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All Journal BERKALA FISIKA JURNAL FISIKA Jurnal Matematika & Sains
Euis Sustini
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Mathematics Physics

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Studi Pengaruh Rasio V/III terhadap Morfologi Permukaan Film Tipis GaSb yang Lilik Hasanah; Euis Sustini; Sukirno Sukirno; Maman Budiman
Jurnal Matematika & Sains Vol 8, No 3 (2003)
Publisher : Institut Teknologi Bandung

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Abstract

Gallium Antimony (GaSb) thin film were grown on Semi Insulating (SI) GaAs (100) substrate by MOCVD (Metal-Organic Chemical Vapor Deposition) method. TMGa (trimethylgallium) and TDMASb (tridismethylaminoantimony) were used as precursors of group III and V, respectively, with H2 as gas carrier. The films were grown with V/III varied between 1,15 and 3,1. V/III ratio dependent of surface morphplogy and atomic composition of GaSb thin films were studied. The best surface morphology stoichiometric GaSb obtained at the V/II ratio of 2.0.
Studi Sifat Termal Prekursor In(TMHD)3 untuk Menumbuhkan Lapisan Tipis In2O3 dengan Teknik MOCVD Horasdia Saragih; Hasniah Aliah; Euis Sustini; Sukirno Sukirno
Jurnal Matematika & Sains Vol 14, No 4 (2009)
Publisher : Institut Teknologi Bandung

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The In2O3 thin films have been deposited on quartz substrate by MOCVD technique using In(TMHD)3 as a metal organic precurcor. Thermal properties of In(TMHD)3 have been investigated by analyses of TG-DTA curve and FTIR spectrum to determine the value of In2O3 deposition parameters. Based on TG-DTA curve and FTIR spectrum analyses, we find that: (1) melting point of In(TMHD)3 powder is 175 °C; (2) In(TMHD)3 powder starts to evaporate at 184 °C; (3) partial oxidation of In(TMHD)3 in Ar/atmosfer accur at 260 °C; and (4) dissosiation of TMHD ligand from indium metal element happened in the temperature range of 300 °C - 400 °C. Following these results, we maintaned growth condition for deposition of In2O3: the temperature of In(TMHD)3 bubbler (Tb) = 200 °C; the pressure of In(TMHD)3 bubbler (Pb) = 260 Torr; the rate of argon gas flow to carry out the vapor of In(TMHD)3 = 50 sccm; the rate of oxygen gas = 50 sccm; and temperature of substrate = 300 °C. In 120 minutes, the thickness of deposited In2O3 thin films, the rate of deposition and the roughness of film surface are about 0.2 µm, 1.6x10-3 µm/menit and 70 nm, respectively.
Sifat Optik Lapisan Tipis In2O3 yang Ditumbuhkan dengan Metode MOCVD Horasdia Saragih; Hasniah Aliah; Euis Sustini; Albert Manggading Hutapea
Jurnal Matematika & Sains Vol 15, No 2 (2010)
Publisher : Institut Teknologi Bandung

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The In2O3 thin films have been deposited on glass substrate by MOCVD method using In(TMHD)3 metal organic precursor. The growth parameters, such as bubbler temperature 200oC, bubbler pressure 260 Torr, substrate temperature 300oC, flow rate of Ar gas 50 sccm, flow rate of O2 gas 50 sccm, chamber pressure 2x10-3 Torr, and duration of growth from 120 to 180 minutes were used. Three In2O3 thin films with different thicknesses, i.e. 531, 434, and 404 nm were resulted. Optical transmissions of the thin films in the visible wavelength were above of 80%, and not significantly influenced by thickness difference up to about of 127 nm. The optical band gap and Urbach energy band of thin films were 3,76-3,80 eV and 0,20-0,22, respectively. The thin films deposited have indirect forbidden transition.
Fabrikasi Transparant Conducting Film Berbahan Dasar Grafit pada Substrat Plastik dengan Proses Mekanik Rahman, Dui Yanto; Sustini, Euis; Abdullah, Mikrajuddin
Jurnal Matematika dan Sains Vol 22 No 1 (2017)
Publisher : Institut Teknologi Bandung

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Transparent Conducting Film (TCF) employing graphite powder as conducting material has been successfully fabricated by using extremely cheap and simple method.  This method doesn’t use heating and transfer process which is commonly used in fabrication of Transparent Conducting Film. Graphite powder was directly deposited on the surface of plastic using circle motion of tube shaped-metal which its surface was covered with thick tissue. The film thickness was varied to investigate the influence of it to the transmittance and resistance of the film. The transmittance and resistance measurement was carried out under UV-Vis electrometer and I-V El-Kahfi equipment assistance, and finally the transmittance of 60% and resistance of 24,4 kΩ was gained for one time of coating, While 9 times of coating produced 13% of transmittance and 773 Ω of resistance.
Studi Sifat Termal Prekursor In(TMHD)3 Untuk Menumbuhkan Lapisan Tipis In2O3 dengan Teknik MOCVD Saragih, Horasdia; Hasniah, Hasniah; Sustini, Euis; Sukirno, Sukirno
BERKALA FISIKA Vol 13, No 1 (2010): Berkala Fisika
Publisher : BERKALA FISIKA

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Abstract

The In2O3 thin films have been deposited on quartz substrate by MOCVD technique using In(TMHD)3 as a metal organic precurcor. Thermal properties of In(TMHD)3 material have been investigated by analyses of TG-DTA curve and FTIR spectrum to determine the value of In2O3 deposition parameters. Based on TG-DTA curve and FTIR spectrum analyses, we find that: (1) melting point of In(TMHD)3 powder is 175oC; (2) In(TMHD)3 powder starts to evaporate at 184oC; (3) partial oxidation of In(TMHD)3 in Ar/atmosfer accur at 260oC; and (4) dissosiation of TMHD ligand from indium metal element happened in the temperature range 300oC – 400oC. According to these results, we maintaned growth condition for deposition of In2O3: the temperature of In(TMHD)3 bubbler (Tb) = 200oC; the pressure of In(TMHD)3 bubbler (Pb) = 260 Torr; the rate of argon gas flow to carried out the vapor of In(TMHD)3 = 50 sccm; the rate of oxygen gas = 50 sccm; and temperature of substrate = 300oC. In 120 minutes, the thickness of deposited In2O3 thin films, the rate of deposition, and the roughness of film surface are about 0.2 µm, 1.6x10-3 µm/menit and 70 nm, respectively.   Keywords: In(TMHD)3 precursor, In­2O3, thin films, thermal properties, MOCVD.
Kajian Struktur Serat dan Porositas Masker Udara Handika Dany Rahmayanti; Rahmawati Rahmawati; Euis Sustini; Mikrajuddin Abdullah
Jurnal Fisika Vol 8, No 1 (2018)
Publisher : Universitas Negeri Semarang

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.15294/jf.v8i1.13966

Abstract

There are 6 brands of air masks on the market that are Evo med, Nexcare carbon, Nexcare daily, Indomaret, Borma and Evo club. All masks on the market have 3 layers. Based on the results of microscopy testing showed that the fiber diameter image of all mask brands in layer 2 is smaller than layer 1 and 3. Generally, all brands of masks show a uniform fiber size distribution. From the surface porosity measurements, Borma masks have a larger porosity than other masks in layers 1, 2 and 3 ie 60.64%, respectively; 42.95% and 63.58%. The results show that the difference in mask price in the market does not show the quality standards of different mask filters. Furthermore, the results of this study may contribute to the development of research on masks.
Karakterisasi Sifat Mekanik Benang Wol dan Benang Kasur Handika Dany Rahmayanti; Rahmawati Munir; Euis Sustini; Mikrajuddin Abdullah
Jurnal Fisika Vol 9, No 1 (2019)
Publisher : Universitas Negeri Semarang

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.15294/jf.v9i1.19421

Abstract

Kajian mengenai karakteristik sifat mekanik benang merupakan hal yang sifatnya sederhana namun penting dilakukan demi berkembangnya penelitian mengenai serat dan benang. Pada penelitian ini digunakan dua jenis benang di pasaran yakni benang wol dan benang kasur. Karakterisasi meliputi kekuatan benang, elongasi, tenacity dan modulus Young. Berdasarkan hasil uji tarik didapatkan nilai kekuatan, elongasi dan tenacity dari benang. Nilai kekuatan benang wol berkisar 1269,09gram-1551,32gram. Dari kurva hasil uji tarik dapat diestimasi nilai modulus Young dari benang wol yang ada di pasaran yaitu 295 MPa-439 MPa. Sedangkan untuk hasil karakterisasi benang kasur di pasaran didapatkan bahwa benang mampu menahan beban maksimum 4794,12 gram-5895,45gram dan nilai modulus Young dari benang kasur didapatkan nilai 389,7MPa-495,29 MPa.
Co-Authors Albert Manggading Hutapea Hasniah Aliah Hasniah Hasniah Horasdia Saragih Lilik Hasanah Maman Budiman Mikrajuddin Abdullah Munir, Rahmawati Rahman, Dui Yanto Rahmawati Munir Rahmawati Rahmawati Rahmawati, Rahmawati Rahmayanti, Handika Dany Sukirno Sukirno Sukirno Sukirno