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Horasdia Saragih
Universitas Advent Indonesia
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Efek Magnetisasi Spontan dan Karakteristik Transport Listrik Film Tipis TiO2:Co yang ditumbuhkan dengan Metode MOCVD Horasdia Saragih; Pepen Arifin; Mohamad Barmawi
Jurnal Matematika & Sains Vol 10, No 1 (2005)
Publisher : Institut Teknologi Bandung

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TiO2:Co thin films were grown on Si(100) substrate by MOCVD method. The Co content in the film was varied in the range of 0.73% to 12.19%. The spontaneous magnetization effect and the electrical transport of films were measured by means of a Hall effect measurement. The Hall resistivity as a function of the magnetic field data show that the spontaneous magnetization effect occurs in films at the field lower than 1500 Oe. The Hall resistivity increases with the increase of Co concentration. The measurement of resistivity as function of temperature shows that the films have semiconductive properties. The minimum resistivity increases with increasing Co.
Anisotropi Magnetik Film Tipis TiO2:Co yang Ditumbuhkan dengan Teknik MOCVD Horasdia Saragih; Pepen Arifin; Mohamad Barmawi
Jurnal Matematika & Sains Vol 10, No 4 (2005)
Publisher : Institut Teknologi Bandung

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TiO2:Co thin films have been successfully deposited by using MOCVD technique. The titanium (IV) isopropoxide [Ti(OCH(CH3)2)4] 99,99%, tris (2,2,6,6-tetramethyl-3, 5-heptanedionato) cobalt (III) 99%, and oxygen gas (O2) were used as Ti, Co, and O precursors, respectively. Crystal structure, morphology and magnetic properties of thin films were investigated by X-ray diffractometer (XRD), scanning electron microscope (SEM), and vibrating sample magnetometer (VSM), respectively. The magnetic anisotropy (K) of thin films was very strong depended on the growth temperatures. The thin film grown at temperature of 400°C has anatase-213 structure and K value of 40000 Oe.emu/cm3. At the growth temperature of 450°C, the thin films were has still anatase-213 and K value of 95000 Oe.emu/cm3. At growth temperature of 500°C, the thin films have K value of 72000 Oe.emu/cm3. The crystal structure of films was changed with an additional plane of anatase-301. The thin film grown at temperature of 550°C has K value of 103600 Oe.emu/cm3. The structure of thin film was polycrystalline, mixed by anatase-213, rutile-220 and TiCoO3 (310) phase. All of films have thickness of about 0,7-0,9 µm.
Magnetoresistansi Divais Spintronika TiO2:Co/Si/TiO2:Co [Spintronics Magnetoresistance Device with TiO2:Co/Si/TiO2:Co] Edy Supriyanto; Agus Subagio; Hery Sutanto; Horasdia Saragih; Maman Budiman; Pepen Arifin; Sukirno Sukirno; Mohamad Barmawi
Jurnal Matematika & Sains Vol 12, No 1 (2007)
Publisher : Institut Teknologi Bandung

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TiO2:Co thin films were grown on Si substrates by Metalorganic Chemical Vapor Deposition (MOCVD) technique using titanium(IV)isopropoxide and tris(2,2,6,6-tetramethyl-3,5-heptanedionato)cobalt (III), and oxygen gas. The films grown at temperature of 450 oC were crystalline having a rutile structure with (002) orientation. Based on Energy Dispersive Spectroscope (EDS) analysis, Co content in TiO2 was 1.83% and films exhibit ferromagnetic properties at room temperature. Hysteresis curves obtained from Vibrating Sample Magnetometer (VSM) measurement have coercive and saturation magnetic fields of 130 Oe and 2.1 emu/cm3, respectively. Application of TiO2:Co as injection material in spintronic device with TiO2:Co/Si/TiO2:Co structure was investigated. The effect of polarized spin injection (magnetoresistance phenomenon) was observed from the current-voltage characteristics of the device.
Penumbuhan Film Tipis Ti1-xCoxO2 Dengan Metode MOCVD Horasdia Saragih; Mersi Kurniati; Akhiruddin Maddu; Pepen Arifin; Moehamad Barmawi
Jurnal Matematika & Sains Vol 9, No 3 (2004)
Publisher : Institut Teknologi Bandung

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The Ti1-xCoxO2 thin films have been successfully deposited on Silicon (Si) substrates by metalorganic chemical vapor deposition (MOCVD). The Ti1-xCoxO2 thin films with x = 0 is grown at deposition temperature of 450oC with argon and oxygen flow rate of 100 sccm and 60 sccm, respectively. The deposited film has a single orientation of (213)-anatase. The films consist of nanometer size of columnar grains. The growth rate was increased with increasing Co content and therefore the grains become larger. Generally, the crystal structure of films was affected by Co atom concentrations, however at temperature deposition of 450oC and argon flow rate of 70 sccm, the film has the initial structure of (213)-anatase and co-exist with (301)-anatase which is not dominant. The film thickness is about of 0,9 μm for an area of 3x3 cm2.
Pengaruh Temperatur Penumbuhan Terhadap Karakteristik Magnetik Film Tipis TiO2:Co yang ditumbuhkan dengan Metode Metalorganic Chemical Vapor Deposition (MOCVD) Horasdia Saragih; Pepen Arifin; Moehamad Barmawi; Mersi Kurniati
Jurnal Matematika & Sains Vol 9, No 4 (2004)
Publisher : Institut Teknologi Bandung

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TiO2:Co thin films have been grown on p-type Si(100) substrates by MOCVD method. The films were grown at substrate temperature of 450 oC to 500 oC , and the temperature of precursor bubbler was kept constant at 50 oC with vapor pressure of 260 Torr. Flow rate of O2 and Ar are 60 sccm and 100 sccm, respectively. The crystal structure, grain shape and magnetic properties of the films depend significantly on the substrate temperature. The anatase-213 structure with columnar grain was formed for the films grown at temperatures of 400 oC and 450 oC. The arrangement of atoms at grain boundary is improved at growth temperature of 450 oC. Anatase-301 structure with cone grain shape as additional component appears at growth temperature of 500 oC. The TiCoO3 phase with 310 plane was found at growth temperature of 550 oC. The grains grow at direction of -45o from normal substrate. Films that grown at 450 oCand 500 oC exhibit soft magnetic properties with Hc of 100 Oe and 80 Oe; and Mr of 250 emu/cm3 and 220 emu/cm3, respectively. The hard magnetic properties of the films are shown for the films grown at 550 oC. The films were grown for 2 hours producing the films with thickness of about 0.7 to 0.9 μm.
Studi Sifat Termal Prekursor In(TMHD)3 untuk Menumbuhkan Lapisan Tipis In2O3 dengan Teknik MOCVD Horasdia Saragih; Hasniah Aliah; Euis Sustini; Sukirno Sukirno
Jurnal Matematika & Sains Vol 14, No 4 (2009)
Publisher : Institut Teknologi Bandung

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The In2O3 thin films have been deposited on quartz substrate by MOCVD technique using In(TMHD)3 as a metal organic precurcor. Thermal properties of In(TMHD)3 have been investigated by analyses of TG-DTA curve and FTIR spectrum to determine the value of In2O3 deposition parameters. Based on TG-DTA curve and FTIR spectrum analyses, we find that: (1) melting point of In(TMHD)3 powder is 175 °C; (2) In(TMHD)3 powder starts to evaporate at 184 °C; (3) partial oxidation of In(TMHD)3 in Ar/atmosfer accur at 260 °C; and (4) dissosiation of TMHD ligand from indium metal element happened in the temperature range of 300 °C - 400 °C. Following these results, we maintaned growth condition for deposition of In2O3: the temperature of In(TMHD)3 bubbler (Tb) = 200 °C; the pressure of In(TMHD)3 bubbler (Pb) = 260 Torr; the rate of argon gas flow to carry out the vapor of In(TMHD)3 = 50 sccm; the rate of oxygen gas = 50 sccm; and temperature of substrate = 300 °C. In 120 minutes, the thickness of deposited In2O3 thin films, the rate of deposition and the roughness of film surface are about 0.2 µm, 1.6x10-3 µm/menit and 70 nm, respectively.
Sifat Optik Lapisan Tipis In2O3 yang Ditumbuhkan dengan Metode MOCVD Horasdia Saragih; Hasniah Aliah; Euis Sustini; Albert Manggading Hutapea
Jurnal Matematika & Sains Vol 15, No 2 (2010)
Publisher : Institut Teknologi Bandung

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The In2O3 thin films have been deposited on glass substrate by MOCVD method using In(TMHD)3 metal organic precursor. The growth parameters, such as bubbler temperature 200oC, bubbler pressure 260 Torr, substrate temperature 300oC, flow rate of Ar gas 50 sccm, flow rate of O2 gas 50 sccm, chamber pressure 2x10-3 Torr, and duration of growth from 120 to 180 minutes were used. Three In2O3 thin films with different thicknesses, i.e. 531, 434, and 404 nm were resulted. Optical transmissions of the thin films in the visible wavelength were above of 80%, and not significantly influenced by thickness difference up to about of 127 nm. The optical band gap and Urbach energy band of thin films were 3,76-3,80 eV and 0,20-0,22, respectively. The thin films deposited have indirect forbidden transition.
Pengaruh Kelelahan Polarisasi pada Sifat Dielektrik dari Film Polimer Feroelektrik Limbong, Albinur; Saragih, Horasdia
Jurnal Matematika dan Sains Vol 18 No 2 (2013)
Publisher : Institut Teknologi Bandung

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Polimer, seperti polyvinylidene fluoride (PVDF) dan kopolimernya dengan trifluoroethylene (TrFE) adalah material dielektrik dan feroelektrik. Material ini menunjukkan loop histeresis jika dikenakan medan listrik yang disiklus. Agar bersifat  piroelektrik, material ini harus mengalami poling. Perlakuan poling atau fatiguing pada material ini akan mempengaruhi tidak saja sifat feroelektriknya, tetapi juga sifat dielektriknya, baik pada film yang tebal maupun yang tipis (kurang dari 1 mm). Sifat dielektrik yang diukur adalah permitivitas dielektrik dan dielectric loss sebagai fungsi dari frekuensi pada beberapa suhu yang berbeda. Dari hasil pengukuran didapat bahwa poling atau fatiguing meningkatkan kekristalan dan memperbesar ukuran kristal. Tetapi, pengaruh fatigue (kelelahan) pada sifat dielektrik material ini hanya teramati pada frekuensi rendah. Kata kunci: Kelelahan Polarisasi, PVDF, TrFE, Sifat Dielektrik, Polimer Feroelektrik. The Effect of Polarization Fatigue on the Dielectric Properties of Ferroelectric Polymer Films Abstract Polymers, such as Polyvinylidene Fluoride (PVDF) and its copolymers with Trifuoroethylene (TrFE), are both dielectric and ferroelectric materialals. They exhibit polarization hysteresis loop when subjected to cycled electric field. To be pyroelectric, these materialals have to be poled. Poling or fatiguing these materialals influence not only the ferroelectric properties, but also the dielectric properties. This paper reports the Effects of Fatigue on dielectric Properties of PVDF and P(VDF/TrFE) both thick and sub-micron films. The dielectric properties were characterized by the measurement of the dielectric permittivities and loss as function of frequency at several temperatures. Based on the experimental results, it is found that poling the polymers substantially increases the crystallinity and the size of crystallites. However, the effect of fatigue on the dielectric properties is only evident at low frequencies. Keywords: Polarization Fatigue, PVDF, TrFE, Dielectric Properties, Ferroelectric Polymer.
Penggunaan Ruang Reaksi Berbentuk Tabung Berdiameter 500 µm untuk Menumbuhkan Nanopartikel ZnO Berdispersi Tunggal Saragih, Horasdia; Ricky, Donn Richard; Limbong, Albinur
Jurnal Matematika dan Sains Vol 18 No 2 (2013)
Publisher : Institut Teknologi Bandung

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Nanopartikel ZnO berdispersi tunggal memiliki bidang terapan yang sangat luas karena sangat attraktif serta memiliki efisiensi kerja yang sangat tinggi. Oleh karena itu investigasi terhadap teknik-teknik penumbuhannya terus dilakukan dan mendapat banyak perhatian. Teknik penumbuhan yang efesien dan sederhana, terus dicari. Pada penelitian ini nanopartikel ZnO berdispersi tunggal telah ditumbuhkan dengan menggunakan ruang reaksi berbentuk tabung berjari-jari 500 µm. Sifat sirkulatif bahan cair yang mengalir di dalam tabung dimanfaatkan untuk mendapatkan hasil campuran dan hasil reaksi prekursor yang homogen. Dengan memanfaatkan pola alir prekursor yang sirkulatif serta ukuran volumenya yang sangat kecil di dalam tabung, menghasilkan waktu pencampuran yang sangat singkat dan distribusi ukuran nanopartikel ZnO yang relatif homogen (berdispersi tunggal). Dengan cepatnya proses pencampuran dan dengan homogennya ukuran nanopartikel ZnO yang dihasilkan, membuat teknik penumbuhan ini menjadi sangat efesien dan sederhana. Serbuk ZnCl2, serbuk NaOH dan di-water (H2O) digunakan sebagai prekursor, dan etanol digunakan sebagai pelarut. Polimer polyvinylpyrrolidone (PVP) digunakan sebagai separator untuk memperkecil ukuran rata-rata nanopartikel ZnO dan untuk mempersempit distribusi ukurannya. Kata kunci: Ruang reaksi berbentuk tabung, Nanopartikel ZnO, Dispersi tunggal, Polyvinylpyrrolidone (PVP).   The Use of Tube Reactor with Diameter of 500 µm for Growing ZnO Monodisperse Nanoparticles Abstract ZnO monodisperse nanoparticles have various field applications. This material was very attractive and has high performance. Today, the growth technique of this material with high efecience and simple is intensively investigated and attack much attention. In this work, ZnO monodisperse nanoparticles have been grown with use a reactor in the tube form with diameter of 500 µm. In the tube, precursors were flow circulatively and have very small volume. Due to the flow circulatively and very small volume of precursors in the tube, the homogen mixture of precursors, homogen reactions, and finally, monodisperse of ZnO nanoparticles were obtained in short time. With this reactor, growth of ZnO monodisperse nanoparticles could be carried out simply and efficiently. ZnCl2, NaOH and H2O were used as precursors, and athanol was used as solvent. Polymer polyvinylpyrrolidone (PVP) was used as separator to obtain different average size and different distribution size of ZnO monodisperse nanoparticels.  Keywords: Tube Reactor, ZnO nanoparticles, Monodisperse, Polyvinylpyrrolidone (PVP).
Studi Sifat Termal Prekursor In(TMHD)3 Untuk Menumbuhkan Lapisan Tipis In2O3 dengan Teknik MOCVD Saragih, Horasdia; Hasniah, Hasniah; Sustini, Euis; Sukirno, Sukirno
BERKALA FISIKA Vol 13, No 1 (2010): Berkala Fisika
Publisher : BERKALA FISIKA

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Abstract

The In2O3 thin films have been deposited on quartz substrate by MOCVD technique using In(TMHD)3 as a metal organic precurcor. Thermal properties of In(TMHD)3 material have been investigated by analyses of TG-DTA curve and FTIR spectrum to determine the value of In2O3 deposition parameters. Based on TG-DTA curve and FTIR spectrum analyses, we find that: (1) melting point of In(TMHD)3 powder is 175oC; (2) In(TMHD)3 powder starts to evaporate at 184oC; (3) partial oxidation of In(TMHD)3 in Ar/atmosfer accur at 260oC; and (4) dissosiation of TMHD ligand from indium metal element happened in the temperature range 300oC – 400oC. According to these results, we maintaned growth condition for deposition of In2O3: the temperature of In(TMHD)3 bubbler (Tb) = 200oC; the pressure of In(TMHD)3 bubbler (Pb) = 260 Torr; the rate of argon gas flow to carried out the vapor of In(TMHD)3 = 50 sccm; the rate of oxygen gas = 50 sccm; and temperature of substrate = 300oC. In 120 minutes, the thickness of deposited In2O3 thin films, the rate of deposition, and the roughness of film surface are about 0.2 µm, 1.6x10-3 µm/menit and 70 nm, respectively.   Keywords: In(TMHD)3 precursor, In­2O3, thin films, thermal properties, MOCVD.
Co-Authors Agus Subagio Agus Subagio Akhiruddin Maddu Albert Manggading Hutapea Albinur Limbong, Albinur Andesmeta Tarigan Donn Richard Ricky Edy Supriyanto Edy Supriyanto Euis Sustini Hasniah Aliah Hasniah Hasniah Hery Sutanto Maman Budiman Maman Budiman Marissa Rijoice Mersi Kurniati Moehamad Barmawi Moehammad Barmawi Mohamad Barmawi Mohamad Barmawi Mohamad Barmawi Mohamad Barmawi Mohamad Barmawi Mohammad Barmawi Mujamilah Mujamilah Mujamilah Mujamilah Mujamilah Mujamilah Pearlyta Chrisophras Situmorang Pepen Arifin Pepen Arifin Pepen Arifin Pepen Arifin Pepen Arifin Pepen Arifin Pepen Arifin Ridwan Ridwan Ridwan Ridwan Sukirno Sukirno Sukirno Sukirno Sukirno Sukirno