cover
Article Per Year (5 Year)
All
Home Page
OAI Link
Editorial Team
Contact
Reviewer
Google Scholar
Contact Name
-
Contact Email
-
Phone
-
Journal Mail Official
-
Editorial Address
-
Location
Kota semarang,
Jawa tengah
INDONESIA
BERKALA FISIKA
Published by Universitas Diponegoro
ISSN : -     EISSN : -     DOI : -
Core Subject : Science,
Physics
BERKALA FISIKA adalah jurnal saintifik yang diterbitkan secara periodik 3 bulanan. Jurnal ini memuat kajian-kajian Fisika baik kajian teoretik maupun hasil eksperimen. Jurnal ini juga memberi ruang yang luas bagi kajian – kajian aplikasi fisika dalam bidang teknologi, ilmu-ilmu hayati dan kedokteran.
Arjuna Subject : -
Articles 6 Documents
 1 
Search results for , issue "Vol 13, No 1 (2010): Berkala Fisika" : 6 Documents clear
Studi Sifat Termal Prekursor In(TMHD)3 Untuk Menumbuhkan Lapisan Tipis In2O3 dengan Teknik MOCVD Saragih, Horasdia; Hasniah, Hasniah; Sustini, Euis; Sukirno, Sukirno
BERKALA FISIKA Vol 13, No 1 (2010): Berkala Fisika
Publisher : BERKALA FISIKA

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (406.367 KB)

Abstract

The In2O3 thin films have been deposited on quartz substrate by MOCVD technique using In(TMHD)3 as a metal organic precurcor. Thermal properties of In(TMHD)3 material have been investigated by analyses of TG-DTA curve and FTIR spectrum to determine the value of In2O3 deposition parameters. Based on TG-DTA curve and FTIR spectrum analyses, we find that: (1) melting point of In(TMHD)3 powder is 175oC; (2) In(TMHD)3 powder starts to evaporate at 184oC; (3) partial oxidation of In(TMHD)3 in Ar/atmosfer accur at 260oC; and (4) dissosiation of TMHD ligand from indium metal element happened in the temperature range 300oC – 400oC. According to these results, we maintaned growth condition for deposition of In2O3: the temperature of In(TMHD)3 bubbler (Tb) = 200oC; the pressure of In(TMHD)3 bubbler (Pb) = 260 Torr; the rate of argon gas flow to carried out the vapor of In(TMHD)3 = 50 sccm; the rate of oxygen gas = 50 sccm; and temperature of substrate = 300oC. In 120 minutes, the thickness of deposited In2O3 thin films, the rate of deposition, and the roughness of film surface are about 0.2 µm, 1.6x10-3 µm/menit and 70 nm, respectively.   Keywords: In(TMHD)3 precursor, In­2O3, thin films, thermal properties, MOCVD.
Analisis Velocity Model Building Pada Pre Stack Depth Migration Untuk Penggambaran Struktur Bawah Permukaan Daerah ”x” Triarto, Yose Rizal; Danusaputro, Hernowo; Harmoko, Udi
BERKALA FISIKA Vol 13, No 1 (2010): Berkala Fisika
Publisher : BERKALA FISIKA

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (836.504 KB)

Abstract

Pre Stack Depth Migration method has been carried out for 2D seismic reflection data on Line KPH-11807 at “X” area. This method was chosen for reconstruction geology features and imaging the subsurface structure. Based on previous investigation which done October, 2004-January, 2005, Line KPH-11807 at “X” area was a potential development as hydrocarbon prospect area which complex geology structure and strong lateral velocity variations. In the same area has been done previously with Pre Stack Time Migration by Elnusa Geosains, PT. Therefore the result of the PSDM can be compared to PSTM method. Seismic section with complex geology structure and/or strong lateral velocity variations area, which often there are at seismic data migrated stack can be overcome using an accurate velocity model. Velocity model building with the IVMB (interval velocity model building) concept consist of the coherency inversion and global tomography yield the right subsurface geological model. Hereinafter the velocity model will be used for the PSDM (pre stack depth migration) process. Result of PSDM shows a significant image enhancement, able to assure the reflection pattern at the horizons with strong lateral velocity variations and give the more coherence resolution compared with Pre Stack Time Migration seismic data. This study is very valuable in building exploration concept and development of the area, especially in a complex structure with strong lateral velocity variations.   Keywords: PSDM, velocity model building.
Mekanisme Hamburan Defek Statis Dan Vibrasi Termal Terhadap Mobilitas Elektron Pada Film Tipis GaN Rusdiana, Dadi; Hasanah, Lilik; Suhendi, Endi
BERKALA FISIKA Vol 13, No 1 (2010): Berkala Fisika
Publisher : BERKALA FISIKA

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (424.637 KB)

Abstract

Electrons Mobility in GaN thin films has been determined for temperature variation using approach method to the relaxation time due to the influence of static defect scattering and thermal vibrations. The simulation results show that electron mobility is strongly influenced by environmental temperature, except for the scattering of neutral impuritas type that does not affect the value of the charge carrier mobility even though the external temperature was varied.   Keywords: Electrons Mobility, defect static, thermal vibration
Evaluasi Kinerja Metoda Analisis Pengukuran Neutron (APN) Arifin, Zaenal; Sasongko, Dwi P; Munir, M
BERKALA FISIKA Vol 13, No 1 (2010): Berkala Fisika
Publisher : BERKALA FISIKA

Show Abstract | Download Original | Original Source | Check in Google Scholar

Abstract

Evaluation of Neutron Activation Analysis (NAA) methods performance has been done. The objective is to validate the data form these analysis on the determination of the trace element concentration in the waters and sediments. This evaluation covering test of devices stability, background counting, Figure of Merit (FOM), Critical Level (Lc), Detection Limit (LD), Determination Limit (LQ) and test of quality result. Result show that device in stabil condition  have background counting about 0.0037 to 0.1806 cps, Figure of Merit (FOM) about to 0.0045 to 0.1732 secon. The data result analysis above Critical Level (LC), in LC about 0.07 to 16.42 ppb. Detection Limit (LD) about 0.14 to 32.93 ppb in significant 95% expect Hg obtained LD 1.26 ppb. Determination Limit (LQ) about 0.44 to 100.10 ppb. Test of quality result show that of standardized difference about 15.17% to above 50% and Precision result analysis about 0.01% to 99.00%.   Keywords : NAA Methods, Trace element, devices stability, background counting, Figure of Merit (FOM), Critical Level (Lc), Detection Limit (LD), Determination Limit (LQ) and test of quality result.
Studi Konduktivitas Listrik Film Tipis Ba0.25Sr0.75TiO3 Yang Didadah Ferium Oksida (BFST) Menggunakan Metode Chemical Solution Deposition Irzaman, Irzaman; Erviansyah, R; Syafutra, H; Maddu, A; Siswadi, Siswadi
BERKALA FISIKA Vol 13, No 1 (2010): Berkala Fisika
Publisher : BERKALA FISIKA

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (271.851 KB)

Abstract

Has done growth Ba0,25Sr0, 75TiO3 (BST) thin film and BST are pure Ferium Oxide Fe2O3 dopant (BFST) with dopant variations 5%, 10% and 15% above the substrate Si (100) type-p using Chemical Solution Deposition Method (CSD) with the spin coating technique at a speed of around 3000 rpm for 30 seconds. BST thin films made with 1 M concentration and annealing at a temperature of 850°C for Si Substrate. Thin film on silicon substrate type-p thickness characterization performed using the volumetric method and the characterization of electrical conductivity by using LCR meter. From the characterization results showed the thickness increases with the addition of ferium oxide dopant given. Electrical conductivity value of BST and BFST thin films are in the range semiconductor materials and electrical conductivity values obtained increased when the higher intensity light is used whereas resistance value could decrease if the light intensity is increased. The addition of ferium oxide dopant will increases electrical conductivity value of BST and BFST thin films.   Keywords : BFST, thin film, CSD, spin coating, electrical conductivity
Solusi Numerik Model Dinamik Perlakuan Immunotherapy pada Infeksi HIV-1 Kartono, Agus; Rosidah, Rosidah; Arif, Ardian
BERKALA FISIKA Vol 13, No 1 (2010): Berkala Fisika
Publisher : BERKALA FISIKA

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (590.537 KB)

Abstract

There are several types of treatment options that can slow the progression of HIV that can be offered if the number of CD4 + cells has been known for certain, one treatment is by immunotherapy with interleukin-2 (IL-2). This type of treatment is to increase the immune system that can help the body fight against the infection itself. Efforts to raise an immune response would be appropriate to reduce the amount of virus. This brings new hope for treatment of HIV infection and the type of treatment is being researched. Interleukin-2 (IL-2) is most of the cytokines which are proteins made by the body. T-helper cells, a type of white blood cells, produce IL-2 when they were stimulated by infection. In this study, a model of HIV disease progression than individuals not treated can be expressed in a mathematical model, and also expressed immunotherapy model to see the dynamics of viral populations and the population of CD4 + T cells from HIV disease based on ordinary differential equation (ODE). This study aims to calculate the numerical solution immunotherapy mathematical model in HIV infection and a mathematical model to predict the outcome of immunotherapy treatment strategies in HIV infection. Keywords: HIV, CD4 + T cells, immunotherapy, mathematical modeling

Page 1 of 1 | Total Record : 6

 1 

Filter by Year

2010 2010


Reset
Filter By Issues
All Issue Vol 26, No 1 (2023): Berkala Fisika Vol 25, No 4 (2022): Berkala Fisika Vol 25, No 2 (2022): Berkala Fisika Vol 24, No 4 (2021): Berkala Fisika Vol 24, No 3 (2021): Berkala Fisika Vol 24, No 1 (2021): Berkala Fisika Vol 23, No 4 (2020): Berkala Fisika Vol 23, No 3 (2020): Berkala Fisika Vol 23, No 2 (2020): Berkala Fisika Vol 23, No 1 (2020): Berkala Fisika Vol 22, No 4 (2019): Berkala Fisika Vol. 22 No. 4 Tahun 2019 Vol 22, No 3 (2019): Berkala Fisika Vol. 22 No. 3 Tahun 2019 Vol 22, No 2 (2019): Berkala Fisika Vol. 22 No. 2 Tahun 2019 Vol 22, No 1 (2019): Berkala Fisika Vol. 22 No. 1 Tahun 2019 2015: Berkala Fisika Vol. 18 No. 4 Tahun 2015 2015: Berkala Fisika Vol. 18 No. 3 Tahun 2015 2015: Berkala Fisika Vol. 18 No. 2 Tahun 2015 2015: Berkala Fisika Vol. 18 No. 1 Tahun 2015 2014: Berkala Fisika Vol. 17 No. 4 Tahun 2014 2014: Berkala Fisika Vol. 17 No. 3 Tahun 2014 2014: Berkala Fisika Vol. 17 No. 2 Tahun 2014 2014: Berkala Fisika Vol. 17 No. 1 Tahun 2014 Vol 16, No 4 (2013): Berkala Fisika Vol 16, No 3 (2013): Berkala Fisika Vol 16, No 2 (2013): Berkala Fisika Vol 16, No 1 (2013): Berkala Fisika Vol 15, No 4 (2012): Berkala Fisika Vol 15, No 3 (2012): Berkala Fisika Vol 15, No 2 (2012): Berkala Fisika Vol 15, No 1 (2012): Berkala Fisika Vol 11, No 2 (2008): Berkala Fisika Vol 14, No 4 (2011): Berkala Fisika Vol 14, No 3 (2011): Berkala Fisika Vol 14, No 2 (2011): Berkala Fisika Vol 14, No 1 (2011): Berkala Fisika Vol 13, No 4 (2010): Berkala Fisika Vol 13, No 3 (2010): Berkala Fisika Vol 13, No 2 (2010): Berkala Fisika Vol 13, No 2 (2010): Berkala Fisika, Edisi Khusus Vol 13, No 1 (2010): Berkala Fisika Vol 12, No 4 (2009): Berkala Fisika Vol 12, No 3 (2009): Berkala Fisika Vol 12, No 2 (2009): Berkala Fisika Vol 12, No 1 (2009): Berkala Fisika Vol 11, No 4 (2008): Berkala Fisika Vol 11, No 3 (2008): Berkala Fisika Vol 11, No 1 (2008): Berkala Fisika Vol 10, No 4 (2007): Berkala Fisika Vol 10, No 3 (2007): Berkala Fisika Vol 10, No 2 (2007): Berkala Fisika Vol 10, No 1 (2007): Berkala Fisika Vol 9, No 4 (2006): Berkala Fisika Vol 9, No 3 (2006): Berkala Fisika Vol 9, No 2 (2006): Berkala Fisika Vol 9, No 1 (2006): Berkala Fisika More Issue