μm. The result of EDAX analysis showed that comparison of percentage of chemical composition thin film Sn(Se0.2S0.8) was 1 : 0.11 : 0.79. Keywords: evaporation method, semiconductor Sn(Se0.2S0.8), solar cell, material characteristics
Co-Authors abdul mafahir iim Anggraeni Kumala Dewi Anissa Dyah Auliasari Eka Wulandari Erda Harum Saputri Gusril Gusril HARI SUTRISNO Hilma Eka Masitoh Iin Astarinugrahini Joko Utomo Utomo Mahmudah Setianingrum Muri Yusuf Nur Hidayat Nuril Hidayati Retno Arianingrum Rusdinal Rusdinal Siti Khoirunisa' sutjitno tjipto Sya'amzuri Hidayat Vina Hentri Tunita Ningrum Wahyu Lestari Wida Afosma Zainal Arifin