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INDONESIA
Jurnal Matematika & Sains
Published by Institut Teknologi Bandung
ISSN : -     EISSN : -     DOI : -
Core Subject : Education,
Mathematics
Arjuna Subject : -
Articles 6 Documents
 1 
Search results for , issue " Vol 11, No 2 (2006)" : 6 Documents clear
The Probability of Flare Occurrences Based on Sunspot Group and Magnetic Configurations Dhani Herdiwijaya; Sherly Imelda
Jurnal Matematika & Sains Vol 11, No 2 (2006)
Publisher : Institut Teknologi Bandung

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Abstract

We study the probability of flare occurrences observed in Hα and X-ray based on the classification and evolution of sunspot group and the magnetic structure within period 1994 to 2001. We found that there was a strong correlation between flare occurrences with the morphology and configuration of sunspot group and the magnetic structure. We also found that simple sunspot groups move more slowly before flare event, whereas complex groups move faster. On the other hand we did not find correlation between maximum area of sunspot group and the intensity of solar flare.
Pengaruh Pemberian Elisitor Homogenat Jamur Pythium aphanidermatum (Edson) Fitzp. terhadap Kandungan Ajmalisin dalam Kultur Akar Catharantus roseus (L) G. Don Mukarlina Mukarlina; Rizkita Rachmi Esyanti; Arbayah Hamonangan Siregar
Jurnal Matematika & Sains Vol 11, No 2 (2006)
Publisher : Institut Teknologi Bandung

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An experiment to study the effect of elicitor from Pythium aphanidermatum (Edson) Fitzp. on ajmalicine content of Catharanthus roseus (L) G. Don. root culture has been conducted. The C. roseus root culture in Zenk medium (1977) with the the addition of 10-7 M of napthalene acetic acid (NAA) and 10-7 M of benzylaminopurine (BAP) as growth factors was elicited with autoclaved P. aphanidermatum homogenate at concentrations of 0.05, 0.5, 1.0 and 50 mg DW/mL, then harvested at 18, 24, 36, 48, and 72 h after elicitation. The ajmalicine content was analyzed qualitatively and quantitatively by HPLC (High Pressure Liquid Chromatography) connected to chromatopack CR-7A plus. The result showed that ajmalicine content was influenced significantly by the concentration of elicitor and harvesting time. The highest ajmalicine content on the roots i.e. 165.6 ± 1.1 μg/g DW with the increment percentage of 181,6% was obtained by addition of 5.0 mg DW/mL of elicitor for 24 h, while on the media, the highest ajmalicine content i.e. 291.5 ± 0.9 mg DW/mL with the increment percentage of 306,5% was obtained by addition of 5.0 mg DW/mL elicitor for 36 hours. These results indicated that elicitation might be responsible for the higher ajmalicine content in the media compared to its accumulation in the root.
L2 Discretization of the Coulomb Three-body Problem in A Non-orthogonal Laguerre-function Basis Agus Kartono
Jurnal Matematika & Sains Vol 11, No 2 (2006)
Publisher : Institut Teknologi Bandung

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Abstract

In this paper a general analysis of the three-body Coulomb potential polynomials was presented. The three-body Coulomb wave functions expansion in a non-orthogonal Laguerre-type base function is shown to give two modified Pollaczek polynomials. The frozen-core model is used to examine the three-body Coulomb Hamiltonian. The resulting three-term recurrence relation is a special case of the Pollaczek polynomials which is a set of orthogonal polynomials having a nonempty continuous spectrum in addition to an infinite discrete spectrum. The completeness of the three-body Coulomb wave functions is further studied for different Laguerre basis size.
N-Type Conductivity in Wurtzite Mn-Doped GaN thin Films Grown by Plasma Assisted MOCVD Budi Mulyanti; Agus Subagio; Edi Supriyanto; Heri Sutanto; Fitri Suryani Arsyad; Pepen Arifin; Maman Budiman; Mohamad Barmawi
Jurnal Matematika & Sains Vol 11, No 2 (2006)
Publisher : Institut Teknologi Bandung

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Ferromagnetic semiconductor GaN:Mn thin films were successfully grown by plasma-assisted metalorganic chemical vapor deposition (PA-MOCVD) method on c-plane sapphire substrate. The films were grown at various Mn source flux in the range of 5 - 40 sccm and growth temperature which was lower than that of MOCVD themal, i.e. in the range of 625-700 °C. Cyclopentadienyl manganese tricarbonyl (CpMnT) was used as a source of Mn. X-ray diffraction patterns confirmed that GaN:Mn films are wurtzite and do not show second phase for film with Mn concentration up to 6.4% at 650 °C of growth temperature. Hall effect measurements show n-type characteristics. The carrier (electron) density tends to decreases and Hall mobility tends to with the increase of Mn concentration is increased. Hysteresis curves observed from VSM measurements indicated that all of the samples are ferromagnetic at room temperature.
Optimization of Deposition Parameters for high Quality a-SiGe:H Thin Films Mursal Mursal; Ida Usman; Toto Winata; Sukirno Sukirno; Mohamad Barmawi
Jurnal Matematika & Sains Vol 11, No 2 (2006)
Publisher : Institut Teknologi Bandung

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The effect of substrate temperature and rf power on the characteristics of a-SiGe:H alloys thin films has been investigated. The a-SiGe:H films made from a mixture of 10% silane (SiH4) and 10% germane (GeH4) gas diluted in hydrogen (H2) were grown on corning glass 7059 by using Plasma Enhanced Chemical Vapor Deposition (PECVD) method. The results showed that the deposition rate of a-SiGe:H films increased with the increasing of substrate temperature and rf power. The optical band gap (Eopt) of the films was improved by increasing of the rf power. The dependency of Eopt on the rf power is attributed to the change in Ge content in the films. The photosensitivity (σph/σd) of the films deposited at 200 °C and 175 °C slightly increased with increasing of rf power from 30-50 Watt. For the films deposited at 225 °C, the photosensitivity increased with increasing of rf power from 30-40 Watt, and relatively constant at rf power of 40-60 Watt.
Dinamika Paket Gelombang Elektron yang Menerobos Penghalang Trapesium dengan Ketebalan Nanometer Maharati Hamida; Khairurrijal Khairurrijal; Mikrajuddin Abdullah
Jurnal Matematika & Sains Vol 11, No 2 (2006)
Publisher : Institut Teknologi Bandung

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A simulation of the dynamics of electrone wave packet tunneling through a potential barrier in a MOS (metal-oxide-semiconductor) diode was performed by solving the time-dependent Schrödinger equation using the finite difference method. The wave packet is initially located in the semiconductor layer then moves toward to the oxide layer and probably tunnels through and/or is reflected by the oxide layer. The wave packet is deformed when it reaches the oxide layer. It is found that the higher the wave packet energy, the faster the wave packet moves and the higher the probability of transmitting the wave packet for the same bias voltage. It was also found that at low energy, the increase of bias voltage does not increase significantly the probability of finding the transmitted wave packet. At high energy, however, the probability of finding the transmitted wave packet becomes higher with increasing the bias voltage.

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